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Author Muñoz, E.; Barrio, J.; Etxebeste, A.; Ortega, P.G.; Lacasta, C.; Oliver, J.F.; Solaz, C.; Llosa, G. doi  openurl
  Title Performance evaluation of MACACO: a multilayer Compton camera Type Journal Article
  Year 2017 Publication Physics in Medicine and Biology Abbreviated Journal Phys. Med. Biol.  
  Volume 62 Issue 18 Pages 7321-7341  
  Keywords Compton imaging; Compton camera; continuous LaBr3 crystal; silicon photomultiplier; hadron therapy  
  Abstract Compton imaging devices have been proposed and studied for a wide range of applications. We have developed a Compton camera prototype which can be operated with two or three detector layers based on monolithic lanthanum bromide (LaBr3) crystals coupled to silicon photomultipliers (SiPMs), to be used for proton range verification in hadron therapy. In this work, we present the results obtained with our prototype in laboratory tests with radioactive sources and in simulation studies. Images of a Na-22 and an Y-88 radioactive sources have been successfully reconstructed. The full width half maximum of the reconstructed images is below 4 mm for a Na-22 source at a distance of 5 cm.  
  Address [Munoz, Enrique; Barrio, John; Etxebeste, Ane; Ortega, Pablo G.; Lacasta, Carlos; Oliver, Josep F.; Solaz, Carles; Llosa, Gabriela] Univ Valencia, CSIC, Inst Fis Corpuscular, Valencia, Spain, Email: Enrique.Munoz@ific.uv.es  
  Corporate Author Thesis  
  Publisher Iop Publishing Ltd Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0031-9155 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000408229900003 Approved no  
  Is ISI yes International Collaboration (up) yes  
  Call Number IFIC @ pastor @ Serial 3253  
Permanent link to this record
 

 
Author Capra, S.; Mengoni, D.; Dueñas, J.A.; John, P.R.; Gadea, A.; Aliaga, R.J.; Dormard, J.J.; Assie, M.; Pullia, A. doi  openurl
  Title Performance of the new integrated front-end electronics of the TRACE array commissioned with an early silicon detector prototype Type Journal Article
  Year 2019 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 935 Issue Pages 178-184  
  Keywords ASIC; Charge-sensitive preamplifier; Low-noise applications; Particle spectrometry; Dead time; Silicon detector  
  Abstract The spectroscopic performances of the new integrated ASIC (Application-Specific Integrated Circuit) preamplifiers for highly segmented silicon detectors have been evaluated with an early silicon detector prototype of the TRacking Array for light Charged Ejectiles (TRACE). The ASICS were mounted on a custom-designed PCB (Printed Circuit Board) and the detector plugged on it. Energy resolution tests, performed on the same detector before and after irradiation, yielded a resolution of 21 keV and 33 keV FWHM respectively. The output signals were acquired with an array of commercial 100-MHz 14-bit digitizers. The preamplifier chip is equipped with an innovative Fast-Reset device that has two functions: it reduces dramatically the dead time of the preamplifier in case of saturation (from milliseconds to microseconds) and extends the spectroscopic dynamic range of the preamplifier by more than one order of magnitude. Other key points of the device are the low noise and the wide bandwidth.  
