|
Benitez, V. et al, Bernabeu, J., Garcia, C., Lacasta, C., Marco, R., Rodriguez, D., et al. (2016). Sensors for the End-cap prototype of the Inner Tracker in the ATLAS Detector Upgrade. Nucl. Instrum. Methods Phys. Res. A, 833, 226–232.
Abstract: The new silicon microstrip sensors of the End-cap part of the HL-LHC ATLAS Inner Tracker (ITk) present a number of challenges due to their complex design features such as the multiple different sensor shapes, the varying strip pitch, or the built-In stereo angle. In order to investigate these specific problems, the “petalet” prototype was defined as a small End-cap prototype. The sensors for the petalet prototype include several new layout and technological solutions to investigate the issues, they have been tested in detail by the collaboration. The sensor description and detailed test results are presented in this paper. New software tools have been developed for the automatic layout generation of the complex designs. The sensors have been fabricated, characterized and delivered to the institutes in the collaboration for their assembly on petalet prototypes. This paper describes the lessons learnt from the design and tests of the new solutions implemented on these sensors, which are being used for the full petal sensor development. This has resulted in the ITIc strip, community acquiring the necessary expertise to develop the full End-cap structure, the petal.
|
|
|
Miñano, M. (2011). Radiation Hard Silicon Strips Detectors for the SLHC. IEEE Trans. Nucl. Sci., 58(3), 1135–1140.
Abstract: While the Large Hadron Collider (LHC) began taking data in 2009, scenarios for a machine upgrade to achieve a much higher luminosity are being developed. In the current planning, it is foreseen to increase the luminosity of the LHC at CERN around 2018. As radiation damage scales with integrated luminosity, the particle physics experiments will need to be equipped with a new generation of radiation hard detectors. This article reports on the status of the R&D projects on radiation hard silicon strips detectors for particle physics, linked to the Large Hadron Collider Upgrade, super-LHC (sLHC) of the ATLAS microstrip detector. The primary focus of this report is on measuring the radiation hardness of the silicon materials and the detectors under study. This involves designing silicon detectors, irradiating them to the sLHC radiation levels and studying their performance as particle detectors. The most promising silicon detector for the different radiation levels in the different regions of the ATLAS microstrip detector will be presented. Important challenges related to engineering layout, powering, cooling and reading out a very large strip detector are presented. Ideas on possible schemes for the layout and support mechanics will be shown.
|
|
|
NEXT Collaboration(Trindade, A. M. F. et al), Alvarez, V., Benlloch-Rodriguez, J. M., Botas, A., Carcel, S., Carrion, J. V., et al. (2018). Study of the loss of xenon scintillation in xenon-trimethylamine mixtures. Nucl. Instrum. Methods Phys. Res. A, 905, 22–28.
Abstract: This work investigates the capability of TMA ((CH3)(3)N) molecules to shift the wavelength of Xe VUV emission (160-188 nm) to a longer, more manageable, wavelength (260-350 nm). Light emitted from a Xe lamp was passed through a gas chamber filled with Xe-TMA mixtures at 800 Torr and detected with a photomultiplier tube. Using bandpass filters in the proper transmission ranges, no reemitted light was observed experimentally. Considering the detection limit of the experimental system, if reemission by TMA molecules occurs, it is below 0.3% of the scintillation absorbed in the 160-188 nm range. An absorption coefficient value for xenon VUV light by TMA of 0.43 +/- 0.03 cm(-1) Torr(-1) was also obtained. These results can be especially important for experiments considering TMA as a molecular additive to Xe in large volume optical time projection chambers.
|
|
|
Ullan, M., Benitez, V., Quirion, D., Zabala, M., Pellegrini, G., Lozano, M., et al. (2014). Low-resistance strip sensors for beam-loss event protection. Nucl. Instrum. Methods Phys. Res. A, 765, 252–257.
Abstract: AC coupled silicon strip sensors can be damaged in case of a beam loss due to the possibility of a large charge accumulation in the bulk, developing very high voltages across the coupling capacitors which can destroy them. Punch-through structures are currently used to avoid this problem helping to evacuate the accumulated charge as large voltages are developing. Nevertheless, previous experiments, performed with laser pulses, have shown that these structures can become ineffective in relatively long strips. The large value of the implant resistance can effectively isolate the “far” end of the strip from the punchthrough structure leading to large voltages. We present here our developments to fabricate lowresistance strip sensors to avoid this problem. The deposition of a conducting material in contact with the implants drastically reduces the strip resistance, assuring the effectiveness of the punch-through structures. First devices have been fabricated with this new technology. Initial results with laser tests show the expected reduction in peak voltages on the low resistivity implants. Other aspects of the sensor performance, including the signal formation, are not affected by the new technology.
|
|