|   | 
Details
   web
Records
Author Andricek, L. et al; Lacasta, C.; Marinas, C.; Vos, M.
Title Intrinsic resolutions of DEPFET detector prototypes measured at beam tests Type Journal Article
Year 2011 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 638 Issue 1 Pages 24-32
Keywords Silicon pixel detector; Detector resolution; Spatial resolution; DEPFET; Beam test
Abstract The paper is based on the data of the 2009 DEPFET beam test at CERN SPS. The beam test used beams of pions and electrons with energies between 40 and 120 GeV, and the sensors tested were prototypes with thickness of 450 μm and pixel pitch between 20 and 32 μm. Intrinsic resolutions of the detectors are calculated by disentangling the contributions of measurement errors and multiple scattering in tracking residuals. Properties of the intrinsic resolution estimates and factors that influence them are discussed. For the DEPFET detectors in the beam test, the calculation yields intrinsic resolutions of approximate to 1 μm, with a typical accuracy of 0.1 μm. Bias scan, angle scan, and energy scan are used as example studies to show that the intrinsic resolutions are a useful tool in studies of detector properties. With sufficiently precise telescopes, detailed resolution maps can be constructed and used to study and optimize detector performance.
Address [Dolezal, Z.; Drasal, Z.; Kodys, P.; Kvasnicka, P.; Malina, L.; Scheirich, J.] Charles Univ Prague, Fac Math & Phys, Inst Particle & Nucl Phys, CR-18000 Prague, Czech Republic, Email: peter.kodys@mff.cuni.cz
Corporate Author Thesis
Publisher Elsevier Science Bv Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition (up) Conference
Notes ISI:000290082600005 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 618
Permanent link to this record
 

 
Author Labiche, M. et al; Caballero, L.; Rubio, B.
Title TIARA: A large solid angle silicon array for direct reaction studies with radioactive beams Type Journal Article
Year 2010 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 614 Issue 3 Pages 439-448
Keywords Position sensitive silicon detectors; Nucleon transfer reactions; Radioactive beams; Inverse kinematics
Abstract A compact, quasi-4 pi position sensitive silicon array. TIARA, designed to study direct reactions induced by radioactive beams in inverse kinematics is described here. The Transfer and Inelastic All-angle Reaction Array (TIARA) consists of 8 resistive charge division detectors forming an octagonal barrel around the target and a set of double-sided silicon-strip annular detectors positioned at each end of the barrel. The detector was coupled to the gamma-ray array EXOGAM and the spectrometer VAMOS at the GANIL Laboratory to demonstrate the potential of such an apparatus with radioactive beams. The N-14(d,p)N-15 reaction, well known in direct kinematics, has been carried out in inverse kinematics for that purpose. The observation of the N-15 ground state and excited states at 7.16 and 7.86 MeV is presented here as well as the comparison of the measured proton angular distributions with DWBA calculations. Transferred l-values are in very good agreement with both theoretical calculations and previous experimental results obtained in direct kinematics.
Address [Labiche, M.; Lemmon, R. C.; Appleton, S.; Faiz, K.; Pucknell, V. F. E.; Warner, D. D.] STFC Daresbury Lab, Nucl Phys Grp, Warrington WA4 4AD, Cheshire, England, Email: marc.labiche@stfc.ac.uk
Corporate Author Thesis
Publisher Elsevier Science Bv Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition (up) Conference
Notes ISI:000276001800008 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ elepoucu @ Serial 477
Permanent link to this record
 

 
Author Miñano, M.
Title Radiation Hard Silicon Strips Detectors for the SLHC Type Journal Article
Year 2011 Publication IEEE Transactions on Nuclear Science Abbreviated Journal IEEE Trans. Nucl. Sci.
Volume 58 Issue 3 Pages 1135-1140
Keywords High energy physics; microstrip; radiation detectors; silicon; SLHC
Abstract While the Large Hadron Collider (LHC) began taking data in 2009, scenarios for a machine upgrade to achieve a much higher luminosity are being developed. In the current planning, it is foreseen to increase the luminosity of the LHC at CERN around 2018. As radiation damage scales with integrated luminosity, the particle physics experiments will need to be equipped with a new generation of radiation hard detectors. This article reports on the status of the R&D projects on radiation hard silicon strips detectors for particle physics, linked to the Large Hadron Collider Upgrade, super-LHC (sLHC) of the ATLAS microstrip detector. The primary focus of this report is on measuring the radiation hardness of the silicon materials and the detectors under study. This involves designing silicon detectors, irradiating them to the sLHC radiation levels and studying their performance as particle detectors. The most promising silicon detector for the different radiation levels in the different regions of the ATLAS microstrip detector will be presented. Important challenges related to engineering layout, powering, cooling and reading out a very large strip detector are presented. Ideas on possible schemes for the layout and support mechanics will be shown.
Address IFIC UV CSIC, Inst Fis Corpuscular, E-46071 Valencia, Spain, Email: mercedes.minano@ific.uv.es
Corporate Author Thesis
Publisher Ieee-Inst Electrical Electronics Engineers Inc Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0018-9499 ISBN Medium
Area Expedition (up) Conference
Notes ISI:000291659300001 Approved no
Is ISI yes International Collaboration no
Call Number IFIC @ pastor @ Serial 651
Permanent link to this record
 