  Address [Capra, S.; Pullia, A.] Univ Milan, Dipartimento Fis, Via Celoria 16, IT-20133 Milan, Italy, Email: stefano.capra@unimi.it  
  Corporate Author Thesis  
  Publisher Elsevier Science Bv Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000470063800026 Approved no  
  Is ISI yes International Collaboration (up) yes  
  Call Number IFIC @ pastor @ Serial 4042  
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Author Fernandez-Tejero, J. et al; Soldevila, U. doi  openurl
  Title Humidity sensitivity of large area silicon sensors: Study and implications Type Journal Article
  Year 2020 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 978 Issue Pages 164406 - 6pp  
  Keywords Humidity sensitivity; Large area silicon sensors; Slim-edge; HL-LHC  
  Abstract The production of large area sensors is one of the main challenges that the ATLAS collaboration faces for the new Inner-Tracker full-silicon detector. During the prototype fabrication phase for the High Luminosity Large Hadron Collider upgrade, several ATLAS institutes observed indications of humidity sensitivity of large area sensors, even at relative humidities well below the dew point. Specifically, prototype Barrel and End-Cap silicon strip sensors fabricated in 6-inch wafers manifest a prompt decrease of the breakdown voltage when operating under high relative humidity, adversely affecting the performance of the sensors. In addition to the investigation of these prototype sensors, a specific fabrication batch with special passivation is also studied, allowing for a deeper understanding of the responsible mechanisms. This work presents an extensive study of this behaviour on large area sensors. The locations of the hotspots at the breakdown voltage at high humidity are revealed using different infrared thermography techniques. Several palliative treatments are attempted, proving the influence of sensor cleaning methods, as well as baking, on the device performance, but no improvement on the humidity sensitivity was achieved. Furthermore, a study of the incidence of the sensitivity in different batches is also presented, introducing a hypothesis of the origins of the humidity sensitivity associated to the sensor edge design, together with passivation thickness and conformity. Several actions to be taken during sensor production and assembly are extracted from this study, in order to minimize the impact of humidity sensitivity on the performance of large area silicon sensors for High Energy Physics experiments.  
  Address [Fernandez-Tejero, J.; Avino, O.; Fleta, C.; Ullan, M.; Vellvehi, M.] CSIC, Ctr Nacl Microelect IMB CNM, Campus UAB Bellaterra, Barcelona 08193, Spain, Email: Xavi.Fdez@cern.ch  
  Corporate Author Thesis  
  Publisher Elsevier Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000560076700009 Approved no  
  Is ISI yes International Collaboration (up) yes  
  Call Number IFIC @ pastor @ Serial 4504  
Permanent link to this record
 

 
Author Helling, C. et al; Bernabeu, J.; Lacasta, C.; Solaz, C. doi  openurl
  Title Strip sensor performance in prototype modules built for ATLAS ITk Type Journal Article
  Year 2020 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 978 Issue Pages 164402 - 6pp  
  Keywords Silicon strip sensors; Strip module; Inter-strip isolation; Readout noise  
  Abstract ATLAS experiment is preparing an upgrade of its detector for High-Luminosity LHC (HL-LHC) operation. The upgrade involves installation of the new all-silicon Inner Tracker (ITk). In the context of the ITk preparations, more than 80 strip modules were built with prototype barrel sensors. They were tested with electrical readout on a per-channel basis. In general, an excellent performance was observed, consistent with previous ASIC-level and sensor-level tests. However, the lessons learned included two phenomena important for the future phases of the project. First was the need to store and test the modules in a dry environment due to humidity sensitivity of the sensors. The second was an observation of high noise regions for 2 modules. The high noise regions were tested further in several ways, including monitoring the performance as a function of time and bias voltage. Additionally, direct sensor-level tests were performed on the affected channels. The inter-strip resistance and bias resistance tests showed low values, indicating a temporary loss of the inter-strip isolation. A subsequent recovery of the noise performance was observed. We present the test details, an analysis of how the inter-strip isolation affects the module noise, and the relationship with sensor-level quality control tests.  
