Records |
Author |
Latonova, V. et al; Bernabeu, J.; Lacasta, C.; Solaz, C.; Soldevila, U. |
Title |
Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation |
Type |
Journal Article |
Year |
2023 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
Volume |
1050 |
Issue |
|
Pages |
168119 - 5pp |
Keywords |
HL-LHC; ATLAS ITk; Silicon micro-strip sensor; Polysilicon bias resistor; Testchip |
Abstract |
The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb(-1) means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 center dot 10(15) MeVn(eq)/cm(2) and 0.66MGy, respectively, including a safety factor of 1.5. Radiation hard n(+)-in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n(+) implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. We discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips. |
Address |
[Latonova, V.; Federicova, P.; Kroll, J.; Kvasnicka, J.; Mikestikova, M.] Acad Sci Czech Republ, Inst Phys, Slovance 2, Prague 8, Czech Republic, Email: vera.latonova@cern.ch |
Corporate Author |
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Thesis |
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Publisher |
Elsevier |
Place of Publication |
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Editor |
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Language |
English |
Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0168-9002 |
ISBN |
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Medium |
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Area |
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Expedition |
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Conference |
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Notes |
WOS:001035405300001 |
Approved |
no |
Is ISI |
yes |
International Collaboration |
yes |
Call Number |
IFIC @ pastor @ |
Serial |
5601 |
Permanent link to this record |
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Author |
Belle-II DEPFET and PXD Collaboration (Ye, H. et al); Boronat, M.; Esperante, D.; Fuster, J.; Gomis, P.; Lacasta, C.; Vos, M. |
Title |
Commissioning and performance of the Belle II pixel detector |
Type |
Journal Article |
Year |
2021 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
Volume |
987 |
Issue |
|
Pages |
164875 - 5pp |
Keywords |
Belle II; Pixel detector; DEPFET |
Abstract |
The Belle II experiment at the SuperKEKB energy-asymmetric e(+)e(-) collider has completed a series of substantial upgrades and started collecting data in 2019. The experiment is expected to accumulate a data set of 50 ab(-1) to explore new physics beyond the Standard Model at the intensity frontier. The pixel detector (PXD) of Belle II plays a key role in vertex determination. It has been developed using the DEpleted P-channel Field Effect Transistor (DEPFET) technology, which combines low power consumption in the active pixel area and low intrinsic noise with a very small material budget. In this paper, commissioning and performance of the PXD measured with first collision data are presented. |
Address |
[Alonso, O.; Dieguez, A.] Univ Barcelona, C Marti Franques 1, Barcelona 08028, Spain, Email: hua.ye@desy.de |
Corporate Author |
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Thesis |
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Publisher |
Elsevier |
Place of Publication |
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Editor |
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Language |
English |
Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0168-9002 |
ISBN |
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Medium |
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Area |
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Expedition |
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Conference |
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Notes |
WOS:000597154800008 |
Approved |
no |
Is ISI |
yes |
International Collaboration |
yes |
Call Number |
IFIC @ pastor @ |
Serial |
4653 |
Permanent link to this record |
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Author |
Fernandez-Tejero, J.; Bartl, U.; Docke, M.; Fadeyev, V.; Fleta, C.; Hacker, J.; Hommels, B.; Lacasta, C.; Parzefall, U.; Soldevila, U.; Stocker, G.; Ullan, M.; Unno, Y. |
Title |
Design and evaluation of large area strip sensor prototypes for the ATLAS Inner Tracker detector |
Type |
Journal Article |
Year |
2020 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
Volume |
981 |
Issue |
|
Pages |
164536 - 6pp |
Keywords |
ATLAS; Silicon strip sensors; Large area silicon sensors; Layout design; Prototype evaluation; Market survey |
Abstract |
The ATLAS community is facing the last stages prior to the production of the upgraded silicon strip Inner Tracker for the High-Luminosity Large Hadron Collider. An extensive Market Survey was carried out in order to evaluate the capability of different foundries to fabricate large area silicon strip sensors, satisfying the ATLAS specifications. The semiconductor manufacturing company, Infineon Technologies AG, was one of the two foundries, along with Hamamatsu Photonics K.K., that reached the last stage of the evaluation for the production of the new devices. The full prototype wafer layout for the participation of Infineon, called ATLAS17LS-IFX, was designed using a newly developed Python-based Automatic Layout Generation Tool, able to rapidly design sensors with different characteristics and dimensions based on a few geometrical and technological input parameters. This work presents the layout design process and the results obtained from the evaluation of the new Infineon large area sensors before and after proton and neutron irradiations, up to fluences expected in the inner layers of the future ATLAS detector. |
Address |
[Fernandez-Tejero, J.; Fleta, C.; Ullan, M.] CSIC, Ctr Nacl Microelect IMB CNM, Campus UAB Bellaterra, Barcelona 08193, Spain, Email: Xavi.Fdez@cern.ch |
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Thesis |
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Publisher |
Elsevier |
Place of Publication |
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Editor |
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Language |
English |
Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0168-9002 |
ISBN |
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Medium |
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Area |
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Expedition |
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Conference |
|
Notes |
WOS:000581799800023 |
Approved |
no |
Is ISI |
yes |
International Collaboration |
yes |
Call Number |
IFIC @ pastor @ |
Serial |
4579 |
Permanent link to this record |
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Author |
Hara, K. et al; Escobar, C.; Garcia, C.; Lacasta, C.; Miñano, M.; Soldevila, U. |
Title |
Charge collection study with the ATLAS ITk prototype silicon strip sensors ATLAS17LS |
Type |
Journal Article |
Year |
2020 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
Volume |
983 |
Issue |
|
Pages |
164422 - 6pp |
Keywords |
ATLAS ITk; Microstrip sensor; Charge collection; Radiation damage |
Abstract |
The inner tracker of the ATLAS detector is scheduled to be replaced by a completely new silicon-based inner tracker (ITk) for the Phase-II of the CERN LHC (HL-LHC). The silicon strip detector covers the volume 40 < R < 100 cm in the radial and vertical bar z vertical bar <300 cm in the longitudinal directions. The silicon sensors for the detector will be fabricated using the n(+)-on-p 6-inch wafer technology, for a total of 22,000 wafers. Intensive studies were carried out on the final prototype sensors ATLAS17LS fabricated by Hamamatsu Photonics (HPK). The charge collection properties were examined using penetrating Sr-90 beta-rays and the ALIBAVA fast readout system for the miniature sensors of 1 cm xl cm in area. The samples were irradiated by protons in the 27 MeV Birmingham Cyclotron, the 70 MeV CYRIC at Tohoku University, and the 24 GeV CERN-PS, and by neutrons at Ljubljana TAIGA reactor for fluence values up to 2 x 10(15) n(eq)/cm(2). The change in the charge collection with fluence was found to be similar to the previous prototype ATLAS12, and acceptable for the ITk. Sensors with two active thicknesses, 300 μm (standard) and 240 μm (thin), were compared and the difference in the charge collection was observed to be small for bias voltages up to 500 V. Some samples were also irradiated with gamma radiation up to 2 MGy, and the full depletion voltage was found to decrease with the dose. This was caused by the Compton electrons due to the( 60)Co gamma radiation. To summarize, the design of the ATLAS17LS and technology for its fabrication have been verified for implementation in the ITk. We are in the stage of sensor pre-production with the first sensors already delivered in January of 2020. |
Address |
[Hara, K.] Univ Tsukuba, Inst Pure & Appl Sci, Tsukuba, Ibaraki 3058571, Japan, Email: hara@hep.px.tsukuba.ac.jp |
Corporate Author |
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Thesis |
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Publisher |
Elsevier |
Place of Publication |
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Editor |
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Language |
English |
Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0168-9002 |
ISBN |
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Medium |
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Area |
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Expedition |
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Conference |
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Notes |
WOS:000581808300002 |
Approved |
no |
Is ISI |
yes |
International Collaboration |
yes |
Call Number |
IFIC @ pastor @ |
Serial |
4606 |
Permanent link to this record |
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Author |
Helling, C. et al; Bernabeu, J.; Lacasta, C.; Solaz, C. |
Title |
Strip sensor performance in prototype modules built for ATLAS ITk |
Type |
Journal Article |
Year |
2020 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
Volume |
978 |
Issue |
|
Pages |
164402 - 6pp |
Keywords |
Silicon strip sensors; Strip module; Inter-strip isolation; Readout noise |
Abstract |
ATLAS experiment is preparing an upgrade of its detector for High-Luminosity LHC (HL-LHC) operation. The upgrade involves installation of the new all-silicon Inner Tracker (ITk). In the context of the ITk preparations, more than 80 strip modules were built with prototype barrel sensors. They were tested with electrical readout on a per-channel basis. In general, an excellent performance was observed, consistent with previous ASIC-level and sensor-level tests. However, the lessons learned included two phenomena important for the future phases of the project. First was the need to store and test the modules in a dry environment due to humidity sensitivity of the sensors. The second was an observation of high noise regions for 2 modules. The high noise regions were tested further in several ways, including monitoring the performance as a function of time and bias voltage. Additionally, direct sensor-level tests were performed on the affected channels. The inter-strip resistance and bias resistance tests showed low values, indicating a temporary loss of the inter-strip isolation. A subsequent recovery of the noise performance was observed. We present the test details, an analysis of how the inter-strip isolation affects the module noise, and the relationship with sensor-level quality control tests. |
Address |
[Helling, C.; Affolder, A. A.; Fadeyev, V.; Galloway, Z.; Gignac, M.; Gunnell, J.; Martinez-Mckinney, F.; Kang, N.; Yarwick, J.] Univ Calif Santa Cruz, Santa Cruz Inst Particle Phys, Santa Cruz, CA 95064 USA, Email: fadeyev@ucsc.edu |
Corporate Author |
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Thesis |
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Publisher |
Elsevier |
Place of Publication |
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Editor |
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Language |
English |
Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0168-9002 |
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
WOS:000560076700015 |
Approved |
no |
Is ISI |
yes |
International Collaboration |
yes |
Call Number |
IFIC @ pastor @ |
Serial |
4505 |
Permanent link to this record |