Muñoz, E., Barrio, J., Bemmerer, D., Etxebeste, A., Fiedler, F., Hueso-Gonzalez, F., et al. (2018). Tests of MACACO Compton telescope with 4.44 MeV gamma rays. J. Instrum., 13, P05007–13pp.
Abstract: Hadron therapy offers the possibility of delivering a large amount of radiation dose to tumors with minimal absorption by the surrounding healthy tissue. In order to fully exploit the advantages of this technique, the use of real-time beam monitoring devices becomes mandatory. Compton imaging devices can be employed to map the distribution of prompt gamma emission during the treatment and thus assess its correct delivery. The Compton telescope prototype developed at IFIC-Valencia for this purpose is made of three layers of LaBr3 crystals coupled to silicon photomultipliers. The system has been tested in a 4.44 MeV gamma field at the 3 MV Tandetron accelerator at HZDR, Dresden. Images of the target with the system in three different positions separated by 10 mm were successfully reconstructed. This indicates the ability of MACACO for imaging the prompt gamma rays emitted at such energies.
Keywords: Compton imaging; Instrumentation for hadron therapy; Gamma detectors (scintillators, CZT, HPG, HgI etc); Photon detectors for UV, visible and IR photons (solid state) (PIN diodes, APDs, Si PMTs, G APDs, CCDs, EBCCDs, EMCCDs etc)
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NEXT Collaboration(Rogers, L. et al), Alvarez, V., Benlloch-Rodriguez, J. M., Botas, A., Carcel, S., Carrion, J. V., et al. (2018). High voltage insulation and gas absorption of polymers in high pressure argon and xenon gases. J. Instrum., 13, P10002–19pp.
Abstract: High pressure gas time projection chambers (HPGTPCs) are made with a variety of materials, many of which still await proper characterization in high pressure noble gas environments. As HPGTPCs increase in size toward ton-scale detectors, assemblies become larger and more complex, creating a need for detailed understanding of how structural supports and high voltage insulators behave. This includes identification of materials with predictable mechanical properties and without surface charge accumulation that may lead to field deformation or sparking. This paper explores the mechanical and electrical effects of high pressure gas environments on insulating polymers PTFE, HDPE, PEEK, POM and UHMW in argon and xenon, including studying gas absorption, swelling and high voltage insulation strength.
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NEXT Collaboration(Monrabal, F. et al), Laing, A., Alvarez, V., Benlloch-Rodriguez, J. M., Carcel, S., Carrion, J. V., et al. (2018). The NEXT White (NEW) detector. J. Instrum., 13, P12010–38pp.
Abstract: Conceived to host 5 kg of xenon at a pressure of 15 bar in the fiducial volume, the NEXT-White apparatus is currently the largest high pressure xenon gas TPC using electroluminescent amplification in the world. It is also a 1:2 scale model of the NEXT-100 detector for Xe-136 beta beta 0 nu decay searches, scheduled to start operations in 2019. Both detectors measure the energy of the event using a plane of photomultipliers located behind a transparent cathode. They can also reconstruct the trajectories of charged tracks in the dense gas of the TPC with the help of a plane of silicon photomultipliers located behind the anode. A sophisticated gas system, common to both detectors, allows the high gas purity needed to guarantee a long electron lifetime. NEXT-White has been operating since October 2016 at the Laboratorio Subterraneo de Canfranc (LSC), in Spain. This paper describes the detector and associated infrastructures, as well as the main aspects of its initial operation.
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Poley, L., Blue, A., Bloch, I., Buttar, C., Fadeyev, V., Fernandez-Tejero, J., et al. (2019). Mapping the depleted area of silicon diodes using a micro-focused X-ray beam. J. Instrum., 14, P03024–14pp.
Abstract: For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker (ITk). The ITk will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of 500V to maintain a low noise and power dissipation. In order to minimise sensor leakage currents, particularly in the high-radiation environment inside the ATLAS detector, sensors are foreseen to be operated at low temperatures and to be manufactured from wafers with a high bulk resistivity of several k Omega.cm. Simulations showed the electric field inside sensors with high bulk resistivity to extend towards the sensor edge, which could lead to increased surface currents for narrow dicing edges. In order to map the electric field inside biased silicon sensors with high bulk resistivity, three diodes from ATLAS silicon strip sensor prototype wafers were studied with a monochromatic, micro-focused X-ray beam at the Diamond Light Source (Didcot, U.K.). For all devices under investigation, the electric field inside the diode was mapped and its dependence on the applied bias voltage was studied.
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ATLAS Collaboration(Aaboud, M. et al), Alvarez Piqueras, D., Aparisi Pozo, J. A., Bailey, A. J., Barranco Navarro, L., Cabrera Urban, S., et al. (2019). Modelling radiation damage to pixel sensors in the ATLAS detector. J. Instrum., 14, P06012–52pp.
Abstract: Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 10(15) 1 MeV n(eq)/cm(2), while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (<= 10(15) 1 MeV n(eq)/cm(2)).
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