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Author Miñano, M. doi  openurl
  Title Radiation Hard Silicon Strips Detectors for the SLHC Type Journal Article
  Year 2011 Publication IEEE Transactions on Nuclear Science Abbreviated Journal IEEE Trans. Nucl. Sci.  
  Volume 58 Issue 3 Pages 1135-1140  
  Keywords (up) High energy physics; microstrip; radiation detectors; silicon; SLHC  
  Abstract While the Large Hadron Collider (LHC) began taking data in 2009, scenarios for a machine upgrade to achieve a much higher luminosity are being developed. In the current planning, it is foreseen to increase the luminosity of the LHC at CERN around 2018. As radiation damage scales with integrated luminosity, the particle physics experiments will need to be equipped with a new generation of radiation hard detectors. This article reports on the status of the R&D projects on radiation hard silicon strips detectors for particle physics, linked to the Large Hadron Collider Upgrade, super-LHC (sLHC) of the ATLAS microstrip detector. The primary focus of this report is on measuring the radiation hardness of the silicon materials and the detectors under study. This involves designing silicon detectors, irradiating them to the sLHC radiation levels and studying their performance as particle detectors. The most promising silicon detector for the different radiation levels in the different regions of the ATLAS microstrip detector will be presented. Important challenges related to engineering layout, powering, cooling and reading out a very large strip detector are presented. Ideas on possible schemes for the layout and support mechanics will be shown.  
  Address IFIC UV CSIC, Inst Fis Corpuscular, E-46071 Valencia, Spain, Email: mercedes.minano@ific.uv.es  
  Corporate Author Thesis  
  Publisher Ieee-Inst Electrical Electronics Engineers Inc Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0018-9499 ISBN Medium  
  Area Expedition Conference  
  Notes ISI:000291659300001 Approved no  
  Is ISI yes International Collaboration no  
  Call Number IFIC @ pastor @ Serial 651  
Permanent link to this record
 

 
Author Goasduff, A. et al; Gadea, A. doi  openurl
  Title The GALILEO gamma-ray array at the Legnaro National Laboratories Type Journal Article
  Year 2021 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 1015 Issue Pages 165753 - 15pp  
  Keywords (up) High-resolution gamma-ray spectroscopy; HPGe; Silicon; Neutron; Electronics; DAQ  
  Abstract GALILEO, a new 4 pi high-resolution gamma-detection array, based on HPGe detectors, has been developed and installed at the Legnaro National Laboratories. The GALILEO array greatly benefits from a fully-digital readout chain, customized DAQ, and a variety of complementary detectors to improve the resolving power by the detection of particles, ions or high-energy gamma-ray transitions. In this work, a full description of the array, including electronics and DAQ, is presented together with its complementary instrumentation.  
  Address [Goasduff, A.; Valiente-Dobon, J. J.; Barrientos, D.; Biasotto, M.; Brugnara, D.; Cocconi, P.; Cortes, M. L.; de Angelis, G.; Egea, F. J.; Fantinel, S.; Gambalonga, A.; Gottardo, A.; Gozzelino, A.; Gregor, E. T.; Gulmini, M.; Hadynska-Klek, K.; Illana, A.; Jaworski, G.; Napoli, D. R.; Pellumaj, J.; Perez-Vidal, R. M.; Rosso, D.; Siciliano, M.; Toniolo, N.; Volpe, V.; Zanon, I] INFN Lab Nazl Legnaro, Legnaro, Italy, Email: alain.goasduff@lnl.infn.it  
  Corporate Author Thesis  
  Publisher Elsevier Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000717077900015 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 5025  
Permanent link to this record
 

