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Author (up) Bloch, I.M.; Caputo, A.; Essig, R.; Redigolo, D.; Sholapurkar, M.; Volansky, T. url  doi
openurl 
  Title Exploring new physics with O(keV) electron recoils in direct detection experiments Type Journal Article
  Year 2021 Publication Journal of High Energy Physics Abbreviated Journal J. High Energy Phys.  
  Volume 01 Issue 1 Pages 178 - 63pp  
  Keywords Beyond Standard Model; Cosmology of Theories beyond the SM  
  Abstract Motivated by the recent XENON1T results, we explore various new physics models that can be discovered through searches for electron recoils in O(keV)-threshold direct-detection experiments. First, we consider the absorption of axion-like particles, dark photons, and scalars, either as dark matter relics or being produced directly in the Sun. In the latter case, we find that keV mass bosons produced in the Sun provide an adequate fit to the data but are excluded by stellar cooling constraints. We address this tension by introducing a novel Chameleon-like axion model, which can explain the excess while evading the stellar bounds. We find that absorption of bosonic dark matter provides a viable explanation for the excess only if the dark matter is a dark photon or an axion. In the latter case, photophobic axion couplings are necessary to avoid X-ray constraints. Second, we analyze models of dark matter-electron scattering to determine which models might explain the excess. Standard scattering of dark matter with electrons is generically in conflict with data from lower-threshold experiments. Momentum-dependent interactions with a heavy mediator can fit the data with dark matter mass heavier than a GeV but are generically in tension with collider constraints. Next, we consider dark matter consisting of two (or more) states that have a small mass splitting. The exothermic (down)scattering of the heavier state to the lighter state can fit the data for keV mass splittings. Finally, we consider a subcomponent of dark matter that is accelerated by scattering off cosmic rays, finding that dark matter interacting though an O(100 keV)-mass mediator can fit the data. The cross sections required in this scenario are, however, typically challenged by complementary probes of the light mediator. Throughout our study, we implement an unbinned Monte Carlo analysis and use an improved energy reconstruction of the XENON1T events.  
  Address [Bloch, Itay M.; Volansky, Tomer] Tel Aviv Univ, Sch Phys & Astron, IL-69978 Tel Aviv, Israel, Email: itay.bloch.m@gmail.com;  
  Corporate Author Thesis  
  Publisher Springer Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1029-8479 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000616257000001 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 4713  
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Author (up) Poley, L.; Blue, A.; Bloch, I.; Buttar, C.; Fadeyev, V.; Fernandez-Tejero, J.; Fleta, C.; Hacker, J.; Lacasta, C.; Miñano, M.; Renzmann, M.; Rossi, E.; Sawyer, C.; Sperlich, D.; Stegler, M.; Ullan, M.; Unno, Y. url  doi
openurl 
  Title Mapping the depleted area of silicon diodes using a micro-focused X-ray beam Type Journal Article
  Year 2019 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.  
  Volume 14 Issue Pages P03024 - 14pp  
  Keywords Si microstrip and pad detectors; Detector design and construction technologies and materials; Particle tracking detectors (Solid-state detectors); Radiation-hard detectors  
  Abstract For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker (ITk). The ITk will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of 500V to maintain a low noise and power dissipation. In order to minimise sensor leakage currents, particularly in the high-radiation environment inside the ATLAS detector, sensors are foreseen to be operated at low temperatures and to be manufactured from wafers with a high bulk resistivity of several k Omega.cm. Simulations showed the electric field inside sensors with high bulk resistivity to extend towards the sensor edge, which could lead to increased surface currents for narrow dicing edges. In order to map the electric field inside biased silicon sensors with high bulk resistivity, three diodes from ATLAS silicon strip sensor prototype wafers were studied with a monochromatic, micro-focused X-ray beam at the Diamond Light Source (Didcot, U.K.). For all devices under investigation, the electric field inside the diode was mapped and its dependence on the applied bias voltage was studied.  
  Address [Poley, L.] Lawrence Berkeley Natl Lab, Cyclotron Rd, Berkeley, CA 94720 USA, Email: Anne-Luise.Poley@desy.de  
  Corporate Author Thesis  
  Publisher Iop Publishing Ltd Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1748-0221 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000463330900012 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 3973  
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