 
Author Affolder, A. et al; Garcia, C.; Lacasta, C.; Marco, R.; Marti-Garcia, S.; Miñano, M.; Soldevila, U.
Title Silicon detectors for the sLHC Type Journal Article
Year 2011 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 658 Issue 1 Pages 11-16
Keywords Silicon particle detectors; Radiation damage; Irradiation; Charge collection efficiency
Abstract In current particle physics experiments, silicon strip detectors are widely used as part of the inner tracking layers. A foreseeable large-scale application for such detectors consists of the luminosity upgrade of the Large Hadron Collider (LHC), the super-LHC or sLHC, where silicon detectors with extreme radiation hardness are required. The mission statement of the CERN RD50 Collaboration is the development of radiation-hard semiconductor devices for very high luminosity colliders. As a consequence, the aim of the R&D programme presented in this article is to develop silicon particle detectors able to operate at sLHC conditions. Research has progressed in different areas, such as defect characterisation, defect engineering and full detector systems. Recent results from these areas will be presented. This includes in particular an improved understanding of the macroscopic changes of the effective doping concentration based on identification of the individual microscopic defects, results from irradiation with a mix of different particle types as expected for the sLHC, and the observation of charge multiplication effects in heavily irradiated detectors at very high bias voltages.
Address [Barber, T.; Breindl, M.; Driewer, A.; Koehler, M.; Kuehn, S.; Parzefall, U.; Preiss, J.; Walz, M.; Wiik, L.] Univ Freiburg, Inst Phys, D-79104 Freiburg, Germany, Email: Ulrich.Parzefall@physik.uni-freiburg.de
Corporate Author Thesis
Publisher Elsevier Science Bv Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition (up) Conference
Notes WOS:000297783300004 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 836
Permanent link to this record
 

 
Author Studen, A.; Chesi, E.; Cindro, V.; Clinthorne, N.H.; Cochran, E.; Grosicar, B.; Honscheid, K.; Kagan, H.; Lacasta, C.; Llosa, G.; Linhart, V.; Mikuz, M.; Stankova, V.; Weilhammer, P.; Zontar, D.
Title A silicon PET probe Type Journal Article
Year 2011 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 648 Issue Pages S255-S258
Keywords PET; Silicon detectors
Abstract PET scanners with high spatial resolution offer a great potential in improving diagnosis, therapy monitoring and treatment validation for several severe diseases. One way to improve resolution of a PET scanner is to extend a conventional PET ring with a small probe with excellent spatial resolution. The probe is intended to be placed close to the area of interest. The coincidences of interactions within the probe and the external ring provide a subset of data which combined with data from external ring, greatly improve resolution in the area viewed by the probe. Our collaboration is developing a prototype of a PET probe, composed of high-resolution silicon pad detectors. The detectors are 1 mm thick, measuring 40 by 26 mm(2), and several such sensors are envisaged to either compensate for low stopping power of silicon or increase the area covered by the probe. The sensors are segmented into 1 mm(3) cubic voxels, giving 1040 readout pads per sensor. A module is composed of two sensors placed in a back-to-back configuration, allowing for stacking fraction of up to 70% within a module. The pads are coupled to a set of 16 ASICs (VaTaGP7.1 by IDEAS) per module and read out through a custom designed data acquisition board, allowing for trigger and data interfacing with the external ring. This paper presents an overview of probe requirements and expected performance parameters. It will focus on the characteristics of the silicon modules and their impact on overall probe performance, including spatial resolution, energy resolution and timing resolution. We will show that 1 mm(3) voxels will significantly extend the spatial resolution of conventional PET rings, and that broadening of timing resolution related to varying depth of photon interactions can be compensated to match the timing resolution of the external ring. The initial test results of the probe will also be presented.
Address [Studen, A.; Cindro, V.; Grosicar, B.; Mikuz, M.; Zontar, D.] Jozef Stefan Inst, Ljubljana, Slovenia, Email: andrej.studen@ijs.si
Corporate Author Thesis
Publisher Elsevier Science Bv Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition (up) Conference
Notes WOS:000305376900063 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 1070
Permanent link to this record
 

