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Author |
Poley, L.; Blue, A.; Bloch, I.; Buttar, C.; Fadeyev, V.; Fernandez-Tejero, J.; Fleta, C.; Hacker, J.; Lacasta, C.; Miñano, M.; Renzmann, M.; Rossi, E.; Sawyer, C.; Sperlich, D.; Stegler, M.; Ullan, M.; Unno, Y. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Mapping the depleted area of silicon diodes using a micro-focused X-ray beam |
Type |
Journal Article |
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Year |
2019 |
Publication |
Journal of Instrumentation |
Abbreviated Journal |
J. Instrum. |
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Volume |
14 |
Issue |
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Pages |
P03024 - 14pp |
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Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
Si microstrip and pad detectors; Detector design and construction technologies and materials; Particle tracking detectors (Solid-state detectors); Radiation-hard detectors |
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Abstract |
For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker (ITk). The ITk will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of 500V to maintain a low noise and power dissipation. In order to minimise sensor leakage currents, particularly in the high-radiation environment inside the ATLAS detector, sensors are foreseen to be operated at low temperatures and to be manufactured from wafers with a high bulk resistivity of several k Omega.cm. Simulations showed the electric field inside sensors with high bulk resistivity to extend towards the sensor edge, which could lead to increased surface currents for narrow dicing edges. In order to map the electric field inside biased silicon sensors with high bulk resistivity, three diodes from ATLAS silicon strip sensor prototype wafers were studied with a monochromatic, micro-focused X-ray beam at the Diamond Light Source (Didcot, U.K.). For all devices under investigation, the electric field inside the diode was mapped and its dependence on the applied bias voltage was studied. |
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Address |
[Poley, L.] Lawrence Berkeley Natl Lab, Cyclotron Rd, Berkeley, CA 94720 USA, Email: Anne-Luise.Poley@desy.de |
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Iop Publishing Ltd |
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English |
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ISSN |
1748-0221 |
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Notes |
WOS:000463330900012 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
3973 |
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Author |
Affolder, A. et al; Garcia, C.; Lacasta, C.; Marco, R.; Marti-Garcia, S.; Miñano, M.; Soldevila, U. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Silicon detectors for the sLHC |
Type |
Journal Article |
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Year |
2011 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
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Volume |
658 |
Issue |
1 |
Pages |
11-16 |
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Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
Silicon particle detectors; Radiation damage; Irradiation; Charge collection efficiency |
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Abstract |
In current particle physics experiments, silicon strip detectors are widely used as part of the inner tracking layers. A foreseeable large-scale application for such detectors consists of the luminosity upgrade of the Large Hadron Collider (LHC), the super-LHC or sLHC, where silicon detectors with extreme radiation hardness are required. The mission statement of the CERN RD50 Collaboration is the development of radiation-hard semiconductor devices for very high luminosity colliders. As a consequence, the aim of the R&D programme presented in this article is to develop silicon particle detectors able to operate at sLHC conditions. Research has progressed in different areas, such as defect characterisation, defect engineering and full detector systems. Recent results from these areas will be presented. This includes in particular an improved understanding of the macroscopic changes of the effective doping concentration based on identification of the individual microscopic defects, results from irradiation with a mix of different particle types as expected for the sLHC, and the observation of charge multiplication effects in heavily irradiated detectors at very high bias voltages. |
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Address |
[Barber, T.; Breindl, M.; Driewer, A.; Koehler, M.; Kuehn, S.; Parzefall, U.; Preiss, J.; Walz, M.; Wiik, L.] Univ Freiburg, Inst Phys, D-79104 Freiburg, Germany, Email: Ulrich.Parzefall@physik.uni-freiburg.de |
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Publisher |
Elsevier Science Bv |
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English |
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0168-9002 |
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Notes |
WOS:000297783300004 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
836 |
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Permanent link to this record |
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Author |
ATLAS Collaboration (Aad, G. et al); Bernabeu Verdu, J.; Cabrera Urban, S.; Castillo Gimenez, V.; Costa, M.J.; Fassi, F.; Ferrer, A.; Fiorini, L.; Fuster, J.; Garcia, C.; Garcia-Argos, C.; Garcia Navarro, J.E.; Gonzalez de la Hoz, S.; Hernandez Jimenez, Y.; Higon-Rodriguez, E.; Irles Quiles, A.; Kaci, M.; King, M.; Lacasta, C.; Lacuesta, V.R.; March, L.; Marti-Garcia, S.; Miñano, M.; Mitsou, V.A.; Moles-Valls, R.; Oliver Garcia, E.; Pedraza Lopez, S.; Perez Garcia-Estañ, M.T.; Romero Adam, E.; Ros, E.; Salt, J.; Sanchez Martinez, V.; Soldevila, U.; Sanchez, J.; Torro Pastor, E.; Valero, A.; Valladolid Gallego, E.; Valls Ferrer, J.A.; Villaplana Perez, M.; Vos, M. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Operation and performance of the ATLAS semiconductor tracker |
Type |
Journal Article |
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Year |
2014 |
Publication |
Journal of Instrumentation |
Abbreviated Journal |
J. Instrum. |
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Volume |
9 |
Issue |
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Pages |
P08009 - 73pp |
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Keywords ![sorted by Keywords field, ascending order (up)](img/sort_asc.gif) |
Solid state detectors; Charge transport and multiplication in solid media; Particle tracking detectors (Solid-state detectors); Detector modelling and simulations I (interaction of radiation with matter, interaction of photons with matter, interaction of hadrons with matter, etc) |
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Abstract |
The semiconductor tracker is a silicon microstrip detector forming part of the inner tracking system of the ATLAS experiment at the LHC. The operation and performance of the semiconductor tracker during the first years of LHC running are described. More than 99% of the detector modules were operational during this period, with an average intrinsic hit efficiency of (99.74 +/- 0.04)%. The evolution of the noise occupancy is discussed, and measurements of the Lorentz angle, delta-ray production and energy loss presented. The alignment of the detector is found to be stable at the few-micron level over long periods of time. Radiation damage measurements, which include the evolution of detector leakage currents, are found to be consistent with predictions and are used in the verification of radiation background simulations. |
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Address |
[Jackson, P.; Soni, N.; White, M. J.] Univ Adelaide, Dept Phys, Adelaide, SA, Australia |
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Publisher |
Iop Publishing Ltd |
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English |
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1748-0221 |
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Notes |
WOS:000341927600037 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
1945 |
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Permanent link to this record |