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Author (down) Llosa, G.
Title SiPM-based Compton cameras Type Journal Article
Year 2019 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 926 Issue Pages 148-152
Keywords Compton camera; Silicon photomultiplier (SiPM)
Abstract Compton cameras have been developed for almost fifty years in various fields (astronomy, medical imaging, safety and industrial inspections, etc.), employing different types of detectors. Their potential use has gained renewed interest with the emergence of high light yield scintillator crystals and silicon photomultipliers (SiPMs). This combination provides good performance and operation simplicity at an affordable cost, raising again the interest in this type of systems. SiPM-based Compton cameras are being assessed for diverse applications with promising results.
Address [Llosa, G.] UVEG, CSIC, Inst Fis Corpuscular IFIC, C Catedrat Beltran 2, E-46980 Valencia, Spain, Email: llosa@ific.uv.es
Corporate Author Thesis
Publisher Elsevier Science Bv Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:000461775500011 Approved no
Is ISI yes International Collaboration no
Call Number IFIC @ pastor @ Serial 3951
Permanent link to this record
 
 
Author (down) Latonova, V. et al; Bernabeu, J.; Lacasta, C.; Solaz, C.; Soldevila, U.
Title Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation Type Journal Article
Year 2023 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 1050 Issue Pages 168119 - 5pp
Keywords HL-LHC; ATLAS ITk; Silicon micro-strip sensor; Polysilicon bias resistor; Testchip
Abstract The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb(-1) means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 center dot 10(15) MeVn(eq)/cm(2) and 0.66MGy, respectively, including a safety factor of 1.5. Radiation hard n(+)-in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n(+) implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. We discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips.
Address [Latonova, V.; Federicova, P.; Kroll, J.; Kvasnicka, J.; Mikestikova, M.] Acad Sci Czech Republ, Inst Phys, Slovance 2, Prague 8, Czech Republic, Email: vera.latonova@cern.ch
Corporate Author Thesis
Publisher Elsevier Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:001035405300001 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 5601
Permanent link to this record
 
 
Author (down) Labiche, M. et al; Caballero, L.; Rubio, B.
Title TIARA: A large solid angle silicon array for direct reaction studies with radioactive beams Type Journal Article
Year 2010 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 614 Issue 3 Pages 439-448
Keywords Position sensitive silicon detectors; Nucleon transfer reactions; Radioactive beams; Inverse kinematics
Abstract A compact, quasi-4 pi position sensitive silicon array. TIARA, designed to study direct reactions induced by radioactive beams in inverse kinematics is described here. The Transfer and Inelastic All-angle Reaction Array (TIARA) consists of 8 resistive charge division detectors forming an octagonal barrel around the target and a set of double-sided silicon-strip annular detectors positioned at each end of the barrel. The detector was coupled to the gamma-ray array EXOGAM and the spectrometer VAMOS at the GANIL Laboratory to demonstrate the potential of such an apparatus with radioactive beams. The N-14(d,p)N-15 reaction, well known in direct kinematics, has been carried out in inverse kinematics for that purpose. The observation of the N-15 ground state and excited states at 7.16 and 7.86 MeV is presented here as well as the comparison of the measured proton angular distributions with DWBA calculations. Transferred l-values are in very good agreement with both theoretical calculations and previous experimental results obtained in direct kinematics.
Address [Labiche, M.; Lemmon, R. C.; Appleton, S.; Faiz, K.; Pucknell, V. F. E.; Warner, D. D.] STFC Daresbury Lab, Nucl Phys Grp, Warrington WA4 4AD, Cheshire, England, Email: marc.labiche@stfc.ac.uk
Corporate Author Thesis
Publisher Elsevier Science Bv Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes ISI:000276001800008 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ elepoucu @ Serial 477
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Author (down) Helling, C. et al; Bernabeu, J.; Lacasta, C.; Solaz, C.
Title Strip sensor performance in prototype modules built for ATLAS ITk Type Journal Article
Year 2020 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 978 Issue Pages 164402 - 6pp
Keywords Silicon strip sensors; Strip module; Inter-strip isolation; Readout noise
Abstract ATLAS experiment is preparing an upgrade of its detector for High-Luminosity LHC (HL-LHC) operation. The upgrade involves installation of the new all-silicon Inner Tracker (ITk). In the context of the ITk preparations, more than 80 strip modules were built with prototype barrel sensors. They were tested with electrical readout on a per-channel basis. In general, an excellent performance was observed, consistent with previous ASIC-level and sensor-level tests. However, the lessons learned included two phenomena important for the future phases of the project. First was the need to store and test the modules in a dry environment due to humidity sensitivity of the sensors. The second was an observation of high noise regions for 2 modules. The high noise regions were tested further in several ways, including monitoring the performance as a function of time and bias voltage. Additionally, direct sensor-level tests were performed on the affected channels. The inter-strip resistance and bias resistance tests showed low values, indicating a temporary loss of the inter-strip isolation. A subsequent recovery of the noise performance was observed. We present the test details, an analysis of how the inter-strip isolation affects the module noise, and the relationship with sensor-level quality control tests.
Address [Helling, C.; Affolder, A. A.; Fadeyev, V.; Galloway, Z.; Gignac, M.; Gunnell, J.; Martinez-Mckinney, F.; Kang, N.; Yarwick, J.] Univ Calif Santa Cruz, Santa Cruz Inst Particle Phys, Santa Cruz, CA 95064 USA, Email: fadeyev@ucsc.edu
Corporate Author Thesis
Publisher Elsevier Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:000560076700015 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 4505
Permanent link to this record
 