  Address [Helling, C.; Affolder, A. A.; Fadeyev, V.; Galloway, Z.; Gignac, M.; Gunnell, J.; Martinez-Mckinney, F.; Kang, N.; Yarwick, J.] Univ Calif Santa Cruz, Santa Cruz Inst Particle Phys, Santa Cruz, CA 95064 USA, Email: fadeyev@ucsc.edu  
  Corporate Author Thesis  
  Publisher Elsevier Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000560076700015 Approved no  
  Is ISI yes International Collaboration (up) yes  
  Call Number IFIC @ pastor @ Serial 4505  
Permanent link to this record
 

 
Author Fernandez-Tejero, J.; Bartl, U.; Docke, M.; Fadeyev, V.; Fleta, C.; Hacker, J.; Hommels, B.; Lacasta, C.; Parzefall, U.; Soldevila, U.; Stocker, G.; Ullan, M.; Unno, Y. doi  openurl
  Title Design and evaluation of large area strip sensor prototypes for the ATLAS Inner Tracker detector Type Journal Article
  Year 2020 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 981 Issue Pages 164536 - 6pp  
  Keywords ATLAS; Silicon strip sensors; Large area silicon sensors; Layout design; Prototype evaluation; Market survey  
  Abstract The ATLAS community is facing the last stages prior to the production of the upgraded silicon strip Inner Tracker for the High-Luminosity Large Hadron Collider. An extensive Market Survey was carried out in order to evaluate the capability of different foundries to fabricate large area silicon strip sensors, satisfying the ATLAS specifications. The semiconductor manufacturing company, Infineon Technologies AG, was one of the two foundries, along with Hamamatsu Photonics K.K., that reached the last stage of the evaluation for the production of the new devices. The full prototype wafer layout for the participation of Infineon, called ATLAS17LS-IFX, was designed using a newly developed Python-based Automatic Layout Generation Tool, able to rapidly design sensors with different characteristics and dimensions based on a few geometrical and technological input parameters. This work presents the layout design process and the results obtained from the evaluation of the new Infineon large area sensors before and after proton and neutron irradiations, up to fluences expected in the inner layers of the future ATLAS detector.  
  Address [Fernandez-Tejero, J.; Fleta, C.; Ullan, M.] CSIC, Ctr Nacl Microelect IMB CNM, Campus UAB Bellaterra, Barcelona 08193, Spain, Email: Xavi.Fdez@cern.ch  
  Corporate Author Thesis  
  Publisher Elsevier Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000581799800023 Approved no  
  Is ISI yes International Collaboration (up) yes  
  Call Number IFIC @ pastor @ Serial 4579  
Permanent link to this record
 

 
Author Balibrea-Correa, J.; Lerendegui-Marco, J.; Calvo, D.; Caballero, L.; Babiano, V.; Ladarescu, I.; Redondo, M.L.; Tain, J.L.; Tolosa, A.; Domingo-Pardo, C.; Calvino, F.; Casanovas, A.; Tarifeño-Saldivia, A.; Alcayne, V.; Cano-Ott, D.; Martinez, T.; Guerrero, C.; Barbagallo, M.; Macina, D.; Bacak, M. doi  openurl
  Title A first prototype of C6D6 total-energy detector with SiPM readout for neutron capture time-of-flight experiments Type Journal Article
  Year 2021 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 985 Issue Pages 164709 - 8pp  
  Keywords Silicon photomultiplier; Radiation detectors; Time-of-flight; Radiative capture; Total energy detector; Pulse-height weighting technique  
  Abstract Low efficiency total-energy detectors (TEDs) are one of the main tools for neutron capture cross section measurements utilizing the time-of-flight (TOF) technique. State-of-the-art TEDs are based on a C6D6 liquid-scintillation cell optically coupled to a fast photomultiplier tube. The large photomultiplier tube represents yet a significant contribution to the so-called neutron sensitivity background, which is one of the most conspicuous sources of uncertainty in this type of experiments. Here we report on the development of a first prototype of a TED based on a silicon-photomultiplier (SiPM) readout, thus resulting in a lightweight and much more compact detector. Apart from the envisaged improvement in neutron sensitivity, the new system uses low voltage (+28 V) and low current supply (-50 mA), which is more practical than the-kV supply required by conventional photomultipliers. One important difficulty hindering the earlier implementation of SiPM readout for this type of detector was the large capacitance for the output signal when all pixels of a SiPM array are summed together. The latter leads to long pulse rise and decay times, which are not suitable for time-of-flight experiments. In this work we demonstrate the feasibility of a Schottky-diode multiplexing readout approach, that allows one to preserve the excellent timing properties of SiPMs, hereby paving the way for their implementation in future neutron TOF experiments.  