 
Author Latonova, V. et al; Bernabeu, J.; Lacasta, C.; Solaz, C.; Soldevila, U. doi  openurl
  Title Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation Type Journal Article
  Year 2023 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 1050 Issue Pages 168119 - 5pp  
  Keywords (up) HL-LHC; ATLAS ITk; Silicon micro-strip sensor; Polysilicon bias resistor; Testchip  
  Abstract The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb(-1) means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 center dot 10(15) MeVn(eq)/cm(2) and 0.66MGy, respectively, including a safety factor of 1.5. Radiation hard n(+)-in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n(+) implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. We discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips.  
  Address [Latonova, V.; Federicova, P.; Kroll, J.; Kvasnicka, J.; Mikestikova, M.] Acad Sci Czech Republ, Inst Phys, Slovance 2, Prague 8, Czech Republic, Email: vera.latonova@cern.ch  
  Corporate Author Thesis  
  Publisher Elsevier Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:001035405300001 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 5601  
Permanent link to this record
 

 
Author Fernandez-Tejero, J. et al; Soldevila, U. doi  openurl
  Title Humidity sensitivity of large area silicon sensors: Study and implications Type Journal Article
  Year 2020 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 978 Issue Pages 164406 - 6pp  
  Keywords (up) Humidity sensitivity; Large area silicon sensors; Slim-edge; HL-LHC  
  Abstract The production of large area sensors is one of the main challenges that the ATLAS collaboration faces for the new Inner-Tracker full-silicon detector. During the prototype fabrication phase for the High Luminosity Large Hadron Collider upgrade, several ATLAS institutes observed indications of humidity sensitivity of large area sensors, even at relative humidities well below the dew point. Specifically, prototype Barrel and End-Cap silicon strip sensors fabricated in 6-inch wafers manifest a prompt decrease of the breakdown voltage when operating under high relative humidity, adversely affecting the performance of the sensors. In addition to the investigation of these prototype sensors, a specific fabrication batch with special passivation is also studied, allowing for a deeper understanding of the responsible mechanisms. This work presents an extensive study of this behaviour on large area sensors. The locations of the hotspots at the breakdown voltage at high humidity are revealed using different infrared thermography techniques. Several palliative treatments are attempted, proving the influence of sensor cleaning methods, as well as baking, on the device performance, but no improvement on the humidity sensitivity was achieved. Furthermore, a study of the incidence of the sensitivity in different batches is also presented, introducing a hypothesis of the origins of the humidity sensitivity associated to the sensor edge design, together with passivation thickness and conformity. Several actions to be taken during sensor production and assembly are extracted from this study, in order to minimize the impact of humidity sensitivity on the performance of large area silicon sensors for High Energy Physics experiments.  
  Address [Fernandez-Tejero, J.; Avino, O.; Fleta, C.; Ullan, M.; Vellvehi, M.] CSIC, Ctr Nacl Microelect IMB CNM, Campus UAB Bellaterra, Barcelona 08193, Spain, Email: Xavi.Fdez@cern.ch  
  Corporate Author Thesis  
  Publisher Elsevier Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000560076700009 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 4504  
Permanent link to this record
 

 
Author Briz, J.A.; Nerio, A.N.; Ballesteros, C.; Borge, M.J.G.; Martinez, P.; Perea, A.; Tavora, V.G.; Tengblad, O.; Ciemala, M.; Maj, A.; Olko, P.; Parol, W.; Pedracka, A.; Sowicki, B.; Zieblinski, M.; Nacher, E. url  doi
openurl 
  Title Proton Radiographs Using Position-Sensitive Silicon Detectors and High-Resolution Scintillators Type Journal Article
  Year 2022 Publication IEEE Transactions on Nuclear Science Abbreviated Journal IEEE Trans. Nucl. Sci.  
  Volume 69 Issue 4 Pages 696-702  
  Keywords (up) LaBr3; particle tracking; proton computed tomography (pCT); proton radiograph; proton therapy; scintillation detectors; silicon detectors  
  Abstract Proton therapy is a cancer treatment technique currently in growth since it offers advantages with respect to conventional X-ray and gamma-ray radiotherapy. In particular, better control of the dose deposition allowing to reach higher conformity in the treatments causing less secondary effects. However, in order to take full advantage of its potential, improvements in treatment planning and dose verification are required. A new prototype of proton computed tomography scanner is proposed to design more accurate and precise treatment plans for proton therapy. Our prototype is formed by double-sided silicon strip detectors and scintillators of LaBr3(Ce) with high energy resolution and fast response. Here, the results obtained from an experiment performed using a 100-MeV proton beam are presented. Proton radiographs of polymethyl methacrylate (PMMA) samples of 50-mm thickness with spatial patterns in aluminum were taken. Their properties were studied, including reproduction of the dimensions, spatial resolution, and sensitivity to different materials. Structures of up to 2 mm are well resolved and the sensitivity of the system was enough to distinguish the thicknesses of 10 mm of aluminum or PMMA. The spatial resolution of the images was 0.3 line pairs per mm (MTF-10%). This constitutes the first step to validate the device as a proton radiography scanner.  
  Address [Briz, J. A.; Nerio, A. N.; Ballesteros, C.; Borge, M. J. G.; Martinez, P.; Perea, A.; Tavora, V. G.; Tengblad, O.] Inst Estruct Mat CSIC, Madrid 28006, Spain, Email: jose.briz@csic.es  
  Corporate Author Thesis  
  Publisher Ieee-Inst Electrical Electronics Engineers Inc Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0018-9499 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000803113800017 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 5245  
Permanent link to this record
 

