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Author ATLAS Collaboration (Aad, G. et al); Bernabeu Verdú, J.; Cabrera Urban, S.; Castillo Gimenez, V.; Costa, M.J.; Fassi, F.; Ferrer, A.; Fiorini, L.; Fuster, J.; Garcia, C.; Garcia-Argos, C.; Garcia Navarro, J.E.; Gonzalez de la Hoz, S.; Hernandez Jimenez, Y.; Higon-Rodriguez, E.; Irles Quiles, A.; Kaci, M.; King, M.; Lacasta, C.; Lacuesta, V.R.; March, L.; Marti-Garcia, S.; Miñano, M.; Mitsou, V.A.; Moles-Valls, R.; Oliver Garcia, E.; Pedraza Lopez, S.; Perez Garcia-Estañ, M.T.; Romero Adam, E.; Ros, E.; Salt, J.; Sanchez Martinez, V.; Soldevila, U.; Sanchez, J.; Torro Pastor, E.; Valero, A.; Valladolid Gallego, E.; Valls Ferrer, J.A.; Villaplana Perez, M.; Vos, M.
Title Operation and performance of the ATLAS semiconductor tracker Type Journal Article
Year 2014 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 9 Issue Pages P08009 - 73pp
Keywords (down) Solid state detectors; Charge transport and multiplication in solid media; Particle tracking detectors (Solid-state detectors); Detector modelling and simulations I (interaction of radiation with matter, interaction of photons with matter, interaction of hadrons with matter, etc)
Abstract The semiconductor tracker is a silicon microstrip detector forming part of the inner tracking system of the ATLAS experiment at the LHC. The operation and performance of the semiconductor tracker during the first years of LHC running are described. More than 99% of the detector modules were operational during this period, with an average intrinsic hit efficiency of (99.74 +/- 0.04)%. The evolution of the noise occupancy is discussed, and measurements of the Lorentz angle, delta-ray production and energy loss presented. The alignment of the detector is found to be stable at the few-micron level over long periods of time. Radiation damage measurements, which include the evolution of detector leakage currents, are found to be consistent with predictions and are used in the verification of radiation background simulations.
Address [Jackson, P.; Soni, N.; White, M. J.] Univ Adelaide, Dept Phys, Adelaide, SA, Australia
Corporate Author Thesis
Publisher Iop Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000341927600037 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 1945
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Author Unno, Y. et al; Garcia, C.; Jimenez, J.; Lacasta, C.; Marti-Garcia, S.; Soldevila, U.
Title Development of n(+) -in-p large-area silicon microstrip sensors for very high radiation environments-ATLAS12 design and initial results Type Journal Article
Year 2014 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 765 Issue Pages 80-90
Keywords (down) Silicon strip; n(+)-in-p; P-type; Radiation-tolerant; HL-LHC; PTP
Abstract We have been developing a novel radiation tolerant n(+)-in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float zone wafers, where large area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 pm and slim edge space of 450 pm, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers.
Address [Edwards, S. O.; Pyatt, S.; Thomas, J. P.; Wilson, J. A.] Univ Birmingham, Sch Phys & Astron, Birmingham B15 2TT, W Midlands, England, Email: yoshinobu.unno@kek.jp
Corporate Author Thesis
Publisher Elsevier Science Bv Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:000344621000016 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 2002
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Author Helling, C. et al; Bernabeu, J.; Lacasta, C.; Solaz, C.
Title Strip sensor performance in prototype modules built for ATLAS ITk Type Journal Article
Year 2020 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 978 Issue Pages 164402 - 6pp
Keywords (down) Silicon strip sensors; Strip module; Inter-strip isolation; Readout noise
Abstract ATLAS experiment is preparing an upgrade of its detector for High-Luminosity LHC (HL-LHC) operation. The upgrade involves installation of the new all-silicon Inner Tracker (ITk). In the context of the ITk preparations, more than 80 strip modules were built with prototype barrel sensors. They were tested with electrical readout on a per-channel basis. In general, an excellent performance was observed, consistent with previous ASIC-level and sensor-level tests. However, the lessons learned included two phenomena important for the future phases of the project. First was the need to store and test the modules in a dry environment due to humidity sensitivity of the sensors. The second was an observation of high noise regions for 2 modules. The high noise regions were tested further in several ways, including monitoring the performance as a function of time and bias voltage. Additionally, direct sensor-level tests were performed on the affected channels. The inter-strip resistance and bias resistance tests showed low values, indicating a temporary loss of the inter-strip isolation. A subsequent recovery of the noise performance was observed. We present the test details, an analysis of how the inter-strip isolation affects the module noise, and the relationship with sensor-level quality control tests.
