Abstract: The spectroscopic performances of the new integrated ASIC (Application-Specific Integrated Circuit) preamplifiers for highly segmented silicon detectors have been evaluated with an early silicon detector prototype of the TRacking Array for light Charged Ejectiles (TRACE). The ASICS were mounted on a custom-designed PCB (Printed Circuit Board) and the detector plugged on it. Energy resolution tests, performed on the same detector before and after irradiation, yielded a resolution of 21 keV and 33 keV FWHM respectively. The output signals were acquired with an array of commercial 100-MHz 14-bit digitizers. The preamplifier chip is equipped with an innovative Fast-Reset device that has two functions: it reduces dramatically the dead time of the preamplifier in case of saturation (from milliseconds to microseconds) and extends the spectroscopic dynamic range of the preamplifier by more than one order of magnitude. Other key points of the device are the low noise and the wide bandwidth.

Abstract: The interest in using continuous monolithic crystals in positron emission tomography (PET) has grown in the last years. Coupled to silicon photomultipliers (SiPMs), the detector can combine high sensitivity and high resolution, the two main factors to be maximized in a positron emission tomograph. In this work, the position determination capability of a detector comprised of a 12 x 12 x 10 mm(3) LYSO crystal coupled to an 8 x 8-pixel array of SiPMs is evaluated. The 3D interaction position of.-rays is estimated using an analytical model of the light distribution including reflections on the facets of the crystal. Monte Carlo simulations have been performed to evaluate different crystal reflectors and geometries. The method has been characterized and applied to different cases. Intrinsic resolution obtained with the position estimation method used in this work, applied to experimental data, achieves sub-millimetre resolution values. Average resolution over the detector surface for 5 mm thick crystal is similar to 0.9 mm FWHM and similar to 1.2 mm FWHM for 10 mm thick crystal. Depth of interaction resolution is close to 2 mm FWHM in both cases, while the FWTM is similar to 5.3 mm for 5 mm thick crystal and similar to 9.6 mm for 10 mm thick crystal.

Abstract: The production of large area sensors is one of the main challenges that the ATLAS collaboration faces for the new Inner-Tracker full-silicon detector. During the prototype fabrication phase for the High Luminosity Large Hadron Collider upgrade, several ATLAS institutes observed indications of humidity sensitivity of large area sensors, even at relative humidities well below the dew point. Specifically, prototype Barrel and End-Cap silicon strip sensors fabricated in 6-inch wafers manifest a prompt decrease of the breakdown voltage when operating under high relative humidity, adversely affecting the performance of the sensors. In addition to the investigation of these prototype sensors, a specific fabrication batch with special passivation is also studied, allowing for a deeper understanding of the responsible mechanisms. This work presents an extensive study of this behaviour on large area sensors. The locations of the hotspots at the breakdown voltage at high humidity are revealed using different infrared thermography techniques. Several palliative treatments are attempted, proving the influence of sensor cleaning methods, as well as baking, on the device performance, but no improvement on the humidity sensitivity was achieved. Furthermore, a study of the incidence of the sensitivity in different batches is also presented, introducing a hypothesis of the origins of the humidity sensitivity associated to the sensor edge design, together with passivation thickness and conformity. Several actions to be taken during sensor production and assembly are extracted from this study, in order to minimize the impact of humidity sensitivity on the performance of large area silicon sensors for High Energy Physics experiments.