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Author |
Unno, Y. et al; Garcia, C.; Jimenez, J.; Lacasta, C.; Marti-Garcia, S.; Soldevila, U. |
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Title |
Development of n(+) -in-p large-area silicon microstrip sensors for very high radiation environments-ATLAS12 design and initial results |
Type |
Journal Article |
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Year |
2014 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
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Volume |
765 |
Issue |
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Pages |
80-90 |
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Keywords |
Silicon strip; n(+)-in-p; P-type; Radiation-tolerant; HL-LHC; PTP |
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Abstract |
We have been developing a novel radiation tolerant n(+)-in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float zone wafers, where large area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 pm and slim edge space of 450 pm, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers. |
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Address |
[Edwards, S. O.; Pyatt, S.; Thomas, J. P.; Wilson, J. A.] Univ Birmingham, Sch Phys & Astron, Birmingham B15 2TT, W Midlands, England, Email: yoshinobu.unno@kek.jp |
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Publisher |
Elsevier Science Bv |
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English |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN  |
0168-9002 |
ISBN |
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Medium |
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Area |
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Expedition |
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Conference |
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Notes |
WOS:000344621000016 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
2002 |
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Author |
Ullan, M.; Benitez, V.; Quirion, D.; Zabala, M.; Pellegrini, G.; Lozano, M.; Lacasta, C.; Soldevila, U.; Garcia, C.; Fadeyev, V.; Wortman, J.; DeFilippis, J.; Shumko, M.; Grillo, A.A.; Sadrozinski, H.F.W. |
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Title |
Low-resistance strip sensors for beam-loss event protection |
Type |
Journal Article |
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Year |
2014 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
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Volume |
765 |
Issue |
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Pages |
252-257 |
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Keywords |
Silicon radiation detectors; Strip sensors; Punch through protection; Beam loss; HL-LHC; ATLAS Upgrade |
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Abstract |
AC coupled silicon strip sensors can be damaged in case of a beam loss due to the possibility of a large charge accumulation in the bulk, developing very high voltages across the coupling capacitors which can destroy them. Punch-through structures are currently used to avoid this problem helping to evacuate the accumulated charge as large voltages are developing. Nevertheless, previous experiments, performed with laser pulses, have shown that these structures can become ineffective in relatively long strips. The large value of the implant resistance can effectively isolate the “far” end of the strip from the punchthrough structure leading to large voltages. We present here our developments to fabricate lowresistance strip sensors to avoid this problem. The deposition of a conducting material in contact with the implants drastically reduces the strip resistance, assuring the effectiveness of the punch-through structures. First devices have been fabricated with this new technology. Initial results with laser tests show the expected reduction in peak voltages on the low resistivity implants. Other aspects of the sensor performance, including the signal formation, are not affected by the new technology. |
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Address |
[Ullan, M.; Benitez, V.; Quirion, D.; Zabala, M.; Pellegrini, G.; Lozano, M.] CSIC, Ctr Nacl Microelect IMB CNM, Barcelona 08193, Spain, Email: Miguel.Ullan@imb-cnm.csic.es |
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Corporate Author |
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Publisher |
Elsevier Science Bv |
Place of Publication |
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English |
Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0168-9002 |
ISBN |
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Medium |
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Area |
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Expedition |
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Conference |
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Notes |
WOS:000344621000048 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
2003 |
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Author |
Benitez, V. et al; Bernabeu, J.; Garcia, C.; Lacasta, C.; Marco, R.; Rodriguez, D.; Santoyo, D.; Solaz, C.; Soldevila, U. |
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Title |
Sensors for the End-cap prototype of the Inner Tracker in the ATLAS Detector Upgrade |
Type |
Journal Article |
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Year |
2016 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
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Volume |
833 |
Issue |
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Pages |
226-232 |
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Keywords |
Silicon radiation detectors; Strip sensors; HL-LHC; ATLAS Upgrade; Inner Tracker (ITk); End-cap |
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Abstract |
The new silicon microstrip sensors of the End-cap part of the HL-LHC ATLAS Inner Tracker (ITk) present a number of challenges due to their complex design features such as the multiple different sensor shapes, the varying strip pitch, or the built-In stereo angle. In order to investigate these specific problems, the “petalet” prototype was defined as a small End-cap prototype. The sensors for the petalet prototype include several new layout and technological solutions to investigate the issues, they have been tested in detail by the collaboration. The sensor description and detailed test results are presented in this paper. New software tools have been developed for the automatic layout generation of the complex designs. The sensors have been fabricated, characterized and delivered to the institutes in the collaboration for their assembly on petalet prototypes. This paper describes the lessons learnt from the design and tests of the new solutions implemented on these sensors, which are being used for the full petal sensor development. This has resulted in the ITIc strip, community acquiring the necessary expertise to develop the full End-cap structure, the petal. |
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Address |
[Benitez, V.; Ullan, M.; Quirion, D.; Pellegrini, G.; Fleta, C.; Lozano, M.] CSIC, CNM, IMB, Campus Univ Bellaterra, Barcelona 08193, Spain, Email: miguel.ullan@imb-cnm.csic.es |
