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Author |
Barrientos, L.; Borja-Lloret, M.; Casaña, J.V.; Dendooven, P.; Garcia Lopez, J.G.; Hueso-Gonzalez, F.; Jiméeez-Ramos, M.C.; Perez-Curbelo, J.; Ros, A.; Roser, J.; Senra, C.; Viegas, R.; Llosa, G. |
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Title |
Gamma-ray sources imaging and test-beam results with MACACO III Compton camera |
Type |
Journal Article |
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Year |
2024 |
Publication |
Physica Medica |
Abbreviated Journal |
Phys. Medica |
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Volume |
117 |
Issue  |
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Pages |
103199 - 10pp |
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Keywords |
Hadron therapy; Compton camera; Scintillator crystals; Silicon photomultipliers |
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Abstract |
Hadron therapy is a radiotherapy modality which offers a precise energy deposition to the tumors and a dose reduction to healthy tissue as compared to conventional methods. However, methods for real-time monitoring are required to ensure that the radiation dose is deposited on the target. The IRIS group of IFIC-Valencia developed a Compton camera prototype for this purpose, intending to image the Prompt Gammas emitted by the tissue during irradiation. The system detectors are composed of Lanthanum (III) bromide scintillator crystals coupled to silicon photomultipliers. After an initial characterization in the laboratory, in order to assess the system capabilities for future experiments in proton therapy centers, different tests were carried out in two facilities: PARTREC (Groningen, The Netherlands) and the CNA cyclotron (Sevilla, Spain). Characterization studies performed at PARTREC indicated that the detectors linearity was improved with respect to the previous version and an energy resolution of 5.2 % FWHM at 511 keV was achieved. Moreover, the imaging capabilities of the system were evaluated with a line source of 68Ge and a point-like source of 241Am-9Be. Images at 4.439 MeV were obtained from irradiation of a graphite target with an 18 MeV proton beam at CNA, to perform a study of the system potential to detect shifts at different intensities. In this sense, the system was able to distinguish 1 mm variations in the target position at different beam current intensities for measurement times of 1800 and 600 s. |
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Address |
[Barrientos, L.; Borja-Lloret, M.; Casana, J. V.; Hueso-Gonzalez, F.; Perez-Curbelo, J.; Ros, A.; Roser, J.; Senra, C.; Viegas, R.; Llosa, G.] CSIC UV, Inst Fis Corpuscular IFIC, Valencia, Spain, Email: Luis.Barrientos@ific.uv.es |
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Publisher |
Elsevier Sci Ltd |
Place of Publication |
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Language |
English |
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Original Title |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
1120-1797 |
ISBN |
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Expedition |
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Conference |
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Notes |
WOS:001145147400001 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
5892 |
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Author |
Bach, E. et al; Bernabeu, J.; Lacasta, C.; Solaz, C.; Soldevila, U. |
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Title |
Analysis of the quality assurance results from the initial part of production of the ATLAS18 ITK strip sensors |
Type |
Journal Article |
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Year |
2024 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
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Volume |
1064 |
Issue |
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Pages |
169435 - 8pp |
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Keywords |
Silicon strip sensors; Parameter analysis |
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Abstract |
The production of strip sensors for the ATLAS Inner Tracker (ITk) started in 2021. Since then, a Quality Assurance (QA) program has been carried out continuously, by using specific test structures, in parallel to the Quality Control (QC) inspection of the sensors. The QA program consists of monitoring sensor-specific characteristics and the technological process variability, before and after the irradiation with gammas, neutrons, and protons. After two years, half of the full production volume has been reached and we present an analysis of the parameters measured as part of the QA process. The main devices used for QA purposes are miniature strip sensors, monitor diodes, and the ATLAS test chip, which contains several test structures. Such devices are tested by several sites across the collaboration depending on the type of samples (non-irradiated components or irradiated with protons, neutrons, or gammas). The parameters extracted from the tests are then uploaded to a database and analyzed by Python scripts. These parameters are mainly examined through histograms and timeevolution plots to obtain parameter distributions, production trends, and meaningful parameter-to-parameter correlations. The purpose of this analysis is to identify possible deviations in the fabrication or the sensor quality, changes in the behavior of the test equipment at different test sites, or possible variability in the irradiation processes. The conclusions extracted from the QA program have allowed test optimization, establishment of control limits for the parameters, and a better understanding of device properties and fabrication trends. In addition, any abnormal results prompt immediate feedback to a vendor. |
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Address |
[Bach, E.; Bhardwaj, A.; Crick, B.; Ullan, M.] CSIC, Inst Microelect Barcelona IMB CNM, Campus UAB Bellaterra, Barcelona 08193, Spain, Email: eric.bach@imb-cnm.csic.es |
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Publisher |
Elsevier |
Place of Publication |
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Language |
English |
Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0168-9002 |
ISBN |
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Area |
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Expedition |
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Conference |
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Notes |
WOS:001252172700001 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
6163 |
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Author |
Andricek, L. et al; Lacasta, C.; Marinas, C.; Vos, M. |
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Title |
Intrinsic resolutions of DEPFET detector prototypes measured at beam tests |
Type |
Journal Article |
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Year |
2011 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
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Volume |
638 |
Issue |
1 |
Pages |
24-32 |
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Keywords |