 
Author (down) Grkovski, M.; Brzezinski, K.; Cindro, V.; Clinthorne, N.H.; Kagan, H.; Lacasta, C.; Mikuz, M.; Solaz, C.; Studen, A.; Weilhammer, P.; Zontar, D.
Title Evaluation of a high resolution silicon PET insert module Type Journal Article
Year 2015 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 788 Issue Pages 86-94
Keywords Positron emission tomography; Silicon detectors; PET insert; Image reconstruction
Abstract Conventional PET systems can be augmented with additional detectors placed in close proximity of the region of interest. We developed a high resolution PET insert module to evaluate the added benefit of such a combination. The insert module consists of two back-to-back 1 mm thick silicon sensors, each segmented into 1040 1 mm(2) pads arranged in a 40 by 26 array. A set of 16 VATAGP7.1 ASICs and a custom assembled data acquisition board were used to read out the signal from the insert module. Data were acquired in slice (20) geometry with a Jaszczak phantom (rod diameters of 12-4.8 mm) Filled with F-18-FDG and the images were reconstructed with ML-EM method. Both data with full and limited angular coverage from the insert module were considered and three types of coincidence events were combined. The ratio of high-resolution data that substantially improves quality of the reconstructed image for the region near the surface of the insert module was estimated to be about 4%. Results from our previous studies suggest that such ratio could be achieved at a moderate technological expense by using an equivalent of two insert modules (an effective sensor thickness of 4 mm).
Address [Grkovski, Milan; Cindro, Vladimir; Mikuz, Marko; Studen, Andrej; Zontar, Dejan] Jozef Stefan Inst, Ljubljana, Slovenia, Email: milan.grkovski@ijs.si
Corporate Author Thesis
Publisher Elsevier Science Bv Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:000354870700016 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 2232
Permanent link to this record
 
 
Author (down) Goasduff, A. et al; Gadea, A.
Title The GALILEO gamma-ray array at the Legnaro National Laboratories Type Journal Article
Year 2021 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 1015 Issue Pages 165753 - 15pp
Keywords High-resolution gamma-ray spectroscopy; HPGe; Silicon; Neutron; Electronics; DAQ
Abstract GALILEO, a new 4 pi high-resolution gamma-detection array, based on HPGe detectors, has been developed and installed at the Legnaro National Laboratories. The GALILEO array greatly benefits from a fully-digital readout chain, customized DAQ, and a variety of complementary detectors to improve the resolving power by the detection of particles, ions or high-energy gamma-ray transitions. In this work, a full description of the array, including electronics and DAQ, is presented together with its complementary instrumentation.
Address [Goasduff, A.; Valiente-Dobon, J. J.; Barrientos, D.; Biasotto, M.; Brugnara, D.; Cocconi, P.; Cortes, M. L.; de Angelis, G.; Egea, F. J.; Fantinel, S.; Gambalonga, A.; Gottardo, A.; Gozzelino, A.; Gregor, E. T.; Gulmini, M.; Hadynska-Klek, K.; Illana, A.; Jaworski, G.; Napoli, D. R.; Pellumaj, J.; Perez-Vidal, R. M.; Rosso, D.; Siciliano, M.; Toniolo, N.; Volpe, V.; Zanon, I] INFN Lab Nazl Legnaro, Legnaro, Italy, Email: alain.goasduff@lnl.infn.it
Corporate Author Thesis
Publisher Elsevier Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:000717077900015 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 5025
Permanent link to this record
 
