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Author (up) Briz, J.A.; Nerio, A.N.; Ballesteros, C.; Borge, M.J.G.; Martinez, P.; Perea, A.; Tavora, V.G.; Tengblad, O.; Ciemala, M.; Maj, A.; Olko, P.; Parol, W.; Pedracka, A.; Sowicki, B.; Zieblinski, M.; Nacher, E.
Title Proton Radiographs Using Position-Sensitive Silicon Detectors and High-Resolution Scintillators Type Journal Article
Year 2022 Publication IEEE Transactions on Nuclear Science Abbreviated Journal IEEE Trans. Nucl. Sci.
Volume 69 Issue 4 Pages 696-702
Keywords LaBr3; particle tracking; proton computed tomography (pCT); proton radiograph; proton therapy; scintillation detectors; silicon detectors
Abstract Proton therapy is a cancer treatment technique currently in growth since it offers advantages with respect to conventional X-ray and gamma-ray radiotherapy. In particular, better control of the dose deposition allowing to reach higher conformity in the treatments causing less secondary effects. However, in order to take full advantage of its potential, improvements in treatment planning and dose verification are required. A new prototype of proton computed tomography scanner is proposed to design more accurate and precise treatment plans for proton therapy. Our prototype is formed by double-sided silicon strip detectors and scintillators of LaBr3(Ce) with high energy resolution and fast response. Here, the results obtained from an experiment performed using a 100-MeV proton beam are presented. Proton radiographs of polymethyl methacrylate (PMMA) samples of 50-mm thickness with spatial patterns in aluminum were taken. Their properties were studied, including reproduction of the dimensions, spatial resolution, and sensitivity to different materials. Structures of up to 2 mm are well resolved and the sensitivity of the system was enough to distinguish the thicknesses of 10 mm of aluminum or PMMA. The spatial resolution of the images was 0.3 line pairs per mm (MTF-10%). This constitutes the first step to validate the device as a proton radiography scanner.
Address [Briz, J. A.; Nerio, A. N.; Ballesteros, C.; Borge, M. J. G.; Martinez, P.; Perea, A.; Tavora, V. G.; Tengblad, O.] Inst Estruct Mat CSIC, Madrid 28006, Spain, Email: jose.briz@csic.es
Corporate Author Thesis
Publisher Ieee-Inst Electrical Electronics Engineers Inc Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0018-9499 ISBN Medium
Area Expedition Conference
Notes WOS:000803113800017 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 5245
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Author (up) Capra, S.; Mengoni, D.; Dueñas, J.A.; John, P.R.; Gadea, A.; Aliaga, R.J.; Dormard, J.J.; Assie, M.; Pullia, A.
Title Performance of the new integrated front-end electronics of the TRACE array commissioned with an early silicon detector prototype Type Journal Article
Year 2019 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 935 Issue Pages 178-184
Keywords ASIC; Charge-sensitive preamplifier; Low-noise applications; Particle spectrometry; Dead time; Silicon detector
Abstract The spectroscopic performances of the new integrated ASIC (Application-Specific Integrated Circuit) preamplifiers for highly segmented silicon detectors have been evaluated with an early silicon detector prototype of the TRacking Array for light Charged Ejectiles (TRACE). The ASICS were mounted on a custom-designed PCB (Printed Circuit Board) and the detector plugged on it. Energy resolution tests, performed on the same detector before and after irradiation, yielded a resolution of 21 keV and 33 keV FWHM respectively. The output signals were acquired with an array of commercial 100-MHz 14-bit digitizers. The preamplifier chip is equipped with an innovative Fast-Reset device that has two functions: it reduces dramatically the dead time of the preamplifier in case of saturation (from milliseconds to microseconds) and extends the spectroscopic dynamic range of the preamplifier by more than one order of magnitude. Other key points of the device are the low noise and the wide bandwidth.
Address [Capra, S.; Pullia, A.] Univ Milan, Dipartimento Fis, Via Celoria 16, IT-20133 Milan, Italy, Email: stefano.capra@unimi.it
Corporate Author Thesis
Publisher Elsevier Science Bv Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:000470063800026 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 4042
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Author (up) Clinthorne, N.; Brzezinski, K.; Chesi, E.; Cochran, E.; Grkovski, M.; Grosicar, B.; Honscheid, K.; Huh, S.; Kagan, H.; Lacasta, C.; Linhart, V.; Mikuz, M.; Smith, D.S.; Stankova, V.; Studen, A.; Weilhammer, P.; Zontar, D.
