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Author Poley, L.; Blue, A.; Bloch, I.; Buttar, C.; Fadeyev, V.; Fernandez-Tejero, J.; Fleta, C.; Hacker, J.; Lacasta, C.; Miñano, M.; Renzmann, M.; Rossi, E.; Sawyer, C.; Sperlich, D.; Stegler, M.; Ullan, M.; Unno, Y.
Title Mapping the depleted area of silicon diodes using a micro-focused X-ray beam Type Journal Article
Year 2019 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 14 Issue Pages (down) P03024 - 14pp
Keywords Si microstrip and pad detectors; Detector design and construction technologies and materials; Particle tracking detectors (Solid-state detectors); Radiation-hard detectors
Abstract For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker (ITk). The ITk will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of 500V to maintain a low noise and power dissipation. In order to minimise sensor leakage currents, particularly in the high-radiation environment inside the ATLAS detector, sensors are foreseen to be operated at low temperatures and to be manufactured from wafers with a high bulk resistivity of several k Omega.cm. Simulations showed the electric field inside sensors with high bulk resistivity to extend towards the sensor edge, which could lead to increased surface currents for narrow dicing edges. In order to map the electric field inside biased silicon sensors with high bulk resistivity, three diodes from ATLAS silicon strip sensor prototype wafers were studied with a monochromatic, micro-focused X-ray beam at the Diamond Light Source (Didcot, U.K.). For all devices under investigation, the electric field inside the diode was mapped and its dependence on the applied bias voltage was studied.
Address [Poley, L.] Lawrence Berkeley Natl Lab, Cyclotron Rd, Berkeley, CA 94720 USA, Email: Anne-Luise.Poley@desy.de
Corporate Author Thesis
Publisher Iop Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000463330900012 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 3973
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Author Unno, Y. et al; Bernabeu, J.; Lacasta, C.; Solaz, C.; Soldevila, U.
Title Specifications and pre-production of n plus -in-p large-format strip sensors fabricated in 6-inch silicon wafers, ATLAS18, for the Inner Tracker of the ATLAS Detector for High-Luminosity Large Hadron Collider Type Journal Article
Year 2023 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 18 Issue 3 Pages (down) T03008 - 29pp
Keywords Particle tracking detectors (Solid-state detectors); Radiation-hard detectors; Si microstrip and pad detectors
Abstract The ATLAS experiment is constructing new all-silicon inner tracking system for HL-LHC. The strip detectors cover the radial extent of 40 to 100 cm. A new approach is adopted to use p-type silicon material, making the readout in n+-strips, so-called n+-in-p sensors. This allows for enhanced radiation tolerance against an order of magnitude higher particle fluence compared to the LHC. To cope with varying hit rates and occupancies as a function of radial distance, there are two barrel sensor types, the short strips (SS) for the inner 2 and the long strips (LS) for the outer 2 barrel cylinders, respectively. The barrel sensors exhibit a square, 9.8 x 9.8 cm2, geometry, the largest possible sensor area from a 6-inch wafer. The strips are laid out in parallel with a strip pitch of 75.5 μm and 4 or 2 rows of strip segments. The strips are AC-coupled and biased via polysilicon resistors. The endcap sensors employ a “stereo-annulus” geometry exhibiting a skewed-trapezoid shapes with circular edges. They are designed in 6 unique shapes, R0 to R5, corresponding to progressively increasing radial extents and which allows them to fit within the petal geometry and the 6-inch wafer maximally. The strips are in fan-out geometry with an in-built rotation angle, with a mean pitch of approximately 75 μm and 4 or 2 rows of strip segments. The eight sensor types are labeled as ATLAS18xx where xx stands for SS, LS, and R0 to R5. According to the mechanical and electrical specifications, CAD files for wafer processing were laid out, following the successful designs of prototype barrel and endcap sensors, together with a number of optimizations. A pre-production was carried out prior to the full production of the wafers. The quality of the sensors is reviewed and judged excellent through the test results carried out by vendor. These sensors are used for establishing acceptance procedures and to evaluate their performance in the ATLAS collaboration, and subsequently for pre-production of strip modules and stave and petal structures.
Address [Allport, P. P.; Chisholm, A.; George, W.; Gonella, L.; Kopsalis, I.; Lomas, J.] Univ Birmingham, Sch Phys & Astron, Birmingham B152TT, England, Email: yoshinobu.unno@kek.jp
Corporate Author Thesis
Publisher IOP Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000974242700001 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 5522
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Author Esperante-Pereira, D.