 
Author (down) Fernandez-Tejero, J.; Bartl, U.; Docke, M.; Fadeyev, V.; Fleta, C.; Hacker, J.; Hommels, B.; Lacasta, C.; Parzefall, U.; Soldevila, U.; Stocker, G.; Ullan, M.; Unno, Y.
Title Design and evaluation of large area strip sensor prototypes for the ATLAS Inner Tracker detector Type Journal Article
Year 2020 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 981 Issue Pages 164536 - 6pp
Keywords ATLAS; Silicon strip sensors; Large area silicon sensors; Layout design; Prototype evaluation; Market survey
Abstract The ATLAS community is facing the last stages prior to the production of the upgraded silicon strip Inner Tracker for the High-Luminosity Large Hadron Collider. An extensive Market Survey was carried out in order to evaluate the capability of different foundries to fabricate large area silicon strip sensors, satisfying the ATLAS specifications. The semiconductor manufacturing company, Infineon Technologies AG, was one of the two foundries, along with Hamamatsu Photonics K.K., that reached the last stage of the evaluation for the production of the new devices. The full prototype wafer layout for the participation of Infineon, called ATLAS17LS-IFX, was designed using a newly developed Python-based Automatic Layout Generation Tool, able to rapidly design sensors with different characteristics and dimensions based on a few geometrical and technological input parameters. This work presents the layout design process and the results obtained from the evaluation of the new Infineon large area sensors before and after proton and neutron irradiations, up to fluences expected in the inner layers of the future ATLAS detector.
Address [Fernandez-Tejero, J.; Fleta, C.; Ullan, M.] CSIC, Ctr Nacl Microelect IMB CNM, Campus UAB Bellaterra, Barcelona 08193, Spain, Email: Xavi.Fdez@cern.ch
Corporate Author Thesis
Publisher Elsevier Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:000581799800023 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 4579
Permanent link to this record
 
 
Author (down) Fernandez-Tejero, J. et al; Soldevila, U.
Title Humidity sensitivity of large area silicon sensors: Study and implications Type Journal Article
Year 2020 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 978 Issue Pages 164406 - 6pp
Keywords Humidity sensitivity; Large area silicon sensors; Slim-edge; HL-LHC
Abstract The production of large area sensors is one of the main challenges that the ATLAS collaboration faces for the new Inner-Tracker full-silicon detector. During the prototype fabrication phase for the High Luminosity Large Hadron Collider upgrade, several ATLAS institutes observed indications of humidity sensitivity of large area sensors, even at relative humidities well below the dew point. Specifically, prototype Barrel and End-Cap silicon strip sensors fabricated in 6-inch wafers manifest a prompt decrease of the breakdown voltage when operating under high relative humidity, adversely affecting the performance of the sensors. In addition to the investigation of these prototype sensors, a specific fabrication batch with special passivation is also studied, allowing for a deeper understanding of the responsible mechanisms. This work presents an extensive study of this behaviour on large area sensors. The locations of the hotspots at the breakdown voltage at high humidity are revealed using different infrared thermography techniques. Several palliative treatments are attempted, proving the influence of sensor cleaning methods, as well as baking, on the device performance, but no improvement on the humidity sensitivity was achieved. Furthermore, a study of the incidence of the sensitivity in different batches is also presented, introducing a hypothesis of the origins of the humidity sensitivity associated to the sensor edge design, together with passivation thickness and conformity. Several actions to be taken during sensor production and assembly are extracted from this study, in order to minimize the impact of humidity sensitivity on the performance of large area silicon sensors for High Energy Physics experiments.
Address [Fernandez-Tejero, J.; Avino, O.; Fleta, C.; Ullan, M.; Vellvehi, M.] CSIC, Ctr Nacl Microelect IMB CNM, Campus UAB Bellaterra, Barcelona 08193, Spain, Email: Xavi.Fdez@cern.ch
Corporate Author Thesis
Publisher Elsevier Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:000560076700009 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 4504
Permanent link to this record
 