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Corporate Author |
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Publisher |
Elsevier Science Bv |
Place of Publication |
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Language |
English |
Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0168-9002 |
ISBN |
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Medium |
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Area |
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Expedition |
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Conference |
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Notes |
WOS:000383818200032 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
2816 |
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Author |
Fernandez-Tejero, J. et al; Soldevila, U. |
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Title |
Humidity sensitivity of large area silicon sensors: Study and implications |
Type |
Journal Article |
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Year |
2020 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
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Volume |
978 |
Issue |
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Pages |
164406 - 6pp |
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Keywords |
Humidity sensitivity; Large area silicon sensors; Slim-edge; HL-LHC |
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Abstract |
The production of large area sensors is one of the main challenges that the ATLAS collaboration faces for the new Inner-Tracker full-silicon detector. During the prototype fabrication phase for the High Luminosity Large Hadron Collider upgrade, several ATLAS institutes observed indications of humidity sensitivity of large area sensors, even at relative humidities well below the dew point. Specifically, prototype Barrel and End-Cap silicon strip sensors fabricated in 6-inch wafers manifest a prompt decrease of the breakdown voltage when operating under high relative humidity, adversely affecting the performance of the sensors. In addition to the investigation of these prototype sensors, a specific fabrication batch with special passivation is also studied, allowing for a deeper understanding of the responsible mechanisms. This work presents an extensive study of this behaviour on large area sensors. The locations of the hotspots at the breakdown voltage at high humidity are revealed using different infrared thermography techniques. Several palliative treatments are attempted, proving the influence of sensor cleaning methods, as well as baking, on the device performance, but no improvement on the humidity sensitivity was achieved. Furthermore, a study of the incidence of the sensitivity in different batches is also presented, introducing a hypothesis of the origins of the humidity sensitivity associated to the sensor edge design, together with passivation thickness and conformity. Several actions to be taken during sensor production and assembly are extracted from this study, in order to minimize the impact of humidity sensitivity on the performance of large area silicon sensors for High Energy Physics experiments. |
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Address |
[Fernandez-Tejero, J.; Avino, O.; Fleta, C.; Ullan, M.; Vellvehi, M.] CSIC, Ctr Nacl Microelect IMB CNM, Campus UAB Bellaterra, Barcelona 08193, Spain, Email: Xavi.Fdez@cern.ch |
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Publisher |
Elsevier |
Place of Publication |
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Language |
English |
Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0168-9002 |
ISBN |
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Medium |
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Area |
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Expedition |
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Conference |
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Notes |
WOS:000560076700009 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
4504 |
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| Permanent link to this record |
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Author |
Fernandez-Tejero, J.; Bartl, U.; Docke, M.; Fadeyev, V.; Fleta, C.; Hacker, J.; Hommels, B.; Lacasta, C.; Parzefall, U.; Soldevila, U.; Stocker, G.; Ullan, M.; Unno, Y. |
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Title |
Design and evaluation of large area strip sensor prototypes for the ATLAS Inner Tracker detector |
Type |
Journal Article |
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Year |
2020 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
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Volume |
981 |
Issue |
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Pages |
164536 - 6pp |
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Keywords |
ATLAS; Silicon strip sensors; Large area silicon sensors; Layout design; Prototype evaluation; Market survey |
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Abstract |
The ATLAS community is facing the last stages prior to the production of the upgraded silicon strip Inner Tracker for the High-Luminosity Large Hadron Collider. An extensive Market Survey was carried out in order to evaluate the capability of different foundries to fabricate large area silicon strip sensors, satisfying the ATLAS specifications. The semiconductor manufacturing company, Infineon Technologies AG, was one of the two foundries, along with Hamamatsu Photonics K.K., that reached the last stage of the evaluation for the production of the new devices. The full prototype wafer layout for the participation of Infineon, called ATLAS17LS-IFX, was designed using a newly developed Python-based Automatic Layout Generation Tool, able to rapidly design sensors with different characteristics and dimensions based on a few geometrical and technological input parameters. This work presents the layout design process and the results obtained from the evaluation of the new Infineon large area sensors before and after proton and neutron irradiations, up to fluences expected in the inner layers of the future ATLAS detector. |
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Address |
[Fernandez-Tejero, J.; Fleta, C.; Ullan, M.] CSIC, Ctr Nacl Microelect IMB CNM, Campus UAB Bellaterra, Barcelona 08193, Spain, Email: Xavi.Fdez@cern.ch |
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Corporate Author |
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Thesis |
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Publisher |
Elsevier |
Place of Publication |
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Editor |
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Language |
English |
Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0168-9002 |
ISBN |
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Medium |
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Area |
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Expedition |
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Conference |
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Notes |
WOS:000581799800023 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
4579 |
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| Permanent link to this record |
