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Author Muñoz, E.; Barrio, J.; Bemmerer, D.; Etxebeste, A.; Fiedler, F.; Hueso-Gonzalez, F.; Lacasta, C.; Oliver, J.F.; Romer, K.; Solaz, C.; Wagner, L.; Llosa, G.
Title Tests of MACACO Compton telescope with 4.44 MeV gamma rays Type Journal Article
Year 2018 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 13 Issue Pages P05007 - 13pp
Keywords Compton imaging; Instrumentation for hadron therapy; Gamma detectors (scintillators, CZT, HPG, HgI etc); Photon detectors for UV, visible and IR photons (solid state) (PIN diodes, APDs, Si PMTs, G APDs, CCDs, EBCCDs, EMCCDs etc)
Abstract Hadron therapy offers the possibility of delivering a large amount of radiation dose to tumors with minimal absorption by the surrounding healthy tissue. In order to fully exploit the advantages of this technique, the use of real-time beam monitoring devices becomes mandatory. Compton imaging devices can be employed to map the distribution of prompt gamma emission during the treatment and thus assess its correct delivery. The Compton telescope prototype developed at IFIC-Valencia for this purpose is made of three layers of LaBr3 crystals coupled to silicon photomultipliers. The system has been tested in a 4.44 MeV gamma field at the 3 MV Tandetron accelerator at HZDR, Dresden. Images of the target with the system in three different positions separated by 10 mm were successfully reconstructed. This indicates the ability of MACACO for imaging the prompt gamma rays emitted at such energies.
Address [Munoz, E.; Barrio, J.; Etxebeste, A.; Lacasta, C.; Oliver, J. F.; Solaz, C.; Llosa, G.] Univ Valencia, CSIC, Inst Fis Corpuscular, Parque Cient,C Catedrat Jose Beltran 2, E-46980 Paterna, Valencia, Spain, Email: Enrique.Munoz@ific.uv.es
Corporate Author Thesis
Publisher Iop Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition (up) Conference
Notes WOS:000431716900001 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 3575
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Author NEXT Collaboration (Rogers, L. et al); Alvarez, V.; Benlloch-Rodriguez, J.M.; Botas, A.; Carcel, S.; Carrion, J.V.; Diaz, J.; Felkai, R.; Ferrario, P.; Gomez-Cadenas, J.J.; Kekic, M.; Laing, A.; Lopez-March, N.; Martinez, A.; Martinez-Lema, G.; Muñoz Vidal, J.; Musti, M.; Nebot-Guinot, M.; Novella, P.; Palmeiro, B.; Perez, J.; Querol, M.; Renner, J.; Rodriguez, J.; Romo-Luque, C; Simon, A.; Sorel, M.; Torrent, J.; Yahlali, N.
Title High voltage insulation and gas absorption of polymers in high pressure argon and xenon gases Type Journal Article
Year 2018 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 13 Issue Pages P10002 - 19pp
Keywords Gaseous detectors; Scintillators, scintillation and light emission processes (solid, gas and liquid scintillators)
Abstract High pressure gas time projection chambers (HPGTPCs) are made with a variety of materials, many of which still await proper characterization in high pressure noble gas environments. As HPGTPCs increase in size toward ton-scale detectors, assemblies become larger and more complex, creating a need for detailed understanding of how structural supports and high voltage insulators behave. This includes identification of materials with predictable mechanical properties and without surface charge accumulation that may lead to field deformation or sparking. This paper explores the mechanical and electrical effects of high pressure gas environments on insulating polymers PTFE, HDPE, PEEK, POM and UHMW in argon and xenon, including studying gas absorption, swelling and high voltage insulation strength.
Address [Hauptman, J.] Iowa State Univ, Dept Phys & Astron, 12 Phys Hall, Ames, IA 50011 USA, Email: leslie.rogers@mavs.uta.edu
Corporate Author Thesis
Publisher Iop Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition (up) Conference
Notes WOS:000445999500002 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 3744
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Author NEXT Collaboration (Monrabal, F. et al); Laing, A.; Alvarez, V.; Benlloch-Rodriguez, J.M.; Carcel, S.; Carrion, J.V.; Felkai, R.; Martinez, A.; Musti, M.; Querol, M.; Rodriguez, J.; Simon, A.; Torrent, J.; Botas, A.; Diaz, J.; Kekic, M.; Lopez-March, N.; Martinez-Lema, G.; Muñoz Vidal, J.; Nebot-Guinot, M.; Novella, P.; Palmeiro, B.; Perez, J.; Renner, J.; Romo-Luque, C.; Sorel, M.; Yahlali, N.