 
Author Clinthorne, N.; Brzezinski, K.; Chesi, E.; Cochran, E.; Grkovski, M.; Grosicar, B.; Honscheid, K.; Huh, S.; Kagan, H.; Lacasta, C.; Linhart, V.; Mikuz, M.; Smith, D.S.; Stankova, V.; Studen, A.; Weilhammer, P.; Zontar, D.
Title Silicon as an unconventional detector in positron emission tomography Type Journal Article
Year 2013 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 699 Issue Pages 216-220
Keywords PET; Silicon detectors; Multiresolution imaging; Magnifying PET
Abstract Positron emission tomography (PET) is a widely used technique in medical imaging and in studying small animal models of human disease. In the conventional approach, the 511 keV annihilation photons emitted from a patient or small animal are detected by a ring of scintillators such as LYSO read out by arrays of photodetectors. Although this has been successful in achieving similar to 5 mm FWHM spatial resolution in human studies and similar to 1 mm resolution in dedicated small animal instruments, there is interest in significantly improving these figures. Silicon, although its stopping power is modest for 511 keV photons, offers a number of potential advantages over more conventional approaches including the potential for high intrinsic spatial resolution in 3D. To evaluate silicon in a variety of PET “magnifying glass” configurations, an instrument was constructed that consists of an outer partial-ring of PET scintillation detectors into which various arrangements of silicon detectors are inserted to emulate dual-ring or imaging probe geometries. Measurements using the test instrument demonstrated the capability of clearly resolving point sources of Na-22 having a 1.5 mm center-to-center spacing as well as the 1.2 mm rods of a F-18-filled resolution phantom. Although many challenges remain, silicon has potential to become the PET detector of choice when spatial resolution is the primary consideration. (C) 2012 Elsevier B.V. All rights reserved.
Address [Clinthorne, Neal; Huh, Sam] Univ Michigan, Dept Radiol, Ann Arbor, MI 48109 USA, Email: nclintho@umich.edu
Corporate Author Thesis
Publisher Elsevier Science Bv Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition (up) Conference
Notes WOS:000312809200045 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 1290
Permanent link to this record
 

 
Author Studen, A.; Brzezinski, K.; Chesi, E.; Cindro, V.; Clinthorne, N.H.; Cochran, E.; Grosicar, B.; Grkovski, M.; Honscheid, K.; Kagan, H.; Lacasta, C.; Llosa, G.; Mikuz, M.; Stankova, V.; Weilhammer, P.; Zontar, D.
Title Silicon detectors for combined MR-PET and MR-SPECT imaging Type Journal Article
Year 2013 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 702 Issue Pages 88-90
Keywords PET; Silicon detectors; SPECT
Abstract Silicon based devices can extend PET-MR and SPECT-MR imaging to applications, where their advantages in performance outweigh benefits of high statistical counts. Silicon is in many ways an excellent detector material with numerous advantages, among others: excellent energy and spatial resolution, mature processing technology, large signal to noise ratio, relatively low price, availability, versatility and malleability. The signal in silicon is also immune to effects of magnetic field at the level normally used in MR devices. Tests in fields up to 7 T were performed in a study to determine effects of magnetic field on positron range in a silicon PET device. The curvature of positron tracks in direction perpendicular to the field's orientation shortens the distance between emission and annihilation point of the positron. The effect can be fully appreciated for a rotation of the sample for a fixed field direction, compressing range in all dimensions. A popular Ga-68 source was used showing a factor of 2 improvement in image noise compared to zero field operation. There was also a little increase in noise as the reconstructed resolution varied between 2.5 and 1.5 mm. A speculative applications can be recognized in both emission modalities, SPECT and PET. Compton camera is a subspecies of SPECT, where a silicon based scatter as a MR compatible part could inserted into the MR bore and the secondary detector could operate in less constrained environment away from the magnet. Introducing a Compton camera also relaxes requirements of the radiotracers used, extending the range of conceivable photon energies beyond 140.5 keV of the Tc-99m. In PET, one could exploit the compressed sub-millimeter range of positrons in the magnetic field. To exploit the advantage, detectors with spatial resolution commensurate to the effect must be used with silicon being an excellent candidate. Measurements performed outside of the MR achieving spatial resolution below 1 mm are reported.
Address [Studen, A.; Cindro, V.; Grosicar, B.; Grkovski, M.; Mikuz, M.; Zontar, D.] Jozef Stefan Inst, Ljubljana, Slovenia, Email: andrej.studen@ijs.si
Corporate Author Thesis
Publisher Elsevier Science Bv Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition (up) Conference
Notes WOS:000314682300026 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 1331
Permanent link to this record
 

