Abstract: We discuss a scenario of the type-II two-Higgs- doublet model (2HDM) in which the b (b) over bar gamma gamma rate of the Higgs pair production is enhanced due to the two nearly degenerate 125 GeV Higgs bosons ( h, H). Considering various theoretical and experimental constraints, we figure out the allowed ranges of the trilinear couplings of these two Higgs bosons and calculate the signal rate of b (b) over bar gamma gamma from the productions of Higgs pairs (hh, hH, HH) at the large hadron collider (LHC). We find that in the allowed parameter space some trilinear Higgs couplings can be larger than the Standard Model (SM) value by an order and the production rate of b _ b.. can be greatly enhanced. We also consider a “decoupling” benchmark point where the light CP-even Higgs has a SM-like cubic self-coupling while other trilinear couplings are very small. With a detailed simulation on the b (b) over bar gamma gamma signal and backgrounds, we find that in such a “decoupling” scenario the hh and hH channels can jointly enhance the statistical significance to 5 sigma at 14 TeV LHC with an integrated luminosity of 3000 fb(-1).

Abstract: The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb(-1) means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 center dot 10(15) MeVn(eq)/cm(2) and 0.66MGy, respectively, including a safety factor of 1.5. Radiation hard n(+)-in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n(+) implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. We discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips.

Abstract: The LHCb detector is a forward spectrometer at the Large Hadron Collider (LHC) at CERN. The experiment is designed for precision measurements of CP violation and rare decays of beauty and charm hadrons. In this paper the performance of the various LHCb sub-detectors and the trigger system are described, using data taken from 2010 to 2012. It is shown that the design criteria of the experiment have been met. The excellent performance of the detector has allowed the LHCb collaboration to publish a wide range of physics results, demonstrating LHCb's unique role, both as a heavy flavour experiment and as a general purpose detector in the forward region.