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Author (up) Andricek, L. et al; Lacasta, C.; Marinas, C.; Vos, M.
Title Intrinsic resolutions of DEPFET detector prototypes measured at beam tests Type Journal Article
Year 2011 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 638 Issue 1 Pages 24-32
Keywords Silicon pixel detector; Detector resolution; Spatial resolution; DEPFET; Beam test
Abstract The paper is based on the data of the 2009 DEPFET beam test at CERN SPS. The beam test used beams of pions and electrons with energies between 40 and 120 GeV, and the sensors tested were prototypes with thickness of 450 μm and pixel pitch between 20 and 32 μm. Intrinsic resolutions of the detectors are calculated by disentangling the contributions of measurement errors and multiple scattering in tracking residuals. Properties of the intrinsic resolution estimates and factors that influence them are discussed. For the DEPFET detectors in the beam test, the calculation yields intrinsic resolutions of approximate to 1 μm, with a typical accuracy of 0.1 μm. Bias scan, angle scan, and energy scan are used as example studies to show that the intrinsic resolutions are a useful tool in studies of detector properties. With sufficiently precise telescopes, detailed resolution maps can be constructed and used to study and optimize detector performance.
Address [Dolezal, Z.; Drasal, Z.; Kodys, P.; Kvasnicka, P.; Malina, L.; Scheirich, J.] Charles Univ Prague, Fac Math & Phys, Inst Particle & Nucl Phys, CR-18000 Prague, Czech Republic, Email: peter.kodys@mff.cuni.cz
Corporate Author Thesis
Publisher Elsevier Science Bv Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes ISI:000290082600005 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 618
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Author (up) Andricek, L.; Boronat, M.; Fuster, J.; Garcia, I.; Gomis, P.; Marinas, C.; Ninkovic, J.; Perello, M.; Villarejo, M.A.; Vos, M.
Title Integrated cooling channels in position-sensitive silicon detectors Type Journal Article
Year 2016 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.
Volume 11 Issue Pages P06018 - 15pp
Keywords Particle tracking detectors; Particle tracking detectors (Solid-state detectors)
Abstract We present an approach to construct position-sensitive silicon detectors with an integrated cooling circuit. Tests on samples demonstrate that a very modest liquid flow very effectively cool the devices up to a power dissipation of over 10 W/cm(2). The liquid flow is found to have a negligible impact on the mechanical stability. A finite-element simulation predicts the cooling performance to an accuracy of approximately 10%.
Address [Andricek, L.; Ninkovic, J.] Max Plank Gesell, HalbLeiterLabor, Munich, Germany, Email: ignacio.garcia@ific.uv.es
Corporate Author Thesis
Publisher Iop Publishing Ltd Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes WOS:000379239700030 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 2760
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Author (up) Schreeck, H.; Paschen, B.; Wieduwilt, P.; Ahlburg, P.; Andricek, L.; Dingfelder, J.; Frey, A.; Lutticke, F.; Marinas, C.; Richter, R.; Schwenker, B.
Title Effects of gamma irradiation on DEPFET pixel sensors for the Belle II experiment Type Journal Article
Year 2020 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 959 Issue Pages 163522 - 9pp
Keywords DEPFET; Radiation damage; Particle tracking detectors; Belle II
Abstract For the Belle II experiment at KEK (Tsukuba, Japan) the KEKB accelerator was upgraded to deliver a 40 times larger instantaneous luminosity than before, which requires an increased radiation hardness of the detector components. As the innermost part of the Belle II detector, the pixel detector (PXD), based on DEPFET (DEpleted P-channel Field Effect Transistor) technology, is most exposed to radiation from the accelerator. An irradiation campaign was performed to verify that the PXD can cope with the expected amount of radiation. We present the results of this measurement campaign in which an X-ray machine was used to irradiate a single PXD half-ladder to a total dose of 266 kGy. The half-ladder is from the same batch as the half-ladders used for Belle II. According to simulations, the total accumulated dose corresponds to 7-10 years of Belle II operation. While individual components have been irradiated before, this campaign is the first full system irradiation. We discuss the effects on the DEPFET sensors, as well as the performance of the front-end electronics. In addition, we present efficiency studies of the half-ladder from beam tests performed before and after the irradiation.
Address [Schreeck, Harrison; Wieduwilt, Philipp; Frey, Ariane; Schwenker, Benjamin] Georg August Univ Gottingen, Phys Inst 2, Friedrich Hund Pl 1, D-37077 Gottingen, Germany, Email: harrison.schreeck@phys.uni-goettingen.de
Corporate Author Thesis
Publisher Elsevier Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:000518368800016 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 4316
Permanent link to this record