 
Author Mengoni, D.; Duenas, J.A.; Assie, M.; Boiano, C.; John, P.R.; Aliaga, R.J.; Beaumel, D.; Capra, S.; Gadea, A.; Gonzales, V.; Gottardo, A.; Grassi, L.; Herrero-Bosch, V.; Houdy, T.; Martel, I.; Parkar, V.V.; Perez-Vidal, R.M.; Pullia, A.; Sanchis, E.; Triossi, A.; Valiente-Dobon, J.J.
Title Digital pulse-shape analysis with a TRACE early silicon prototype Type Journal Article
Year 2014 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 764 Issue Pages 241-246
Keywords Silicon detector; Light-charged particles; Digital pulse shape analysis; Particle identification; Gamma-ray spectroscopy
Abstract A highly segmented silicon-pad detector prototype has been tested to explore the performance of the digital pulse shape analysis in the discrimination of the particles reaching the silicon detector. For the first time a 200 tun thin silicon detector, grown using an ordinary floating zone technique, has been shown to exhibit a level discrimination thanks to the fine segmentation. Light-charged particles down to few MeV have been separated, including their punch-through. A coaxial HPGe detector in time coincidence has further confirmed the quality of the particle discrimination.
Address [Mengoni, D.; John, P. R.; Grassi, L.] Univ Padua, Dipartimento Fis & Astron, I-35131 Padua, Italy
Corporate Author Thesis
Publisher Elsevier Science Bv Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition (up) Conference
Notes WOS:000341987000030 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 1929
Permanent link to this record
 

 
Author Unno, Y. et al; Garcia, C.; Jimenez, J.; Lacasta, C.; Marti-Garcia, S.; Soldevila, U.
Title Development of n(+) -in-p large-area silicon microstrip sensors for very high radiation environments-ATLAS12 design and initial results Type Journal Article
Year 2014 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 765 Issue Pages 80-90
Keywords Silicon strip; n(+)-in-p; P-type; Radiation-tolerant; HL-LHC; PTP
Abstract We have been developing a novel radiation tolerant n(+)-in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float zone wafers, where large area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 pm and slim edge space of 450 pm, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers.
Address [Edwards, S. O.; Pyatt, S.; Thomas, J. P.; Wilson, J. A.] Univ Birmingham, Sch Phys & Astron, Birmingham B15 2TT, W Midlands, England, Email: yoshinobu.unno@kek.jp
Corporate Author Thesis
Publisher Elsevier Science Bv Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition (up) Conference
Notes WOS:000344621000016 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 2002
Permanent link to this record
 

 
Author Ullan, M.; Benitez, V.; Quirion, D.; Zabala, M.; Pellegrini, G.; Lozano, M.; Lacasta, C.; Soldevila, U.; Garcia, C.; Fadeyev, V.; Wortman, J.; DeFilippis, J.; Shumko, M.; Grillo, A.A.; Sadrozinski, H.F.W.
Title Low-resistance strip sensors for beam-loss event protection Type Journal Article
Year 2014 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 765 Issue Pages 252-257
Keywords Silicon radiation detectors; Strip sensors; Punch through protection; Beam loss; HL-LHC; ATLAS Upgrade
Abstract AC coupled silicon strip sensors can be damaged in case of a beam loss due to the possibility of a large charge accumulation in the bulk, developing very high voltages across the coupling capacitors which can destroy them. Punch-through structures are currently used to avoid this problem helping to evacuate the accumulated charge as large voltages are developing. Nevertheless, previous experiments, performed with laser pulses, have shown that these structures can become ineffective in relatively long strips. The large value of the implant resistance can effectively isolate the “far” end of the strip from the punchthrough structure leading to large voltages. We present here our developments to fabricate lowresistance strip sensors to avoid this problem. The deposition of a conducting material in contact with the implants drastically reduces the strip resistance, assuring the effectiveness of the punch-through structures. First devices have been fabricated with this new technology. Initial results with laser tests show the expected reduction in peak voltages on the low resistivity implants. Other aspects of the sensor performance, including the signal formation, are not affected by the new technology.
Address [Ullan, M.; Benitez, V.; Quirion, D.; Zabala, M.; Pellegrini, G.; Lozano, M.] CSIC, Ctr Nacl Microelect IMB CNM, Barcelona 08193, Spain, Email: Miguel.Ullan@imb-cnm.csic.es
Corporate Author Thesis
Publisher Elsevier Science Bv Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition (up) Conference
Notes WOS:000344621000048 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 2003
Permanent link to this record