 
Author Etxebeste, A.; Barrio, J.; Muñoz, E.; Oliver, J.F.; Solaz, C.; Llosa, G. doi  openurl
  Title 3D position determination in monolithic crystals coupled to SiPMs for PET Type Journal Article
  Year 2016 Publication Physics in Medicine and Biology Abbreviated Journal Phys. Med. Biol.  
  Volume 61 Issue 10 Pages 3914-3934  
  Keywords (up) monolithic crystal; silicon photomultiplier; depth of interaction  
  Abstract The interest in using continuous monolithic crystals in positron emission tomography (PET) has grown in the last years. Coupled to silicon photomultipliers (SiPMs), the detector can combine high sensitivity and high resolution, the two main factors to be maximized in a positron emission tomograph. In this work, the position determination capability of a detector comprised of a 12 x 12 x 10 mm(3) LYSO crystal coupled to an 8 x 8-pixel array of SiPMs is evaluated. The 3D interaction position of.-rays is estimated using an analytical model of the light distribution including reflections on the facets of the crystal. Monte Carlo simulations have been performed to evaluate different crystal reflectors and geometries. The method has been characterized and applied to different cases. Intrinsic resolution obtained with the position estimation method used in this work, applied to experimental data, achieves sub-millimetre resolution values. Average resolution over the detector surface for 5 mm thick crystal is similar to 0.9 mm FWHM and similar to 1.2 mm FWHM for 10 mm thick crystal. Depth of interaction resolution is close to 2 mm FWHM in both cases, while the FWTM is similar to 5.3 mm for 5 mm thick crystal and similar to 9.6 mm for 10 mm thick crystal.  
  Address [Etxebeste, Ane; Barrio, John; Munoz, Enrique; Oliver, Josep F.; Solaz, Carles; Llosa, Gabriela] Univ Valencia, CSIC, Inst Fis Corpuscular, Valencia, Spain, Email: ane.etxebeste@ific.uv.es  
  Corporate Author Thesis  
  Publisher Iop Publishing Ltd Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-9155 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000376792800014 Approved no  
  Is ISI yes International Collaboration no  
  Call Number IFIC @ pastor @ Serial 2708  
Permanent link to this record
 

