NEXT Collaboration(Monrabal, F. et al), Laing, A., Alvarez, V., Benlloch-Rodriguez, J. M., Carcel, S., Carrion, J. V., et al. (2018). The NEXT White (NEW) detector. J. Instrum., 13, P12010–38pp.
Abstract: Conceived to host 5 kg of xenon at a pressure of 15 bar in the fiducial volume, the NEXT-White apparatus is currently the largest high pressure xenon gas TPC using electroluminescent amplification in the world. It is also a 1:2 scale model of the NEXT-100 detector for Xe-136 beta beta 0 nu decay searches, scheduled to start operations in 2019. Both detectors measure the energy of the event using a plane of photomultipliers located behind a transparent cathode. They can also reconstruct the trajectories of charged tracks in the dense gas of the TPC with the help of a plane of silicon photomultipliers located behind the anode. A sophisticated gas system, common to both detectors, allows the high gas purity needed to guarantee a long electron lifetime. NEXT-White has been operating since October 2016 at the Laboratorio Subterraneo de Canfranc (LSC), in Spain. This paper describes the detector and associated infrastructures, as well as the main aspects of its initial operation.
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Poley, L., Blue, A., Bloch, I., Buttar, C., Fadeyev, V., Fernandez-Tejero, J., et al. (2019). Mapping the depleted area of silicon diodes using a micro-focused X-ray beam. J. Instrum., 14, P03024–14pp.
Abstract: For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker (ITk). The ITk will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of 500V to maintain a low noise and power dissipation. In order to minimise sensor leakage currents, particularly in the high-radiation environment inside the ATLAS detector, sensors are foreseen to be operated at low temperatures and to be manufactured from wafers with a high bulk resistivity of several k Omega.cm. Simulations showed the electric field inside sensors with high bulk resistivity to extend towards the sensor edge, which could lead to increased surface currents for narrow dicing edges. In order to map the electric field inside biased silicon sensors with high bulk resistivity, three diodes from ATLAS silicon strip sensor prototype wafers were studied with a monochromatic, micro-focused X-ray beam at the Diamond Light Source (Didcot, U.K.). For all devices under investigation, the electric field inside the diode was mapped and its dependence on the applied bias voltage was studied.
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ATLAS Collaboration(Aaboud, M. et al), Alvarez Piqueras, D., Aparisi Pozo, J. A., Bailey, A. J., Barranco Navarro, L., Cabrera Urban, S., et al. (2019). Modelling radiation damage to pixel sensors in the ATLAS detector. J. Instrum., 14, P06012–52pp.
Abstract: Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 10(15) 1 MeV n(eq)/cm(2), while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (<= 10(15) 1 MeV n(eq)/cm(2)).
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Fernandez, A., Hufschmidt, D., Colaux, J. L., Valiente-Dobon, J. J., Godinho, V., Jimenez de Haro, M. C., et al. (2020). Low gas consumption fabrication of He-3 solid targets for nuclear reactions. Mater. Des., 186, 108337–10pp.
Abstract: Nanoporous solids that stabilize trapped gas nanobubbles open new possibilities to fabricate solid targets for nuclear reactions. A methodology is described based on the magnetron sputtering (MS) technique operated under quasistatic flux conditions to produce such nanocomposites films with He-3 contents of up to 16 at.% in an amorphous-silicon matrix. In addition to the characteristic low pressure (3-6 Pa) needed for the gas discharge, the method ensures almost complete reduction of the process gas flow during film fabrication. The method could produce similar materials to those obtained under classical dynamic flux conditions for MS. The drastic reduction (>99.5%) of the gas consumption is fundamental for the fabrication of targets with scarce and expensive gases. Si:He-3 and W:He-3 targets are presented together with their microstructural (scanning and transmission electron microscopy, SEM and TEM respectively) and compositional (Ion Beam Analysis, IBA) characterization. The He-3 content achieved was over 1 x 10(18) at/cm(2) for film thicknesses between 1.5 and 3 μm for both Si and W matrices. First experiments to probe the stability of the targets for nuclear reaction studies in inverse kinematics configurations are presented.
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Boronat, M., Marinas, C., Frey, A., Garcia, I., Schwenker, B., Vos, M., et al. (2015). Physical Limitations to the Spatial Resolution of Solid-State Detectors. IEEE Trans. Nucl. Sci., 62(1), 381–386.
Abstract: In this paper we explore the effect of delta-ray emission and fluctuations in the signal deposition on the detection of charged particles in silicon-based detectors. We show that these two effects ultimately limit the resolution that can be achieved by interpolation of the signal in finely segmented position-sensitive solid-state devices.
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