NEXT Collaboration(Monrabal, F. et al), Laing, A., Alvarez, V., Benlloch-Rodriguez, J. M., Carcel, S., Carrion, J. V., et al. (2018). The NEXT White (NEW) detector. J. Instrum., 13, P12010–38pp.
Abstract: Conceived to host 5 kg of xenon at a pressure of 15 bar in the fiducial volume, the NEXT-White apparatus is currently the largest high pressure xenon gas TPC using electroluminescent amplification in the world. It is also a 1:2 scale model of the NEXT-100 detector for Xe-136 beta beta 0 nu decay searches, scheduled to start operations in 2019. Both detectors measure the energy of the event using a plane of photomultipliers located behind a transparent cathode. They can also reconstruct the trajectories of charged tracks in the dense gas of the TPC with the help of a plane of silicon photomultipliers located behind the anode. A sophisticated gas system, common to both detectors, allows the high gas purity needed to guarantee a long electron lifetime. NEXT-White has been operating since October 2016 at the Laboratorio Subterraneo de Canfranc (LSC), in Spain. This paper describes the detector and associated infrastructures, as well as the main aspects of its initial operation.
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Poley, L., Blue, A., Bloch, I., Buttar, C., Fadeyev, V., Fernandez-Tejero, J., et al. (2019). Mapping the depleted area of silicon diodes using a micro-focused X-ray beam. J. Instrum., 14, P03024–14pp.
Abstract: For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker (ITk). The ITk will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of 500V to maintain a low noise and power dissipation. In order to minimise sensor leakage currents, particularly in the high-radiation environment inside the ATLAS detector, sensors are foreseen to be operated at low temperatures and to be manufactured from wafers with a high bulk resistivity of several k Omega.cm. Simulations showed the electric field inside sensors with high bulk resistivity to extend towards the sensor edge, which could lead to increased surface currents for narrow dicing edges. In order to map the electric field inside biased silicon sensors with high bulk resistivity, three diodes from ATLAS silicon strip sensor prototype wafers were studied with a monochromatic, micro-focused X-ray beam at the Diamond Light Source (Didcot, U.K.). For all devices under investigation, the electric field inside the diode was mapped and its dependence on the applied bias voltage was studied.
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ATLAS Collaboration(Aaboud, M. et al), Alvarez Piqueras, D., Aparisi Pozo, J. A., Bailey, A. J., Barranco Navarro, L., Cabrera Urban, S., et al. (2019). Modelling radiation damage to pixel sensors in the ATLAS detector. J. Instrum., 14, P06012–52pp.
Abstract: Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 10(15) 1 MeV n(eq)/cm(2), while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (<= 10(15) 1 MeV n(eq)/cm(2)).
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Loya Villalpando, A. A., Martin-Albo, J., Chen, W. T., Guenette, R., Lego, C., Park, J. S., et al. (2020). Improving the light collection efficiency of silicon photomultipliers through the use of metalenses. J. Instrum., 15(11), P11021–13pp.
Abstract: Metalenses are optical devices that implement nanostructures as phase shifters to focus incident light. Their compactness and simple fabrication make them a potential cost-effective solution for increasing light collection efficiency in particle detectors with limited photosensitive area coverage. Here we report on the characterization and performance of metalenses in increasing the light collection efficiency of silicon photomultipliers (SiPM) of various sizes using an LED of 630 nm, and find a six to seven-fold increase in signal for a 1.3 x 1 3 mm(2) SiPM when coupled with a 10-mm-diameter metalens manufactured using deep ultraviolet stepper lithography. Such improvements could be valuable for future generations of particle detectors, particularly those employed in rare-event searches such as dark matter and neutrinoless double beta decay.
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ATLAS Collaboration(Aad, G. et al), Aparisi Pozo, J. A., Bailey, A. J., Cabrera Urban, S., Cardillo, F., Castillo, F. L., et al. (2021). Measurements of sensor radiation damage in the ATLAS inner detector using leakage currents. J. Instrum., 16(8), P08025–46pp.
Abstract: Non-ionizing energy loss causes bulk damage to the silicon sensors of the ATLAS pixel and strip detectors. This damage has important implications for data-taking operations, charged-particle track reconstruction, detector simulations, and physics analysis. This paper presents simulations and measurements of the leakage current in the ATLAS pixel detector and semiconductor tracker as a function of location in the detector and time, using data collected in Run 1 (2010-2012) and Run 2 (2015-2018) of the Large Hadron Collider. The extracted fluence shows a much stronger vertical bar z vertical bar-dependence in the innermost layers than is seen in simulation. Furthermore, the overall fluence on the second innermost layer is significantly higher than in simulation, with better agreement in layers at higher radii. These measurements are important for validating the simulation models and can be used in part to justify safety factors for future detector designs and interventions.
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