 
Author Studen, A.; Chesi, E.; Cindro, V.; Clinthorne, N.H.; Cochran, E.; Grosicar, B.; Honscheid, K.; Kagan, H.; Lacasta, C.; Llosa, G.; Linhart, V.; Mikuz, M.; Stankova, V.; Weilhammer, P.; Zontar, D. doi  openurl
  Title A silicon PET probe Type Journal Article
  Year 2011 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 648 Issue Pages S255-S258  
  Keywords (up) PET; Silicon detectors  
  Abstract PET scanners with high spatial resolution offer a great potential in improving diagnosis, therapy monitoring and treatment validation for several severe diseases. One way to improve resolution of a PET scanner is to extend a conventional PET ring with a small probe with excellent spatial resolution. The probe is intended to be placed close to the area of interest. The coincidences of interactions within the probe and the external ring provide a subset of data which combined with data from external ring, greatly improve resolution in the area viewed by the probe. Our collaboration is developing a prototype of a PET probe, composed of high-resolution silicon pad detectors. The detectors are 1 mm thick, measuring 40 by 26 mm(2), and several such sensors are envisaged to either compensate for low stopping power of silicon or increase the area covered by the probe. The sensors are segmented into 1 mm(3) cubic voxels, giving 1040 readout pads per sensor. A module is composed of two sensors placed in a back-to-back configuration, allowing for stacking fraction of up to 70% within a module. The pads are coupled to a set of 16 ASICs (VaTaGP7.1 by IDEAS) per module and read out through a custom designed data acquisition board, allowing for trigger and data interfacing with the external ring. This paper presents an overview of probe requirements and expected performance parameters. It will focus on the characteristics of the silicon modules and their impact on overall probe performance, including spatial resolution, energy resolution and timing resolution. We will show that 1 mm(3) voxels will significantly extend the spatial resolution of conventional PET rings, and that broadening of timing resolution related to varying depth of photon interactions can be compensated to match the timing resolution of the external ring. The initial test results of the probe will also be presented.  
  Address [Studen, A.; Cindro, V.; Grosicar, B.; Mikuz, M.; Zontar, D.] Jozef Stefan Inst, Ljubljana, Slovenia, Email: andrej.studen@ijs.si  
  Corporate Author Thesis  
  Publisher Elsevier Science Bv Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000305376900063 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 1070  
Permanent link to this record
 

 
Author Clinthorne, N.; Brzezinski, K.; Chesi, E.; Cochran, E.; Grkovski, M.; Grosicar, B.; Honscheid, K.; Huh, S.; Kagan, H.; Lacasta, C.; Linhart, V.; Mikuz, M.; Smith, D.S.; Stankova, V.; Studen, A.; Weilhammer, P.; Zontar, D. doi  openurl
  Title Silicon as an unconventional detector in positron emission tomography Type Journal Article
  Year 2013 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 699 Issue Pages 216-220  
  Keywords (up) PET; Silicon detectors; Multiresolution imaging; Magnifying PET  
  Abstract Positron emission tomography (PET) is a widely used technique in medical imaging and in studying small animal models of human disease. In the conventional approach, the 511 keV annihilation photons emitted from a patient or small animal are detected by a ring of scintillators such as LYSO read out by arrays of photodetectors. Although this has been successful in achieving similar to 5 mm FWHM spatial resolution in human studies and similar to 1 mm resolution in dedicated small animal instruments, there is interest in significantly improving these figures. Silicon, although its stopping power is modest for 511 keV photons, offers a number of potential advantages over more conventional approaches including the potential for high intrinsic spatial resolution in 3D. To evaluate silicon in a variety of PET “magnifying glass” configurations, an instrument was constructed that consists of an outer partial-ring of PET scintillation detectors into which various arrangements of silicon detectors are inserted to emulate dual-ring or imaging probe geometries. Measurements using the test instrument demonstrated the capability of clearly resolving point sources of Na-22 having a 1.5 mm center-to-center spacing as well as the 1.2 mm rods of a F-18-filled resolution phantom. Although many challenges remain, silicon has potential to become the PET detector of choice when spatial resolution is the primary consideration. (C) 2012 Elsevier B.V. All rights reserved.  
  Address [Clinthorne, Neal; Huh, Sam] Univ Michigan, Dept Radiol, Ann Arbor, MI 48109 USA, Email: nclintho@umich.edu  
  Corporate Author Thesis  
  Publisher Elsevier Science Bv Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000312809200045 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 1290  
Permanent link to this record
 