Title Silicon as an unconventional detector in positron emission tomography Type Journal Article
Year 2013 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 699 Issue Pages 216-220
Keywords PET; Silicon detectors; Multiresolution imaging; Magnifying PET
Abstract Positron emission tomography (PET) is a widely used technique in medical imaging and in studying small animal models of human disease. In the conventional approach, the 511 keV annihilation photons emitted from a patient or small animal are detected by a ring of scintillators such as LYSO read out by arrays of photodetectors. Although this has been successful in achieving similar to 5 mm FWHM spatial resolution in human studies and similar to 1 mm resolution in dedicated small animal instruments, there is interest in significantly improving these figures. Silicon, although its stopping power is modest for 511 keV photons, offers a number of potential advantages over more conventional approaches including the potential for high intrinsic spatial resolution in 3D. To evaluate silicon in a variety of PET “magnifying glass” configurations, an instrument was constructed that consists of an outer partial-ring of PET scintillation detectors into which various arrangements of silicon detectors are inserted to emulate dual-ring or imaging probe geometries. Measurements using the test instrument demonstrated the capability of clearly resolving point sources of Na-22 having a 1.5 mm center-to-center spacing as well as the 1.2 mm rods of a F-18-filled resolution phantom. Although many challenges remain, silicon has potential to become the PET detector of choice when spatial resolution is the primary consideration. (C) 2012 Elsevier B.V. All rights reserved.
Address [Clinthorne, Neal; Huh, Sam] Univ Michigan, Dept Radiol, Ann Arbor, MI 48109 USA, Email: nclintho@umich.edu
Corporate Author Thesis
Publisher Elsevier Science Bv Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:000312809200045 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 1290
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Author (up) Etxebeste, A.; Barrio, J.; Muñoz, E.; Oliver, J.F.; Solaz, C.; Llosa, G.
Title 3D position determination in monolithic crystals coupled to SiPMs for PET Type Journal Article
Year 2016 Publication Physics in Medicine and Biology Abbreviated Journal Phys. Med. Biol.
Volume 61 Issue 10 Pages 3914-3934
Keywords monolithic crystal; silicon photomultiplier; depth of interaction
Abstract The interest in using continuous monolithic crystals in positron emission tomography (PET) has grown in the last years. Coupled to silicon photomultipliers (SiPMs), the detector can combine high sensitivity and high resolution, the two main factors to be maximized in a positron emission tomograph. In this work, the position determination capability of a detector comprised of a 12 x 12 x 10 mm(3) LYSO crystal coupled to an 8 x 8-pixel array of SiPMs is evaluated. The 3D interaction position of.-rays is estimated using an analytical model of the light distribution including reflections on the facets of the crystal. Monte Carlo simulations have been performed to evaluate different crystal reflectors and geometries. The method has been characterized and applied to different cases. Intrinsic resolution obtained with the position estimation method used in this work, applied to experimental data, achieves sub-millimetre resolution values. Average resolution over the detector surface for 5 mm thick crystal is similar to 0.9 mm FWHM and similar to 1.2 mm FWHM for 10 mm thick crystal. Depth of interaction resolution is close to 2 mm FWHM in both cases, while the FWTM is similar to 5.3 mm for 5 mm thick crystal and similar to 9.6 mm for 10 mm thick crystal.
Address [Etxebeste, Ane; Barrio, John; Munoz, Enrique; Oliver, Josep F.; Solaz, Carles; Llosa, Gabriela] Univ Valencia, CSIC, Inst Fis Corpuscular, Valencia, Spain, Email: ane.etxebeste@ific.uv.es
Corporate Author Thesis
Publisher Iop Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0031-9155 ISBN Medium
Area Expedition Conference
Notes WOS:000376792800014 Approved no
Is ISI yes International Collaboration no
Call Number IFIC @ pastor @ Serial 2708
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Author (up) Fernandez-Tejero, J. et al; Soldevila, U.
Title Humidity sensitivity of large area silicon sensors: Study and implications Type Journal Article
Year 2020 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 978 Issue Pages 164406 - 6pp
Keywords Humidity sensitivity; Large area silicon sensors; Slim-edge; HL-LHC
Abstract The production of large area sensors is one of the main challenges that the ATLAS collaboration faces for the new Inner-Tracker full-silicon detector. During the prototype fabrication phase for the High Luminosity Large Hadron Collider upgrade, several ATLAS institutes observed indications of humidity sensitivity of large area sensors, even at relative humidities well below the dew point. Specifically, prototype Barrel and End-Cap silicon strip sensors fabricated in 6-inch wafers manifest a prompt decrease of the breakdown voltage when operating under high relative humidity, adversely affecting the performance of the sensors. In addition to the investigation of these prototype sensors, a specific fabrication batch with special passivation is also studied, allowing for a deeper understanding of the responsible mechanisms. This work presents an extensive study of this behaviour on large area sensors. The locations of the hotspots at the breakdown voltage at high humidity are revealed using different infrared thermography techniques. Several palliative treatments are attempted, proving the influence of sensor cleaning methods, as well as baking, on the device performance, but no improvement on the humidity sensitivity was achieved. Furthermore, a study of the incidence of the sensitivity in different batches is also presented, introducing a hypothesis of the origins of the humidity sensitivity associated to the sensor edge design, together with passivation thickness and conformity. Several actions to be taken during sensor production and assembly are extracted from this study, in order to minimize the impact of humidity sensitivity on the performance of large area silicon sensors for High Energy Physics experiments.
Address [Fernandez-Tejero, J.; Avino, O.; Fleta, C.; Ullan, M.; Vellvehi, M.] CSIC, Ctr Nacl Microelect IMB CNM, Campus UAB Bellaterra, Barcelona 08193, Spain, Email: Xavi.Fdez@cern.ch
Corporate Author Thesis
Publisher Elsevier Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:000560076700009 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 4504
Permanent link to this record