Title DEPFET active pixel sensors for the vertex detector of the Belle-II experiment Type Journal Article
Year 2014 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 9 Issue Pages (down) C03004 - 11pp
Keywords Particle tracking detectors; Solid state detectors; Particle tracking detectors (Solid-state detectors)
Abstract Active pixels sensors based on the DEPFET technology will be used for the innermost vertex detector of the future Belle-II experiment. The increased luminosity of the e(+) e(-) SuperKEKB collider entails challenging detector requirements, namely: low material budget, low power consumption, high precision and efficiency, and a large readout rate. The DEPFET active pixel technology has shown to be a suitable solution for this purpose. A review of the different aspects of the detector design (sensors, readout ASICS and supplementary infrastructure) and the results of the latest thinned sensor prototypes (50 μm) are described.
Address Univ Valencia, CSIC, IFIC Inst Fis Corpuscular, Valencia 46980, Spain, Email: daniel.esperante@csic.es
Corporate Author Thesis
Publisher Iop Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000336123200004 Approved no
Is ISI yes International Collaboration no
Call Number IFIC @ pastor @ Serial 1803
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Author Kuehn, S. et al; Bernabeu, J.; Lacasta, C.; Marco-Hernandez, R.; Rodriguez Rodriguez, D.; Santoyo, D.; Solaz, C.; Soldevila Serrano, U.
Title Prototyping of petalets for the Phase-II upgrade of the silicon strip tracking detector of the ATLAS experiment Type Journal Article
Year 2018 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 13 Issue Pages (down) T03004 - 22pp
Keywords Particle tracking detectors (Solid-state detectors); Si microstrip and pad detectors; Solid state detectors; Performance of High Energy Physics Detectors
Abstract In the high luminosity era of the Large Hadron Collider, the instantaneous luminosity is expected to reach unprecedented values, resulting in about 200 proton-proton interactions in a typical bunch crossing. To cope with the resultant increase in occupancy, bandwidth and radiation damage, the ATLAS Inner Detector will be replaced by an all-silicon system, the Inner Tracker (ITk). The ITk consists of a silicon pixel and a strip detector and exploits the concept of modularity. Prototyping and testing of various strip detector components has been carried out. This paper presents the developments and results obtained with reduced-size structures equivalent to those foreseen to be used in the forward region of the silicon strip detector. Referred to as petalets, these structures are built around a composite sandwich with embedded cooling pipes and electrical tapes for routing the signals and power. Detector modules built using electronic flex boards and silicon strip sensors are glued on both the front and back side surfaces of the carbon structure. Details are given on the assembly, testing and evaluation of several petalets. Measurement results of both mechanical and electrical quantities are shown. Moreover, an outlook is given for improved prototyping plans for large structures.
Address [Kuehn, S.] European Org Nucl Res, CERN, Geneva, Switzerland, Email: susanne.kuehn@cern.ch
Corporate Author Thesis
Publisher Iop Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000428146400003 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 3530
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Author Double Chooz collaboration (Abrahao, T. et al); Novella, P.
Title Novel event classification based on spectral analysis of scintillation waveforms in Double Chooz Type Journal Article
Year 2018 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 13 Issue Pages (down) P01031 - 26pp
Keywords Digital signal processing (DSP); Particle identification methods; Scintillators, scintillation and light emission processes (solid, gas and liquid scintillators); Neutrino detectors
Abstract Liquid scintillators are a common choice for neutrino physics experiments, but their capabilities to perform background rejection by scintillation pulse shape discrimination is generally limited in large detectors. This paper describes a novel approach for a pulse shape based event classification developed in the context of the Double Chooz reactor antineutrino experiment. Unlike previous implementations, this method uses the Fourier power spectra of the scintillation pulse shapes to obtain event-wise information. A classification variable built from spectral information was able to achieve an unprecedented performance, despite the lack of optimization at the detector design level. Several examples of event classification are provided, ranging from differentiation between the detector volumes and an efficient rejection of instrumental light noise, to some sensitivity to the particle type, such as stopping muons, ortho-positronium formation, alpha particles as well as electrons and positrons. In combination with other techniques the method is expected to allow for a versatile and more efficient background rejection in the future, especially if detector optimization is taken into account at the design level.
Address [Abrahao, T.; dos Anjos, J. C.; Lima, H.; Pepe, I.; Wagner, S.] Ctr Brasileiro Pesquisas Fis, BR-22290180 Rio De Janeiro, Brazil, Email: stefan.wagner@apc.in2p3.fr
Corporate Author Thesis
Publisher Iop Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000423783800003 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 3466
Permanent link to this record