Silicon pixel detector; Detector resolution; Spatial resolution; DEPFET; Beam test |
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Abstract |
The paper is based on the data of the 2009 DEPFET beam test at CERN SPS. The beam test used beams of pions and electrons with energies between 40 and 120 GeV, and the sensors tested were prototypes with thickness of 450 μm and pixel pitch between 20 and 32 μm. Intrinsic resolutions of the detectors are calculated by disentangling the contributions of measurement errors and multiple scattering in tracking residuals. Properties of the intrinsic resolution estimates and factors that influence them are discussed. For the DEPFET detectors in the beam test, the calculation yields intrinsic resolutions of approximate to 1 μm, with a typical accuracy of 0.1 μm. Bias scan, angle scan, and energy scan are used as example studies to show that the intrinsic resolutions are a useful tool in studies of detector properties. With sufficiently precise telescopes, detailed resolution maps can be constructed and used to study and optimize detector performance. |
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Address |
[Dolezal, Z.; Drasal, Z.; Kodys, P.; Kvasnicka, P.; Malina, L.; Scheirich, J.] Charles Univ Prague, Fac Math & Phys, Inst Particle & Nucl Phys, CR-18000 Prague, Czech Republic, Email: peter.kodys@mff.cuni.cz |
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Corporate Author |
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Publisher |
Elsevier Science Bv |
Place of Publication |
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Language |
English |
Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0168-9002 |
ISBN |
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Medium |
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Area |
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Expedition |
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Conference |
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Notes |
ISI:000290082600005 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
618 |
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Author |
Affolder, A. et al; Garcia, C.; Lacasta, C.; Marco, R.; Marti-Garcia, S.; Miñano, M.; Soldevila, U. |
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Title |
Silicon detectors for the sLHC |
Type |
Journal Article |
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Year |
2011 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
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Volume |
658 |
Issue |
1 |
Pages |
11-16 |
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Keywords |
Silicon particle detectors; Radiation damage; Irradiation; Charge collection efficiency |
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Abstract |
In current particle physics experiments, silicon strip detectors are widely used as part of the inner tracking layers. A foreseeable large-scale application for such detectors consists of the luminosity upgrade of the Large Hadron Collider (LHC), the super-LHC or sLHC, where silicon detectors with extreme radiation hardness are required. The mission statement of the CERN RD50 Collaboration is the development of radiation-hard semiconductor devices for very high luminosity colliders. As a consequence, the aim of the R&D programme presented in this article is to develop silicon particle detectors able to operate at sLHC conditions. Research has progressed in different areas, such as defect characterisation, defect engineering and full detector systems. Recent results from these areas will be presented. This includes in particular an improved understanding of the macroscopic changes of the effective doping concentration based on identification of the individual microscopic defects, results from irradiation with a mix of different particle types as expected for the sLHC, and the observation of charge multiplication effects in heavily irradiated detectors at very high bias voltages. |
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Address |
[Barber, T.; Breindl, M.; Driewer, A.; Koehler, M.; Kuehn, S.; Parzefall, U.; Preiss, J.; Walz, M.; Wiik, L.] Univ Freiburg, Inst Phys, D-79104 Freiburg, Germany, Email: Ulrich.Parzefall@physik.uni-freiburg.de |
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Corporate Author |
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Publisher |
Elsevier Science Bv |
Place of Publication |
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Editor |
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Language |
English |
Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0168-9002 |
ISBN |
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Medium |
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Area |
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Expedition |
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Conference |
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Notes |
WOS:000297783300004 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
836 |
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Author |
Boronat, M.; Marinas, C.; Frey, A.; Garcia, I.; Schwenker, B.; Vos, M.; Wilk, F. |
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Title |
Physical Limitations to the Spatial Resolution of Solid-State Detectors |
Type |
Journal Article |
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Year |
2015 |
Publication |
IEEE Transactions on Nuclear Science |
Abbreviated Journal |
IEEE Trans. Nucl. Sci. |
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Volume |
62 |
Issue |
1 |
Pages |
381-386 |
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Keywords |
Charged particle tracking; silicon detectors; solid state devices |
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Abstract |
In this paper we explore the effect of delta-ray emission and fluctuations in the signal deposition on the detection of charged particles in silicon-based detectors. We show that these two effects ultimately limit the resolution that can be achieved by interpolation of the signal in finely segmented position-sensitive solid-state devices. |
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Address |
[Boronat, M.; Garcia, I.; Vos, M.] IFIC UVEG CSIC, E-46980 Valencia, Spain, Email: marcel.vos@ific.uv.es |
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Corporate Author |
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Thesis |
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Publisher |
Ieee-Inst Electrical Electronics Engineers Inc |
Place of Publication |
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Editor |
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Language |
English |
Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0018-9499 |
ISBN |
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Medium |
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Area |
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Expedition |
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Conference |
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Notes |
WOS:000349672900025 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
2140 |
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