|   | 
Details
   web
Records
Author Andricek, L. et al; Lacasta, C.; Marinas, C.; Vos, M.
Title Intrinsic resolutions of DEPFET detector prototypes measured at beam tests Type Journal Article
Year 2011 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 638 Issue 1 Pages 24-32
Keywords (down) Silicon pixel detector; Detector resolution; Spatial resolution; DEPFET; Beam test
Abstract The paper is based on the data of the 2009 DEPFET beam test at CERN SPS. The beam test used beams of pions and electrons with energies between 40 and 120 GeV, and the sensors tested were prototypes with thickness of 450 μm and pixel pitch between 20 and 32 μm. Intrinsic resolutions of the detectors are calculated by disentangling the contributions of measurement errors and multiple scattering in tracking residuals. Properties of the intrinsic resolution estimates and factors that influence them are discussed. For the DEPFET detectors in the beam test, the calculation yields intrinsic resolutions of approximate to 1 μm, with a typical accuracy of 0.1 μm. Bias scan, angle scan, and energy scan are used as example studies to show that the intrinsic resolutions are a useful tool in studies of detector properties. With sufficiently precise telescopes, detailed resolution maps can be constructed and used to study and optimize detector performance.
Address [Dolezal, Z.; Drasal, Z.; Kodys, P.; Kvasnicka, P.; Malina, L.; Scheirich, J.] Charles Univ Prague, Fac Math & Phys, Inst Particle & Nucl Phys, CR-18000 Prague, Czech Republic, Email: peter.kodys@mff.cuni.cz
Corporate Author Thesis
Publisher Elsevier Science Bv Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes ISI:000290082600005 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 618
Permanent link to this record
 

 
Author Affolder, A. et al; Garcia, C.; Lacasta, C.; Marco, R.; Marti-Garcia, S.; Miñano, M.; Soldevila, U.
Title Silicon detectors for the sLHC Type Journal Article
Year 2011 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 658 Issue 1 Pages 11-16
Keywords (down) Silicon particle detectors; Radiation damage; Irradiation; Charge collection efficiency
Abstract In current particle physics experiments, silicon strip detectors are widely used as part of the inner tracking layers. A foreseeable large-scale application for such detectors consists of the luminosity upgrade of the Large Hadron Collider (LHC), the super-LHC or sLHC, where silicon detectors with extreme radiation hardness are required. The mission statement of the CERN RD50 Collaboration is the development of radiation-hard semiconductor devices for very high luminosity colliders. As a consequence, the aim of the R&D programme presented in this article is to develop silicon particle detectors able to operate at sLHC conditions. Research has progressed in different areas, such as defect characterisation, defect engineering and full detector systems. Recent results from these areas will be presented. This includes in particular an improved understanding of the macroscopic changes of the effective doping concentration based on identification of the individual microscopic defects, results from irradiation with a mix of different particle types as expected for the sLHC, and the observation of charge multiplication effects in heavily irradiated detectors at very high bias voltages.
Address [Barber, T.; Breindl, M.; Driewer, A.; Koehler, M.; Kuehn, S.; Parzefall, U.; Preiss, J.; Walz, M.; Wiik, L.] Univ Freiburg, Inst Phys, D-79104 Freiburg, Germany, Email: Ulrich.Parzefall@physik.uni-freiburg.de
Corporate Author Thesis
Publisher Elsevier Science Bv Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:000297783300004 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 836
Permanent link to this record
 