 
Author (down) Etxebeste, A.; Barrio, J.; Muñoz, E.; Oliver, J.F.; Solaz, C.; Llosa, G.
Title 3D position determination in monolithic crystals coupled to SiPMs for PET Type Journal Article
Year 2016 Publication Physics in Medicine and Biology Abbreviated Journal Phys. Med. Biol.
Volume 61 Issue 10 Pages 3914-3934
Keywords monolithic crystal; silicon photomultiplier; depth of interaction
Abstract The interest in using continuous monolithic crystals in positron emission tomography (PET) has grown in the last years. Coupled to silicon photomultipliers (SiPMs), the detector can combine high sensitivity and high resolution, the two main factors to be maximized in a positron emission tomograph. In this work, the position determination capability of a detector comprised of a 12 x 12 x 10 mm(3) LYSO crystal coupled to an 8 x 8-pixel array of SiPMs is evaluated. The 3D interaction position of.-rays is estimated using an analytical model of the light distribution including reflections on the facets of the crystal. Monte Carlo simulations have been performed to evaluate different crystal reflectors and geometries. The method has been characterized and applied to different cases. Intrinsic resolution obtained with the position estimation method used in this work, applied to experimental data, achieves sub-millimetre resolution values. Average resolution over the detector surface for 5 mm thick crystal is similar to 0.9 mm FWHM and similar to 1.2 mm FWHM for 10 mm thick crystal. Depth of interaction resolution is close to 2 mm FWHM in both cases, while the FWTM is similar to 5.3 mm for 5 mm thick crystal and similar to 9.6 mm for 10 mm thick crystal.
Address [Etxebeste, Ane; Barrio, John; Munoz, Enrique; Oliver, Josep F.; Solaz, Carles; Llosa, Gabriela] Univ Valencia, CSIC, Inst Fis Corpuscular, Valencia, Spain, Email: ane.etxebeste@ific.uv.es
Corporate Author Thesis
Publisher Iop Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0031-9155 ISBN Medium
Area Expedition Conference
Notes WOS:000376792800014 Approved no
Is ISI yes International Collaboration no
Call Number IFIC @ pastor @ Serial 2708
Permanent link to this record
 
 
Author (down) Clinthorne, N.; Brzezinski, K.; Chesi, E.; Cochran, E.; Grkovski, M.; Grosicar, B.; Honscheid, K.; Huh, S.; Kagan, H.; Lacasta, C.; Linhart, V.; Mikuz, M.; Smith, D.S.; Stankova, V.; Studen, A.; Weilhammer, P.; Zontar, D.
Title Silicon as an unconventional detector in positron emission tomography Type Journal Article
Year 2013 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 699 Issue Pages 216-220
Keywords PET; Silicon detectors; Multiresolution imaging; Magnifying PET
Abstract Positron emission tomography (PET) is a widely used technique in medical imaging and in studying small animal models of human disease. In the conventional approach, the 511 keV annihilation photons emitted from a patient or small animal are detected by a ring of scintillators such as LYSO read out by arrays of photodetectors. Although this has been successful in achieving similar to 5 mm FWHM spatial resolution in human studies and similar to 1 mm resolution in dedicated small animal instruments, there is interest in significantly improving these figures. Silicon, although its stopping power is modest for 511 keV photons, offers a number of potential advantages over more conventional approaches including the potential for high intrinsic spatial resolution in 3D. To evaluate silicon in a variety of PET “magnifying glass” configurations, an instrument was constructed that consists of an outer partial-ring of PET scintillation detectors into which various arrangements of silicon detectors are inserted to emulate dual-ring or imaging probe geometries. Measurements using the test instrument demonstrated the capability of clearly resolving point sources of Na-22 having a 1.5 mm center-to-center spacing as well as the 1.2 mm rods of a F-18-filled resolution phantom. Although many challenges remain, silicon has potential to become the PET detector of choice when spatial resolution is the primary consideration. (C) 2012 Elsevier B.V. All rights reserved.
Address [Clinthorne, Neal; Huh, Sam] Univ Michigan, Dept Radiol, Ann Arbor, MI 48109 USA, Email: nclintho@umich.edu
Corporate Author Thesis
Publisher Elsevier Science Bv Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:000312809200045 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 1290
Permanent link to this record