 
Author Studen, A.; Brzezinski, K.; Chesi, E.; Cindro, V.; Clinthorne, N.H.; Cochran, E.; Grosicar, B.; Grkovski, M.; Honscheid, K.; Kagan, H.; Lacasta, C.; Llosa, G.; Mikuz, M.; Stankova, V.; Weilhammer, P.; Zontar, D. doi  openurl
  Title Silicon detectors for combined MR-PET and MR-SPECT imaging Type Journal Article
  Year 2013 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 702 Issue Pages 88-90  
  Keywords (up) PET; Silicon detectors; SPECT  
  Abstract Silicon based devices can extend PET-MR and SPECT-MR imaging to applications, where their advantages in performance outweigh benefits of high statistical counts. Silicon is in many ways an excellent detector material with numerous advantages, among others: excellent energy and spatial resolution, mature processing technology, large signal to noise ratio, relatively low price, availability, versatility and malleability. The signal in silicon is also immune to effects of magnetic field at the level normally used in MR devices. Tests in fields up to 7 T were performed in a study to determine effects of magnetic field on positron range in a silicon PET device. The curvature of positron tracks in direction perpendicular to the field's orientation shortens the distance between emission and annihilation point of the positron. The effect can be fully appreciated for a rotation of the sample for a fixed field direction, compressing range in all dimensions. A popular Ga-68 source was used showing a factor of 2 improvement in image noise compared to zero field operation. There was also a little increase in noise as the reconstructed resolution varied between 2.5 and 1.5 mm. A speculative applications can be recognized in both emission modalities, SPECT and PET. Compton camera is a subspecies of SPECT, where a silicon based scatter as a MR compatible part could inserted into the MR bore and the secondary detector could operate in less constrained environment away from the magnet. Introducing a Compton camera also relaxes requirements of the radiotracers used, extending the range of conceivable photon energies beyond 140.5 keV of the Tc-99m. In PET, one could exploit the compressed sub-millimeter range of positrons in the magnetic field. To exploit the advantage, detectors with spatial resolution commensurate to the effect must be used with silicon being an excellent candidate. Measurements performed outside of the MR achieving spatial resolution below 1 mm are reported.  
  Address [Studen, A.; Cindro, V.; Grosicar, B.; Grkovski, M.; Mikuz, M.; Zontar, D.] Jozef Stefan Inst, Ljubljana, Slovenia, Email: andrej.studen@ijs.si  
  Corporate Author Thesis  
  Publisher Elsevier Science Bv Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000314682300026 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 1331  
Permanent link to this record
 

 
Author Labiche, M. et al; Caballero, L.; Rubio, B. url  doi
openurl 
  Title TIARA: A large solid angle silicon array for direct reaction studies with radioactive beams Type Journal Article
  Year 2010 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 614 Issue 3 Pages 439-448  
  Keywords (up) Position sensitive silicon detectors; Nucleon transfer reactions; Radioactive beams; Inverse kinematics  
  Abstract A compact, quasi-4 pi position sensitive silicon array. TIARA, designed to study direct reactions induced by radioactive beams in inverse kinematics is described here. The Transfer and Inelastic All-angle Reaction Array (TIARA) consists of 8 resistive charge division detectors forming an octagonal barrel around the target and a set of double-sided silicon-strip annular detectors positioned at each end of the barrel. The detector was coupled to the gamma-ray array EXOGAM and the spectrometer VAMOS at the GANIL Laboratory to demonstrate the potential of such an apparatus with radioactive beams. The N-14(d,p)N-15 reaction, well known in direct kinematics, has been carried out in inverse kinematics for that purpose. The observation of the N-15 ground state and excited states at 7.16 and 7.86 MeV is presented here as well as the comparison of the measured proton angular distributions with DWBA calculations. Transferred l-values are in very good agreement with both theoretical calculations and previous experimental results obtained in direct kinematics.  
  Address [Labiche, M.; Lemmon, R. C.; Appleton, S.; Faiz, K.; Pucknell, V. F. E.; Warner, D. D.] STFC Daresbury Lab, Nucl Phys Grp, Warrington WA4 4AD, Cheshire, England, Email: marc.labiche@stfc.ac.uk  
  Corporate Author Thesis  
  Publisher Elsevier Science Bv Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes ISI:000276001800008 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ elepoucu @ Serial 477  
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