 
Author Kuehn, S. et al; Bernabeu, J.; Lacasta, C.; Marco-Hernandez, R.; Santoyo, D.; Solaz, C.; Soldevila, U.
Title Prototyping of hybrids and modules for the forward silicon strip tracking detector for the ATLAS Phase-II upgrade Type Journal Article
Year 2017 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 12 Issue Pages P05015 - 26pp
Keywords (down) Si microstrip and pad detectors; Particle tracking detectors (Solid-state detectors); Solid state detectors
Abstract For the High-Luminosity upgrade of the Large Hadron Collider an increased instantaneous luminosity of up to 7.5 . 10(34) cm(-2) s(-1), leading to a total integrated luminosity of up to 3000 fb(-1), is foreseen. The current silicon and transition radiation tracking detectors of the ATLAS experiment will be unable to cope with the increased track densities and radiation levels, and will need to be replaced. The new tracking detector will consist entirely of silicon pixel and strip detectors. In this paper, results on the development and tests of prototype components for the new silicon strip detector in the forward regions (end-caps) of the ATLAS detector are presented. Flex-printed readout boards with fast readout chips, referred to as hybrids, and silicon detector modules are investigated. The modules consist of a hybrid glued onto a silicon strip sensor. The channels on both are connected via wire-bonds for readout and powering. Measurements of important performance parameters and a comparison of two possible readout schemes are presented. In addition, the assembly procedure is described and recommendations for further prototyping are derived.
Address [Kuehn, S.] CERN, European Org Nucl Res, Expt Phys, Route Meyrin 385, CH-1211 Geneva 23, Switzerland, Email: susanne.kuehn@cern.ch
Corporate Author Thesis
Publisher Iop Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000405076000015 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 3221
Permanent link to this record
 

 
Author Poley, L. et al; Lacasta, C.
Title Investigations into the impact of locally modified sensor architectures on the detection efficiency of silicon micro-strip sensors Type Journal Article
Year 2017 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 12 Issue Pages P07006 - 17pp
Keywords (down) Si microstrip and pad detectors; Inspection with x-rays; Hybrid detectors; Instrumentation for particle accelerators and storage rings – high energy (linear accelerators, synchrotrons)
Abstract The High Luminosity Upgrade of the LHC will require the replacement of the Inner Detector of ATLAS with the Inner Tracker (ITk) in order to cope with higher radiation levels and higher track densities. Prototype silicon strip detector modules are currently developed and their performance is studied in both particle test beams and X-ray beams. In previous test beam measurements of prototype modules, the response of silicon sensors has been studied in detailed scans across individual sensor strips. These scans found instances of sensor strips collecting charge across areas on the sensor deviating from the geometrical width of a sensor strip. The variations have been linked to local features of the sensor architecture. This paper presents results of detailed sensor measurements in both X-ray and particle beams investigating the impact of sensor features (metal pads and p-stops) on the sensor strip response.
Address [Poley, L.] DESY, Notkestr, Hamburg, Germany, Email: Anne-Luise.Poley@desy.de
Corporate Author Thesis
Publisher Iop Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000406392600006 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 3234
Permanent link to this record
 

 
Author Poley, L.; Blue, A.; Bloch, I.; Buttar, C.; Fadeyev, V.; Fernandez-Tejero, J.; Fleta, C.; Hacker, J.; Lacasta, C.; Miñano, M.; Renzmann, M.; Rossi, E.; Sawyer, C.; Sperlich, D.; Stegler, M.; Ullan, M.; Unno, Y.
Title Mapping the depleted area of silicon diodes using a micro-focused X-ray beam Type Journal Article
Year 2019 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 14 Issue Pages P03024 - 14pp
Keywords (down) Si microstrip and pad detectors; Detector design and construction technologies and materials; Particle tracking detectors (Solid-state detectors); Radiation-hard detectors
Abstract For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker (ITk). The ITk will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of 500V to maintain a low noise and power dissipation. In order to minimise sensor leakage currents, particularly in the high-radiation environment inside the ATLAS detector, sensors are foreseen to be operated at low temperatures and to be manufactured from wafers with a high bulk resistivity of several k Omega.cm. Simulations showed the electric field inside sensors with high bulk resistivity to extend towards the sensor edge, which could lead to increased surface currents for narrow dicing edges. In order to map the electric field inside biased silicon sensors with high bulk resistivity, three diodes from ATLAS silicon strip sensor prototype wafers were studied with a monochromatic, micro-focused X-ray beam at the Diamond Light Source (Didcot, U.K.). For all devices under investigation, the electric field inside the diode was mapped and its dependence on the applied bias voltage was studied.
Address [Poley, L.] Lawrence Berkeley Natl Lab, Cyclotron Rd, Berkeley, CA 94720 USA, Email: Anne-Luise.Poley@desy.de
Corporate Author Thesis
Publisher Iop Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000463330900012 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 3973
Permanent link to this record