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NEXT Collaboration(Mistry, K. et al), Carcel, S., Lopez-March, N., Martin-Albo, J., Novella, P., Querol, M., et al. (2024). Design, characterization and installation of the NEXT-100 cathode and electroluminescence regions. J. Instrum., 19(2), P02007–36pp.
Abstract: NEXT -100 is currently being constructed at the Laboratorio Subterraneo de Canfranc in the Spanish Pyrenees and will search for neutrinoless double beta decay using a high-pressure gaseous time projection chamber (TPC) with 100 kg of xenon. Charge amplification is carried out via electroluminescence (EL) which is the process of accelerating electrons in a high electric field region causing secondary scintillation of the medium proportional to the initial charge. The NEXT -100 EL and cathode regions are made from tensioned hexagonal meshes of 1 m diameter. This paper describes the design, characterization, and installation of these parts for NEXT -100. Simulations of the electric field are performed to model the drift and amplification of ionization electrons produced in the detector under various EL region alignments and rotations. Measurements of the electrostatic breakdown voltage in air characterize performance under high voltage conditions and identify breakdown points. The electrostatic deflection of the mesh is quantified and fit to a first -pr inciples mechanical model. Measurements were performed with both a standalone test EL region and with the NEXT-100 EL region before its installation in the detector. Finally, we describe the parts as installed in NEXT-100, following their deployment in Summer 2023.
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Poley, L., Blue, A., Bloch, I., Buttar, C., Fadeyev, V., Fernandez-Tejero, J., et al. (2019). Mapping the depleted area of silicon diodes using a micro-focused X-ray beam. J. Instrum., 14, P03024–14pp.
Abstract: For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker (ITk). The ITk will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of 500V to maintain a low noise and power dissipation. In order to minimise sensor leakage currents, particularly in the high-radiation environment inside the ATLAS detector, sensors are foreseen to be operated at low temperatures and to be manufactured from wafers with a high bulk resistivity of several k Omega.cm. Simulations showed the electric field inside sensors with high bulk resistivity to extend towards the sensor edge, which could lead to increased surface currents for narrow dicing edges. In order to map the electric field inside biased silicon sensors with high bulk resistivity, three diodes from ATLAS silicon strip sensor prototype wafers were studied with a monochromatic, micro-focused X-ray beam at the Diamond Light Source (Didcot, U.K.). For all devices under investigation, the electric field inside the diode was mapped and its dependence on the applied bias voltage was studied.
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Poley, L., Stolzenberg, U., Schwenker, B., Frey, A., Gottlicher, P., Marinas, C., et al. (2021). Mapping the material distribution of a complex structure in an electron beam. J. Instrum., 16(1), P01010–33pp.
Abstract: The simulation and analysis of High Energy Physics experiments require a realistic simulation of the detector material and its distribution. The challenge is to describe all active and passive parts of large scale detectors like ATLAS in terms of their size, position and material composition. The common method for estimating the radiation length by weighing individual components, adding up their contributions and averaging the resulting material distribution over extended structures provides a good general estimate, but can deviate significantly from the material actually present. A method has been developed to assess its material distribution with high spatial resolution using the reconstructed scattering angles and hit positions of high energy electron tracks traversing an object under investigation. The study presented here shows measurements for an extended structure with a highly inhomogeneous material distribution. The structure under investigation is an End-of-Substructure-card prototype designed for the ATLAS Inner Tracker strip tracker – a PCB populated with components of a large range of material budgets and sizes. The measurements presented here summarise requirements for data samples and reconstructed electron tracks for reliable image reconstruction of large scale, inhomogeneous samples, choices of pixel sizes compared to the size of features under investigation as well as a bremsstrahlung correction for high material densities and thicknesses.
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Poley, L. et al, Bernabeu, J., Civera, J. V., Lacasta, C., Leon, P., Platero, A., et al. (2020). The ABC130 barrel module prototyping programme for the ATLAS strip tracker. J. Instrum., 15(9), P09004–78pp.
Abstract: For the Phase-II Upgrade of the ATLAS Detector [1], its Inner Detector, consisting of silicon pixel, silicon strip and transition radiation sub-detectors, will be replaced with an all new 100% silicon tracker, composed of a pixel tracker at inner radii and a strip tracker at outer radii. The future ATLAS strip tracker will include 11,000 silicon sensor modules in the central region (barrel) and 7,000 modules in the forward region (end-caps), which are foreseen to be constructed over a period of 3.5 years. The construction of each module consists of a series of assembly and quality control steps, which were engineered to be identical for all production sites. In order to develop the tooling and procedures for assembly and testing of these modules, two series of major prototyping programs were conducted: an early program using readout chips designed using a 250 nm fabrication process (ABCN-250) [2, 3] and a subsequent program using a follow-up chip set made using 130 nm processing (ABC130 and HCC130 chips). This second generation of readout chips was used for an extensive prototyping program that produced around 100 barrel-type modules and contributed significantly to the development of the final module layout. This paper gives an overview of the components used in ABC130 barrel modules, their assembly procedure and findings resulting from their tests.
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Ros, A., Lerche, C. W., Sebastia, A., Sanchez, F., & Benlloch, J. M. (2014). Retroreflector arrays for better light collection efficiency of gamma-ray imaging detectors with continuous scintillation crystals without DOI misestimation. J. Instrum., 9, P04009–14pp.
Abstract: A method to improve light collection efficiency of gamma-ray imaging detectors by using retroreflector arrays has been tested, simulations of the behaviour of the scintillation light illuminating the retroreflector surface have been made. Measurements including retroreflector arrays in the setup have also been taken. For the measurements, positron emission tomography (PET) detectors with continuous scintillation crystals have been used. Each detector module consists of a continuous LSO-scintillator of dimensions 49x49x10 mm(3) and a H8500 position-sensitive photo-multiplier (PSPMT) from Hamamatsu. By using a continuous scintillation crystal, the scintillation light distribution has not been destroyed and the energy, the centroids along the x- and y-direction and the depth of interaction (DOI) can be estimated. Simulations have also been run taking into account the use of continuous scintillation crystals. Due to the geometry of the continuous scintillation crystals in comparison with pixelated crystals, a good light collection efficiency is necessary to correctly reconstruct the impact point of the gamma-ray. The aim of this study is to investigate whether micro-machine retro-reflectors improve light yield without misestimation of the impact point. The results shows an improvement on the energy and centroid resolutions without worsening the depth of interaction resolution. Therefore it can be concluded that using retroreflector arrays at the entrance side of the scintillation crystal improves light collection efficiency without worsening the impact point estimation.
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