Barrientos, L., Borja-Lloret, M., Etxebeste, A., Muñoz, E., Oliver, J. F., Ros, A., et al. (2021). Performance evaluation of MACACO II Compton camera. Nucl. Instrum. Methods Phys. Res. A, 1014, 165702–7pp.
Abstract: The IRIS group at IFIC-Valencia has developed a second version of a Compton camera prototype for hadron therapy treatment monitoring, with the aim of improving the performance with respect to its predecessor. The system is composed of three Lanthanum (III) bromide (LaBr3) crystals coupled to silicon photomultipliers (SiPMs). The detector energy resolution has been improved to 5.6% FWHM at 511 keV and an angular resolution of 8.0 degrees has been obtained. Images of a Na-22 point-like source have been reconstructed selecting two and three interaction events. Moreover, the experimental data have been reproduced with Monte Carlo simulations using a Compton camera module (CCMod) in GATE v8.2 obtaining a good correlation.
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Goasduff, A. et al, & Gadea, A. (2021). The GALILEO gamma-ray array at the Legnaro National Laboratories. Nucl. Instrum. Methods Phys. Res. A, 1015, 165753–15pp.
Abstract: GALILEO, a new 4 pi high-resolution gamma-detection array, based on HPGe detectors, has been developed and installed at the Legnaro National Laboratories. The GALILEO array greatly benefits from a fully-digital readout chain, customized DAQ, and a variety of complementary detectors to improve the resolving power by the detection of particles, ions or high-energy gamma-ray transitions. In this work, a full description of the array, including electronics and DAQ, is presented together with its complementary instrumentation.
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Viegas, R., Roser, J., Barrientos, L., Borja-Lloret, M., Casaña, J. V., Lopez, J. G., et al. (2023). Characterization of a Compton camera based on the TOFPET2 ASIC. Radiat. Phys. Chem., 202, 110507–11pp.
Abstract: The use of Compton cameras for medical imaging and its interest as a hadron therapy treatment monitoring has increased in the last decade with the development of silicon photomultipliers. MACACOp is a Compton camera prototype designed and assembled at the IRIS group of IFIC-Valencia. This Compton camera is based on monolithic Lanthanum (III) Bromide crystals and silicon photomultipliers, and employs the novel TOFPET2 ASIC as readout electronics. This system emerged as an alternative to MACACO II prototype, with the aim of improving its limited time resolution. To test the performance of the ASIC in a Compton camera setup, the prototype was characterized, both in laboratory and in-beam. A time resolution of 1.5 ns was obtained after time corrections, which improves greatly the performance of the MACACO II. Moreover, the results obtained at high photon energies demonstrate the ability of the system to obtain 1 mm displacements of the reconstructed spots. The results reinforce the potential of the system as a monitoring device for hadron therapy.
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Barrientos, L., Borja-Lloret, M., Casana, J. V., Hueso-Gonzalez, F., Ros, A., Roser, J., et al. (2023). System characterization and performance studies with MACACO III Compton camera. Radiat. Phys. Chem., 208, 110922–13pp.
Abstract: The IRIS group of IFIC-Valencia has developed a Compton camera prototype. The system detectors are made of Lanthanum (III) bromide scintillator crystals coupled to silicon photomultipliers. Two models of silicon photomultipliers arrays with different micro pixel pitch (25 and 50 μm) have been chosen as possible candidates to improve the response of the new system. Characterization studies with a 22Na point-like source have indicated that the 25 μm photodetector provided better performance in terms of energy resolution (5.2% FWHM at 511 keV) and angular resolution (6.9 degrees FWHM at 1275 keV), and more stability with temperature variations. In addition, MACACO III imaging capabilities have been assessed using a structure composed of thirty-seven 22Na point-like sources. Furthermore, in order to evaluate possible ways of improving the system performance, several studies have been carried out by means of simulations both in realistic and performance improved conditions. In this work, the system performance is evaluated for its future application in different areas.
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Latonova, V. et al, Bernabeu, J., Lacasta, C., Solaz, C., & Soldevila, U. (2023). Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation. Nucl. Instrum. Methods Phys. Res. A, 1050, 168119–5pp.
Abstract: The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb(-1) means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 center dot 10(15) MeVn(eq)/cm(2) and 0.66MGy, respectively, including a safety factor of 1.5. Radiation hard n(+)-in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n(+) implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. We discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips.
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