Address [Helling, C.; Affolder, A. A.; Fadeyev, V.; Galloway, Z.; Gignac, M.; Gunnell, J.; Martinez-Mckinney, F.; Kang, N.; Yarwick, J.] Univ Calif Santa Cruz, Santa Cruz Inst Particle Phys, Santa Cruz, CA 95064 USA, Email: fadeyev@ucsc.edu
Corporate Author Thesis
Publisher Elsevier Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:000560076700015 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 4505
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Author Ullan, M.; Benitez, V.; Quirion, D.; Zabala, M.; Pellegrini, G.; Lozano, M.; Lacasta, C.; Soldevila, U.; Garcia, C.; Fadeyev, V.; Wortman, J.; DeFilippis, J.; Shumko, M.; Grillo, A.A.; Sadrozinski, H.F.W.
Title Low-resistance strip sensors for beam-loss event protection Type Journal Article
Year 2014 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 765 Issue Pages 252-257
Keywords (down) Silicon radiation detectors; Strip sensors; Punch through protection; Beam loss; HL-LHC; ATLAS Upgrade
Abstract AC coupled silicon strip sensors can be damaged in case of a beam loss due to the possibility of a large charge accumulation in the bulk, developing very high voltages across the coupling capacitors which can destroy them. Punch-through structures are currently used to avoid this problem helping to evacuate the accumulated charge as large voltages are developing. Nevertheless, previous experiments, performed with laser pulses, have shown that these structures can become ineffective in relatively long strips. The large value of the implant resistance can effectively isolate the “far” end of the strip from the punchthrough structure leading to large voltages. We present here our developments to fabricate lowresistance strip sensors to avoid this problem. The deposition of a conducting material in contact with the implants drastically reduces the strip resistance, assuring the effectiveness of the punch-through structures. First devices have been fabricated with this new technology. Initial results with laser tests show the expected reduction in peak voltages on the low resistivity implants. Other aspects of the sensor performance, including the signal formation, are not affected by the new technology.
Address [Ullan, M.; Benitez, V.; Quirion, D.; Zabala, M.; Pellegrini, G.; Lozano, M.] CSIC, Ctr Nacl Microelect IMB CNM, Barcelona 08193, Spain, Email: Miguel.Ullan@imb-cnm.csic.es
Corporate Author Thesis
Publisher Elsevier Science Bv Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:000344621000048 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 2003
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Author Benitez, V. et al; Bernabeu, J.; Garcia, C.; Lacasta, C.; Marco, R.; Rodriguez, D.; Santoyo, D.; Solaz, C.; Soldevila, U.
Title Sensors for the End-cap prototype of the Inner Tracker in the ATLAS Detector Upgrade Type Journal Article
Year 2016 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 833 Issue Pages 226-232
Keywords (down) Silicon radiation detectors; Strip sensors; HL-LHC; ATLAS Upgrade; Inner Tracker (ITk); End-cap
Abstract The new silicon microstrip sensors of the End-cap part of the HL-LHC ATLAS Inner Tracker (ITk) present a number of challenges due to their complex design features such as the multiple different sensor shapes, the varying strip pitch, or the built-In stereo angle. In order to investigate these specific problems, the “petalet” prototype was defined as a small End-cap prototype. The sensors for the petalet prototype include several new layout and technological solutions to investigate the issues, they have been tested in detail by the collaboration. The sensor description and detailed test results are presented in this paper. New software tools have been developed for the automatic layout generation of the complex designs. The sensors have been fabricated, characterized and delivered to the institutes in the collaboration for their assembly on petalet prototypes. This paper describes the lessons learnt from the design and tests of the new solutions implemented on these sensors, which are being used for the full petal sensor development. This has resulted in the ITIc strip, community acquiring the necessary expertise to develop the full End-cap structure, the petal.
Address [Benitez, V.; Ullan, M.; Quirion, D.; Pellegrini, G.; Fleta, C.; Lozano, M.] CSIC, CNM, IMB, Campus Univ Bellaterra, Barcelona 08193, Spain, Email: miguel.ullan@imb-cnm.csic.es
Corporate Author Thesis
Publisher Elsevier Science Bv Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:000383818200032 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 2816
Permanent link to this record