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Llosa, G., Barrillon, P., Barrio, J., Bisogni, M. G., Cabello, J., Del Guerra, A., et al. (2013). High performance detector head for PET and PET/MR with continuous crystals and SiPMs. Nucl. Instrum. Methods Phys. Res. A, 702, 3–5.
Abstract: A high resolution PET detector head for small animal PET applications has been developed. The detector is composed of a 12 mm x 12 mm continuous LYSO crystal coupled to a 64-channel monolithic SiPM matrix from FBK-irst. Crystal thicknesses of 5 mm and 10 mm have been tested, both yielding an intrinsic spatial resolution around 0.7 mm FWHM with a position determination algorithm that can also provide depth-of-interaction information. The detectors have been tested in a rotating system that makes it possible to acquire tomographic data and reconstruct images of Na-22 sources. An image reconstruction method specifically adapted for continuous crystals has been employed. The Full Width at Half Maximum measured from a point source reconstructed with ML-EM was 0.7 mm with the 5 mm crystal and 0.8 mm with the 10 mm crystal.
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Linhart, V., Burdette, D., Chessi, E., Cindro, V., Clinthorne, N. H., Cochran, E., et al. (2011). Spectroscopy study of imaging devices based on silicon Pixel Array Detector coupled to VATAGP7 read-out chips. J. Instrum., 6, C01092–8pp.
Abstract: Spectroscopic and timing response studies have been conducted on a detector module consisting of a silicon Pixel Array Detector bonded on two VATAGP7 read-out chips manufactured by Gamma-Medica Ideas using laboratory gamma sources and the internal calibration facilities (the calibration system of the read-out chips). The performed tests have proven that the chips have (i) non-linear calibration curves which can be approximated by power functions, (ii) capability to measure the energy of photons with energy resolution better than 2 keV (exact range and resolution depend on experimental setup), (iii) the internal calibration facility which provides 6 out of 16 available internal calibration charges within our region of interest (spanning the Compton edge of 511 keV photons). The peaks induced by the internal calibration facility are suitable for a fit of the calibration curves. However, they are not suitable for measurements of equivalent noise charge because their full width at half maximum varies with their amplitude. These facts indicate that the VATAGP7 chips are useful and precise tools for a wide variety of spectroscopic devices. We have also explored time walk of the module and peaking time of the spectroscopy signals provided by the chips. We have observed that (iv) the time walk is caused partly by the peaking time of the signals provided by the fast shaper of the chips and partly by the timing uncertainty related to the varying position of the photon interaction, (v) the peaking time of the spectroscopy signals provided by the chips increases with increasing pulse height.
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Latonova, V. et al, Bernabeu, J., Lacasta, C., Solaz, C., & Soldevila, U. (2023). Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation. Nucl. Instrum. Methods Phys. Res. A, 1050, 168119–5pp.
Abstract: The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb(-1) means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 center dot 10(15) MeVn(eq)/cm(2) and 0.66MGy, respectively, including a safety factor of 1.5. Radiation hard n(+)-in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n(+) implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. We discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips.
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Kuehn, S. et al, Bernabeu, J., Lacasta, C., Marco-Hernandez, R., Santoyo, D., Solaz, C., et al. (2017). Prototyping of hybrids and modules for the forward silicon strip tracking detector for the ATLAS Phase-II upgrade. J. Instrum., 12, P05015–26pp.
Abstract: For the High-Luminosity upgrade of the Large Hadron Collider an increased instantaneous luminosity of up to 7.5 . 10(34) cm(-2) s(-1), leading to a total integrated luminosity of up to 3000 fb(-1), is foreseen. The current silicon and transition radiation tracking detectors of the ATLAS experiment will be unable to cope with the increased track densities and radiation levels, and will need to be replaced. The new tracking detector will consist entirely of silicon pixel and strip detectors. In this paper, results on the development and tests of prototype components for the new silicon strip detector in the forward regions (end-caps) of the ATLAS detector are presented. Flex-printed readout boards with fast readout chips, referred to as hybrids, and silicon detector modules are investigated. The modules consist of a hybrid glued onto a silicon strip sensor. The channels on both are connected via wire-bonds for readout and powering. Measurements of important performance parameters and a comparison of two possible readout schemes are presented. In addition, the assembly procedure is described and recommendations for further prototyping are derived.
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Kuehn, S. et al, Bernabeu, J., Lacasta, C., Marco-Hernandez, R., Rodriguez Rodriguez, D., Santoyo, D., et al. (2018). Prototyping of petalets for the Phase-II upgrade of the silicon strip tracking detector of the ATLAS experiment. J. Instrum., 13, T03004–22pp.
Abstract: In the high luminosity era of the Large Hadron Collider, the instantaneous luminosity is expected to reach unprecedented values, resulting in about 200 proton-proton interactions in a typical bunch crossing. To cope with the resultant increase in occupancy, bandwidth and radiation damage, the ATLAS Inner Detector will be replaced by an all-silicon system, the Inner Tracker (ITk). The ITk consists of a silicon pixel and a strip detector and exploits the concept of modularity. Prototyping and testing of various strip detector components has been carried out. This paper presents the developments and results obtained with reduced-size structures equivalent to those foreseen to be used in the forward region of the silicon strip detector. Referred to as petalets, these structures are built around a composite sandwich with embedded cooling pipes and electrical tapes for routing the signals and power. Detector modules built using electronic flex boards and silicon strip sensors are glued on both the front and back side surfaces of the carbon structure. Details are given on the assembly, testing and evaluation of several petalets. Measurement results of both mechanical and electrical quantities are shown. Moreover, an outlook is given for improved prototyping plans for large structures.
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