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Author Babeluk, M. et al; Marinas, C.
Title CMOS MAPS upgrade for the Belle II Vertex Detector Type Journal Article
Year 2023 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 1048 Issue (up) Pages 168015 - 5pp
Keywords Belle II; VXD; SVD; PXD; VTX; Upgrade; CMOS; DMAPS
Abstract The success of the Belle II experiment in Japan relies on the very high instantaneous luminosity, close to 6x1035 cm-2 s-1, expected from the SuperKEKB collider. The corresponding beam conditions at such luminosity levels generate large rates of background particles and creates stringent constraints on the vertex detector, adding to the physics requirements. Current prospects for the occupancy rates in the present vertex detector (VXD) at full luminosity fall close to the acceptable limits and bear large uncertainties. In this context, the Belle II collaboration is considering the possibility to install an upgraded VXD system around 2027 to provide a sufficient safety margin with respect to the expected background rate and possibly enhance tracking and vertexing performance. The VTX collaboration has started the design of a fully pixelated VXD, called VTX, based on fast and highly granular Depleted Monolithic Active Pixel Sensors (DMAPS) integrated on light support structures. The two main technical features of the VTX proposal are the usage of a single sensor type over all the layers of the system and the overall material budget below 2% of radiation length, compared to the current VXD which has two different sensor technologies and about 3% of radiation length. A dedicated sensor (OBELIX), taylored to the specific needs of Belle II, is under development, evolving from the existing TJ-Monopix2 sensor. The time-stamping precision below 100 ns will allow all VTX layers to take part in the track finding strategy contrary to the current situation. The first two detection layers are designed according to a self-supported all-silicon ladder concept, where 4 contiguous sensors are diced out of a wafer, thinned and interconnected with post-processed redistribution layers. The outermost detection layers follow a more conventional approach with a cold plate and carbon fibre support structure, and light flex cables interconnecting the sensors. This document will review the context, technical details and development status of the proposed Belle II VTX.
Address [Babeluk, M.; Bergauer, T.; Irmler, C.; Schwanda, C.] Austrian Acad Sci, Inst High Energy Phys, A-1050 Vienna, Austria, Email: christian.wessel@desy.de
Corporate Author Thesis
Publisher Elsevier Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:000990246200001 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 5538
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Author Natochii, A. et al; Marinas, C.
Title Measured and projected beam backgrounds in the Belle II experiment at the SuperKEKB collider Type Journal Article
Year 2023 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 1055 Issue (up) Pages 168550 - 21pp
Keywords Detector background; Lepton collider; Monte-Carlo simulation
Abstract The Belle II experiment at the SuperKEKB electron-positron collider aims to collect an unprecedented data set of 50 ab-1 to study CP-violation in the B-meson system and to search for Physics beyond the Standard Model. SuperKEKB is already the world's highest-luminosity collider. In order to collect the planned data set within approximately one decade, the target is to reach a peak luminosity of 6 x 1035 cm-2 s-1by further increasing the beam currents and reducing the beam size at the interaction point by squeezing the betatron function down to betay* = 0.3 mm. To ensure detector longevity and maintain good reconstruction performance, beam backgrounds must remain well controlled. We report on current background rates in Belle II and compare these against simulation. We find that a number of recent refinements have significantly improved the background simulation accuracy. Finally, we estimate the safety margins going forward. We predict that backgrounds should remain high but acceptable until a luminosity of at least 2.8 x 1035 cm-2 s-1is reached for betay* = 0.6 mm. At this point, the most vulnerable Belle II detectors, the Time-of-Propagation (TOP) particle identification system and the Central Drift Chamber (CDC), have predicted background hit rates from single-beam and luminosity backgrounds that add up to approximately half of the maximum acceptable rates.
Address [Natochii, A.; Browder, T. E.; Schueler, J.; Vahsen, S. E.] Univ Hawaii, Honolulu, HI 96822 USA, Email: natochii@hawaii.edu;
Corporate Author Thesis
Publisher Elsevier Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:001056103200001 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 5626
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Author Andricek, L. et al; Lacasta, C.; Marinas, C.; Vos, M.
