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Viegas, R., Roser, J., Barrientos, L., Borja-Lloret, M., Casaña, J. V., Lopez, J. G., et al. (2023). Characterization of a Compton camera based on the TOFPET2 ASIC. Radiat. Phys. Chem., 202, 110507–11pp.
Abstract: The use of Compton cameras for medical imaging and its interest as a hadron therapy treatment monitoring has increased in the last decade with the development of silicon photomultipliers. MACACOp is a Compton camera prototype designed and assembled at the IRIS group of IFIC-Valencia. This Compton camera is based on monolithic Lanthanum (III) Bromide crystals and silicon photomultipliers, and employs the novel TOFPET2 ASIC as readout electronics. This system emerged as an alternative to MACACO II prototype, with the aim of improving its limited time resolution. To test the performance of the ASIC in a Compton camera setup, the prototype was characterized, both in laboratory and in-beam. A time resolution of 1.5 ns was obtained after time corrections, which improves greatly the performance of the MACACO II. Moreover, the results obtained at high photon energies demonstrate the ability of the system to obtain 1 mm displacements of the reconstructed spots. The results reinforce the potential of the system as a monitoring device for hadron therapy.
Keywords: Compton camera; Hadron therapy; LaBr3; PETsys TOFPET2; Silicon photomultipliers
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Unno, Y. et al, Garcia, C., Jimenez, J., Lacasta, C., Marti-Garcia, S., & Soldevila, U. (2014). Development of n(+) -in-p large-area silicon microstrip sensors for very high radiation environments-ATLAS12 design and initial results. Nucl. Instrum. Methods Phys. Res. A, 765, 80–90.
Abstract: We have been developing a novel radiation tolerant n(+)-in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float zone wafers, where large area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 pm and slim edge space of 450 pm, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers.
Keywords: Silicon strip; n(+)-in-p; P-type; Radiation-tolerant; HL-LHC; PTP
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Ullan, M., Benitez, V., Quirion, D., Zabala, M., Pellegrini, G., Lozano, M., et al. (2014). Low-resistance strip sensors for beam-loss event protection. Nucl. Instrum. Methods Phys. Res. A, 765, 252–257.
Abstract: AC coupled silicon strip sensors can be damaged in case of a beam loss due to the possibility of a large charge accumulation in the bulk, developing very high voltages across the coupling capacitors which can destroy them. Punch-through structures are currently used to avoid this problem helping to evacuate the accumulated charge as large voltages are developing. Nevertheless, previous experiments, performed with laser pulses, have shown that these structures can become ineffective in relatively long strips. The large value of the implant resistance can effectively isolate the “far” end of the strip from the punchthrough structure leading to large voltages. We present here our developments to fabricate lowresistance strip sensors to avoid this problem. The deposition of a conducting material in contact with the implants drastically reduces the strip resistance, assuring the effectiveness of the punch-through structures. First devices have been fabricated with this new technology. Initial results with laser tests show the expected reduction in peak voltages on the low resistivity implants. Other aspects of the sensor performance, including the signal formation, are not affected by the new technology.
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Studen, A., Chesi, E., Cindro, V., Clinthorne, N. H., Cochran, E., Grosicar, B., et al. (2011). A silicon PET probe. Nucl. Instrum. Methods Phys. Res. A, 648, S255–S258.
Abstract: PET scanners with high spatial resolution offer a great potential in improving diagnosis, therapy monitoring and treatment validation for several severe diseases. One way to improve resolution of a PET scanner is to extend a conventional PET ring with a small probe with excellent spatial resolution. The probe is intended to be placed close to the area of interest. The coincidences of interactions within the probe and the external ring provide a subset of data which combined with data from external ring, greatly improve resolution in the area viewed by the probe. Our collaboration is developing a prototype of a PET probe, composed of high-resolution silicon pad detectors. The detectors are 1 mm thick, measuring 40 by 26 mm(2), and several such sensors are envisaged to either compensate for low stopping power of silicon or increase the area covered by the probe. The sensors are segmented into 1 mm(3) cubic voxels, giving 1040 readout pads per sensor. A module is composed of two sensors placed in a back-to-back configuration, allowing for stacking fraction of up to 70% within a module. The pads are coupled to a set of 16 ASICs (VaTaGP7.1 by IDEAS) per module and read out through a custom designed data acquisition board, allowing for trigger and data interfacing with the external ring. This paper presents an overview of probe requirements and expected performance parameters. It will focus on the characteristics of the silicon modules and their impact on overall probe performance, including spatial resolution, energy resolution and timing resolution. We will show that 1 mm(3) voxels will significantly extend the spatial resolution of conventional PET rings, and that broadening of timing resolution related to varying depth of photon interactions can be compensated to match the timing resolution of the external ring. The initial test results of the probe will also be presented.
Keywords: PET; Silicon detectors
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Studen, A., Brzezinski, K., Chesi, E., Cindro, V., Clinthorne, N. H., Cochran, E., et al. (2013). Silicon detectors for combined MR-PET and MR-SPECT imaging. Nucl. Instrum. Methods Phys. Res. A, 702, 88–90.
Abstract: Silicon based devices can extend PET-MR and SPECT-MR imaging to applications, where their advantages in performance outweigh benefits of high statistical counts. Silicon is in many ways an excellent detector material with numerous advantages, among others: excellent energy and spatial resolution, mature processing technology, large signal to noise ratio, relatively low price, availability, versatility and malleability. The signal in silicon is also immune to effects of magnetic field at the level normally used in MR devices. Tests in fields up to 7 T were performed in a study to determine effects of magnetic field on positron range in a silicon PET device. The curvature of positron tracks in direction perpendicular to the field's orientation shortens the distance between emission and annihilation point of the positron. The effect can be fully appreciated for a rotation of the sample for a fixed field direction, compressing range in all dimensions. A popular Ga-68 source was used showing a factor of 2 improvement in image noise compared to zero field operation. There was also a little increase in noise as the reconstructed resolution varied between 2.5 and 1.5 mm. A speculative applications can be recognized in both emission modalities, SPECT and PET. Compton camera is a subspecies of SPECT, where a silicon based scatter as a MR compatible part could inserted into the MR bore and the secondary detector could operate in less constrained environment away from the magnet. Introducing a Compton camera also relaxes requirements of the radiotracers used, extending the range of conceivable photon energies beyond 140.5 keV of the Tc-99m. In PET, one could exploit the compressed sub-millimeter range of positrons in the magnetic field. To exploit the advantage, detectors with spatial resolution commensurate to the effect must be used with silicon being an excellent candidate. Measurements performed outside of the MR achieving spatial resolution below 1 mm are reported.
Keywords: PET; Silicon detectors; SPECT
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