Title The NEXT White (NEW) detector Type Journal Article
Year 2018 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 13 Issue Pages P12010 - 38pp
Keywords Double-beta decay detectors; Particle tracking detectors; Scintillators; scintillation and light emission processes (solid gas and liquid scintillators); Time projection chambers
Abstract Conceived to host 5 kg of xenon at a pressure of 15 bar in the fiducial volume, the NEXT-White apparatus is currently the largest high pressure xenon gas TPC using electroluminescent amplification in the world. It is also a 1:2 scale model of the NEXT-100 detector for Xe-136 beta beta 0 nu decay searches, scheduled to start operations in 2019. Both detectors measure the energy of the event using a plane of photomultipliers located behind a transparent cathode. They can also reconstruct the trajectories of charged tracks in the dense gas of the TPC with the help of a plane of silicon photomultipliers located behind the anode. A sophisticated gas system, common to both detectors, allows the high gas purity needed to guarantee a long electron lifetime. NEXT-White has been operating since October 2016 at the Laboratorio Subterraneo de Canfranc (LSC), in Spain. This paper describes the detector and associated infrastructures, as well as the main aspects of its initial operation.
Address [Ouero, M.; Hauptman, J.] Iowa State Univ, Dept Phys & Astron, 12 Phys Hall, Ames, IA 50011 USA, Email: monrabal18@gmail.com
Corporate Author Thesis
Publisher Iop Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition (up) Conference
Notes WOS:000452463500001 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 3833
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Author Poley, L.; Blue, A.; Bloch, I.; Buttar, C.; Fadeyev, V.; Fernandez-Tejero, J.; Fleta, C.; Hacker, J.; Lacasta, C.; Miñano, M.; Renzmann, M.; Rossi, E.; Sawyer, C.; Sperlich, D.; Stegler, M.; Ullan, M.; Unno, Y.
Title Mapping the depleted area of silicon diodes using a micro-focused X-ray beam Type Journal Article
Year 2019 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 14 Issue Pages P03024 - 14pp
Keywords Si microstrip and pad detectors; Detector design and construction technologies and materials; Particle tracking detectors (Solid-state detectors); Radiation-hard detectors
Abstract For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker (ITk). The ITk will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of 500V to maintain a low noise and power dissipation. In order to minimise sensor leakage currents, particularly in the high-radiation environment inside the ATLAS detector, sensors are foreseen to be operated at low temperatures and to be manufactured from wafers with a high bulk resistivity of several k Omega.cm. Simulations showed the electric field inside sensors with high bulk resistivity to extend towards the sensor edge, which could lead to increased surface currents for narrow dicing edges. In order to map the electric field inside biased silicon sensors with high bulk resistivity, three diodes from ATLAS silicon strip sensor prototype wafers were studied with a monochromatic, micro-focused X-ray beam at the Diamond Light Source (Didcot, U.K.). For all devices under investigation, the electric field inside the diode was mapped and its dependence on the applied bias voltage was studied.
Address [Poley, L.] Lawrence Berkeley Natl Lab, Cyclotron Rd, Berkeley, CA 94720 USA, Email: Anne-Luise.Poley@desy.de
Corporate Author Thesis
Publisher Iop Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition (up) Conference
Notes WOS:000463330900012 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 3973
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Author ATLAS Collaboration (Aaboud, M. et al); Alvarez Piqueras, D.; Aparisi Pozo, J.A.; Bailey, A.J.; Barranco Navarro, L.; Cabrera Urban, S.; Castillo, F.L.; Castillo Gimenez, V.; Cerda Alberich, L.; Costa, M.J.; Escobar, C.; Estrada Pastor, O.; Ferrer, A.; Fiorini, L.; Fullana Torregrosa, E.; Fuster, J.; Garcia, C.; Garcia Navarro, J.E.; Gonzalez de la Hoz, S.; Gonzalvo Rodriguez, G.R.; Higon-Rodriguez, E.; Jimenez Pena, J.; Lacasta, C.; Lozano Bahilo, J.J.; Madaffari, D.; Mamuzic, J.; Marti-Garcia, S.; Melini, D.; Miñano, M.; Mitsou, V.A.; Rodriguez Bosca, S.; Rodriguez Rodriguez, D.; Ruiz-Martinez, A.; Salt, J.; Santra, A.; Soldevila, U.; Sanchez, J.; Valero, A.; Valls Ferrer, J.A.; Vos, M.
Title Modelling radiation damage to pixel sensors in the ATLAS detector Type Journal Article
Year 2019 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 14 Issue Pages P06012 - 52pp
Keywords Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc); Radiation-hard detectors; Solid state detectors
Abstract Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 10(15) 1 MeV n(eq)/cm(2), while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (<= 10(15) 1 MeV n(eq)/cm(2)).
Address [Duvnjak, D.; Jackson, P.; Oliver, J. L.; Petridis, A.; Qureshi, A.; Sharma, A. S.; White, M. J.] Univ Adelaide, Dept Phys, Adelaide, SA, Australia
Corporate Author Thesis
Publisher Iop Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition (up) Conference
Notes WOS:000472134700001 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 4063
Permanent link to this record