Title Intrinsic resolutions of DEPFET detector prototypes measured at beam tests Type Journal Article
Year 2011 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 638 Issue (up) 1 Pages 24-32
Keywords Silicon pixel detector; Detector resolution; Spatial resolution; DEPFET; Beam test
Abstract The paper is based on the data of the 2009 DEPFET beam test at CERN SPS. The beam test used beams of pions and electrons with energies between 40 and 120 GeV, and the sensors tested were prototypes with thickness of 450 μm and pixel pitch between 20 and 32 μm. Intrinsic resolutions of the detectors are calculated by disentangling the contributions of measurement errors and multiple scattering in tracking residuals. Properties of the intrinsic resolution estimates and factors that influence them are discussed. For the DEPFET detectors in the beam test, the calculation yields intrinsic resolutions of approximate to 1 μm, with a typical accuracy of 0.1 μm. Bias scan, angle scan, and energy scan are used as example studies to show that the intrinsic resolutions are a useful tool in studies of detector properties. With sufficiently precise telescopes, detailed resolution maps can be constructed and used to study and optimize detector performance.
Address [Dolezal, Z.; Drasal, Z.; Kodys, P.; Kvasnicka, P.; Malina, L.; Scheirich, J.] Charles Univ Prague, Fac Math & Phys, Inst Particle & Nucl Phys, CR-18000 Prague, Czech Republic, Email: peter.kodys@mff.cuni.cz
Corporate Author Thesis
Publisher Elsevier Science Bv Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes ISI:000290082600005 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 618
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Author Marinas, C.; Vos, M.
Title The Belle-II DEPFET pixel detector: A step forward in vertexing in the superKEKB flavour factory Type Journal Article
Year 2011 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 650 Issue (up) 1 Pages 59-63
Keywords SuperKEKB; Belle-II; DEPFET; Pixel detector; ASIC; Mechanics; Cooling; Resolution
Abstract An upgrade of the successful asymmetric e(+)e(-) collider in KEK (Tsukuba, Japan) is foreseen by the fall of 2013. This new Super Flavor Factory will deliver an increased instantaneous luminosity of up to L = 8 x 10(35) cm(-2) s(-1), 40 times larger than the current KEKB machine. To exploit these new conditions and provide high precision measurements of the decay vertex of the B meson systems, a new silicon vertex detector will be operated in Belle. This new detector will consist of two layers of DEPFET Active Pixel Sensors as close as possible to the interaction point. DEPFET is a field effect transistor, with an additional deep implant underneath the channel's gate, integrated on a completely depleted bulk. This technology offers detection and an in-pixel amplification stage, while keeping low the power consumption. Under these conditions, thin sensors with small pixel size and low intrinsic noise are possible. In this article, an overview of the full system will be described, including the sensor, the front-end electronics and both the mechanical and thermal proposed solutions as well as the expected performance.
Address [Marinas, C; Vos, M] CSIC UVEG, IFIC, Inst Fis Corpuscular, Valencia, Spain, Email: Carlos.Marinas.Pardo@cern.ch
Corporate Author Thesis
Publisher Elsevier Science Bv Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:000295106500015 Approved no
Is ISI yes International Collaboration no
Call Number IFIC @ elepoucu @ Serial 768
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Author Boronat, M.; Marinas, C.; Frey, A.; Garcia, I.; Schwenker, B.; Vos, M.; Wilk, F.
Title Physical Limitations to the Spatial Resolution of Solid-State Detectors Type Journal Article
Year 2015 Publication IEEE Transactions on Nuclear Science Abbreviated Journal IEEE Trans. Nucl. Sci.
Volume 62 Issue (up) 1 Pages 381-386
Keywords Charged particle tracking; silicon detectors; solid state devices
Abstract In this paper we explore the effect of delta-ray emission and fluctuations in the signal deposition on the detection of charged particles in silicon-based detectors. We show that these two effects ultimately limit the resolution that can be achieved by interpolation of the signal in finely segmented position-sensitive solid-state devices.
Address [Boronat, M.; Garcia, I.; Vos, M.] IFIC UVEG CSIC, E-46980 Valencia, Spain, Email: marcel.vos@ific.uv.es
Corporate Author Thesis
Publisher Ieee-Inst Electrical Electronics Engineers Inc Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0018-9499 ISBN Medium
Area Expedition Conference
Notes WOS:000349672900025 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 2140
Permanent link to this record