  Address [Balibrea-Correa, J.; Lerendegui-Marco, J.; Calvo, D.; Caballero, L.; Babiano, V; Ladarescu, I; Redondo, M. Lopez; Tain, J. L.; Tolosa, A.; Domingo-Pardo, C.] Univ Valencia, Inst Fis Corpuscular, CSIC, Valencia, Spain, Email: dacaldia@ific.uv.es;  
  Corporate Author Thesis  
  Publisher Elsevier Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000592358200019 Approved no  
  Is ISI yes International Collaboration (up) yes  
  Call Number IFIC @ pastor @ Serial 4638  
Permanent link to this record
 

 
Author Barrientos, L.; Borja-Lloret, M.; Etxebeste, A.; Muñoz, E.; Oliver, J.F.; Ros, A.; Roser, J.; Senra, C.; Viegas, R.; Llosa, G. doi  openurl
  Title Performance evaluation of MACACO II Compton camera Type Journal Article
  Year 2021 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 1014 Issue Pages 165702 - 7pp  
  Keywords Compton camera; Hadron therapy; LaBr3; Silicon photomultipliers  
  Abstract The IRIS group at IFIC-Valencia has developed a second version of a Compton camera prototype for hadron therapy treatment monitoring, with the aim of improving the performance with respect to its predecessor. The system is composed of three Lanthanum (III) bromide (LaBr3) crystals coupled to silicon photomultipliers (SiPMs). The detector energy resolution has been improved to 5.6% FWHM at 511 keV and an angular resolution of 8.0 degrees has been obtained. Images of a Na-22 point-like source have been reconstructed selecting two and three interaction events. Moreover, the experimental data have been reproduced with Monte Carlo simulations using a Compton camera module (CCMod) in GATE v8.2 obtaining a good correlation.  
  Address [Barrientos, L.; Borja-Lloret, M.; Munoz, E.; Oliver, J. F.; Ros, A.; Roser, J.; Senra, C.; Viegas, R.; Llosa, G.] Univ Valencia, Inst Fis Corpuscular, CSIC, Valencia, Spain, Email: lbarrien@ific.uv.es  
  Corporate Author Thesis  
  Publisher Elsevier Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000701263400010 Approved no  
  Is ISI yes International Collaboration (up) yes  
  Call Number IFIC @ pastor @ Serial 4976  
Permanent link to this record
 

 
Author Goasduff, A. et al; Gadea, A. doi  openurl
  Title The GALILEO gamma-ray array at the Legnaro National Laboratories Type Journal Article
  Year 2021 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 1015 Issue Pages 165753 - 15pp  
  Keywords High-resolution gamma-ray spectroscopy; HPGe; Silicon; Neutron; Electronics; DAQ  
  Abstract GALILEO, a new 4 pi high-resolution gamma-detection array, based on HPGe detectors, has been developed and installed at the Legnaro National Laboratories. The GALILEO array greatly benefits from a fully-digital readout chain, customized DAQ, and a variety of complementary detectors to improve the resolving power by the detection of particles, ions or high-energy gamma-ray transitions. In this work, a full description of the array, including electronics and DAQ, is presented together with its complementary instrumentation.  
  Address [Goasduff, A.; Valiente-Dobon, J. J.; Barrientos, D.; Biasotto, M.; Brugnara, D.; Cocconi, P.; Cortes, M. L.; de Angelis, G.; Egea, F. J.; Fantinel, S.; Gambalonga, A.; Gottardo, A.; Gozzelino, A.; Gregor, E. T.; Gulmini, M.; Hadynska-Klek, K.; Illana, A.; Jaworski, G.; Napoli, D. R.; Pellumaj, J.; Perez-Vidal, R. M.; Rosso, D.; Siciliano, M.; Toniolo, N.; Volpe, V.; Zanon, I] INFN Lab Nazl Legnaro, Legnaro, Italy, Email: alain.goasduff@lnl.infn.it  
  Corporate Author Thesis  
  Publisher Elsevier Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000717077900015 Approved no  
  Is ISI yes International Collaboration (up) yes  
  Call Number IFIC @ pastor @ Serial 5025  
Permanent link to this record
 

 
Author Briz, J.A.; Nerio, A.N.; Ballesteros, C.; Borge, M.J.G.; Martinez, P.; Perea, A.; Tavora, V.G.; Tengblad, O.; Ciemala, M.; Maj, A.; Olko, P.; Parol, W.; Pedracka, A.; Sowicki, B.; Zieblinski, M.; Nacher, E. url  doi
openurl 
  Title Proton Radiographs Using Position-Sensitive Silicon Detectors and High-Resolution Scintillators Type Journal Article
  Year 2022 Publication IEEE Transactions on Nuclear Science Abbreviated Journal IEEE Trans. Nucl. Sci.  
  Volume 69 Issue 4 Pages 696-702  
  Keywords LaBr3; particle tracking; proton computed tomography (pCT); proton radiograph; proton therapy; scintillation detectors; silicon detectors  
  Abstract Proton therapy is a cancer treatment technique currently in growth since it offers advantages with respect to conventional X-ray and gamma-ray radiotherapy. In particular, better control of the dose deposition allowing to reach higher conformity in the treatments causing less secondary effects. However, in order to take full advantage of its potential, improvements in treatment planning and dose verification are required. A new prototype of proton computed tomography scanner is proposed to design more accurate and precise treatment plans for proton therapy. Our prototype is formed by double-sided silicon strip detectors and scintillators of LaBr3(Ce) with high energy resolution and fast response. Here, the results obtained from an experiment performed using a 100-MeV proton beam are presented. Proton radiographs of polymethyl methacrylate (PMMA) samples of 50-mm thickness with spatial patterns in aluminum were taken. Their properties were studied, including reproduction of the dimensions, spatial resolution, and sensitivity to different materials. Structures of up to 2 mm are well resolved and the sensitivity of the system was enough to distinguish the thicknesses of 10 mm of aluminum or PMMA. The spatial resolution of the images was 0.3 line pairs per mm (MTF-10%). This constitutes the first step to validate the device as a proton radiography scanner.  
  Address [Briz, J. A.; Nerio, A. N.; Ballesteros, C.; Borge, M. J. G.; Martinez, P.; Perea, A.; Tavora, V. G.; Tengblad, O.] Inst Estruct Mat CSIC, Madrid 28006, Spain, Email: jose.briz@csic.es  
  Corporate Author Thesis  
  Publisher Ieee-Inst Electrical Electronics Engineers Inc Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0018-9499 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000803113800017 Approved no  
  Is ISI yes International Collaboration (up) yes  
  Call Number IFIC @ pastor @ Serial 5245  
Permanent link to this record
 

 
Author Latonova, V. et al; Bernabeu, J.; Lacasta, C.; Solaz, C.; Soldevila, U. doi  openurl
  Title Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation Type Journal Article
  Year 2023 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 1050 Issue Pages 168119 - 5pp  
  Keywords HL-LHC; ATLAS ITk; Silicon micro-strip sensor; Polysilicon bias resistor; Testchip  
  Abstract The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb(-1) means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 center dot 10(15) MeVn(eq)/cm(2) and 0.66MGy, respectively, including a safety factor of 1.5. Radiation hard n(+)-in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n(+) implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. We discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips.  
  Address [Latonova, V.; Federicova, P.; Kroll, J.; Kvasnicka, J.; Mikestikova, M.] Acad Sci Czech Republ, Inst Phys, Slovance 2, Prague 8, Czech Republic, Email: vera.latonova@cern.ch  
  Corporate Author Thesis  
  Publisher Elsevier Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:001035405300001 Approved no  
  Is ISI yes International Collaboration (up) yes  
  Call Number IFIC @ pastor @ Serial 5601  
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