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Author |
Real, D.; Calvo, D.; Zornoza, J.D.; Manzaneda, M.; Gozzini, R.; Ricolfe-Viala, C.; Lajara, R.; Albiol, F. |
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Title |
Fast Coincidence Filter for Silicon Photomultiplier Dark Count Rate Rejection |
Type |
Journal Article |
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Year |
2024 |
Publication |
Sensors |
Abbreviated Journal |
Sensors |
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Volume |
24 |
Issue |
7 |
Pages |
2084 - 12pp |
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Keywords |
time-to-digital converters; neutrino telescopes; silicon photomultipliers; dark noise rate filtering |
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Abstract |
Silicon Photomultipliers find applications across various fields. One potential Silicon Photomultiplier application domain is neutrino telescopes, where they may enhance the angular resolution. However, the elevated dark count rate associated with Silicon Photomultipliers represents a significant challenge to their widespread utilization. To address this issue, it is proposed to use Silicon Photomultipliers and Photomultiplier Tubes together. The Photomultiplier Tube signals serve as a trigger to mitigate the dark count rate, thereby preventing undue saturation of the available bandwidth. This paper presents an investigation into a fast and resource-efficient method for filtering the Silicon Photomultiplier dark count rate. A low-resource and fast coincident filter has been developed, which removes the Silicon Photomultiplier dark count rate by using as a trigger the Photomultiplier Tube input signals. The architecture of the coincidence filter, together with the first results obtained, which validate the effectiveness of this method, is presented. |
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Address  |
[Real, Diego; Calvo, David; Zornoza, Juan de Dios; Manzaneda, Mario; Gozzini, Rebecca; Albiol, Francisco] CSIC Univ Valencia, IFIC Inst Fis Corpuscular, C Catedrat Jose Beltran 2, Paterna 46980, Spain, Email: real@ific.uv.es; |
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Mdpi |
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Language |
English |
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Notes |
WOS:001201226600001 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
no |
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Call Number |
IFIC @ pastor @ |
Serial |
6063 |
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Author |
Muñoz, E.; Barrio, J.; Etxebeste, A.; Ortega, P.G.; Lacasta, C.; Oliver, J.F.; Solaz, C.; Llosa, G. |
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Title |
Performance evaluation of MACACO: a multilayer Compton camera |
Type |
Journal Article |
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Year |
2017 |
Publication |
Physics in Medicine and Biology |
Abbreviated Journal |
Phys. Med. Biol. |
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Volume |
62 |
Issue |
18 |
Pages |
7321-7341 |
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Keywords |
Compton imaging; Compton camera; continuous LaBr3 crystal; silicon photomultiplier; hadron therapy |
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Abstract |
Compton imaging devices have been proposed and studied for a wide range of applications. We have developed a Compton camera prototype which can be operated with two or three detector layers based on monolithic lanthanum bromide (LaBr3) crystals coupled to silicon photomultipliers (SiPMs), to be used for proton range verification in hadron therapy. In this work, we present the results obtained with our prototype in laboratory tests with radioactive sources and in simulation studies. Images of a Na-22 and an Y-88 radioactive sources have been successfully reconstructed. The full width half maximum of the reconstructed images is below 4 mm for a Na-22 source at a distance of 5 cm. |
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Address |
[Munoz, Enrique; Barrio, John; Etxebeste, Ane; Ortega, Pablo G.; Lacasta, Carlos; Oliver, Josep F.; Solaz, Carles; Llosa, Gabriela] Univ Valencia, CSIC, Inst Fis Corpuscular, Valencia, Spain, Email: Enrique.Munoz@ific.uv.es |
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Publisher |
Iop Publishing Ltd |
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English |
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ISSN |
0031-9155 |
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Notes |
WOS:000408229900003 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
3253 |
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Author |
Mengoni, D.; Duenas, J.A.; Assie, M.; Boiano, C.; John, P.R.; Aliaga, R.J.; Beaumel, D.; Capra, S.; Gadea, A.; Gonzales, V.; Gottardo, A.; Grassi, L.; Herrero-Bosch, V.; Houdy, T.; Martel, I.; Parkar, V.V.; Perez-Vidal, R.M.; Pullia, A.; Sanchis, E.; Triossi, A.; Valiente-Dobon, J.J. |
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Title |
Digital pulse-shape analysis with a TRACE early silicon prototype |
Type |
Journal Article |
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Year |
2014 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
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Volume |
764 |
Issue |
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Pages |
241-246 |
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Keywords |
Silicon detector; Light-charged particles; Digital pulse shape analysis; Particle identification; Gamma-ray spectroscopy |
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Abstract |
A highly segmented silicon-pad detector prototype has been tested to explore the performance of the digital pulse shape analysis in the discrimination of the particles reaching the silicon detector. For the first time a 200 tun thin silicon detector, grown using an ordinary floating zone technique, has been shown to exhibit a level discrimination thanks to the fine segmentation. Light-charged particles down to few MeV have been separated, including their punch-through. A coaxial HPGe detector in time coincidence has further confirmed the quality of the particle discrimination. |
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Address |
[Mengoni, D.; John, P. R.; Grassi, L.] Univ Padua, Dipartimento Fis & Astron, I-35131 Padua, Italy |
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Publisher |
Elsevier Science Bv |
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English |
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Series Editor |
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Abbreviated Series Title |
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Series Volume |
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Edition |
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ISSN |
0168-9002 |
ISBN |
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Conference |
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Notes |
WOS:000341987000030 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
1929 |
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Author |
Llosa, G. |
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Title |
SiPM-based Compton cameras |
Type |
Journal Article |
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Year |
2019 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
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Volume |
926 |
Issue |
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Pages |
148-152 |
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Keywords |
Compton camera; Silicon photomultiplier (SiPM) |
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Abstract |
Compton cameras have been developed for almost fifty years in various fields (astronomy, medical imaging, safety and industrial inspections, etc.), employing different types of detectors. Their potential use has gained renewed interest with the emergence of high light yield scintillator crystals and silicon photomultipliers (SiPMs). This combination provides good performance and operation simplicity at an affordable cost, raising again the interest in this type of systems. SiPM-based Compton cameras are being assessed for diverse applications with promising results. |
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Address |
[Llosa, G.] UVEG, CSIC, Inst Fis Corpuscular IFIC, C Catedrat Beltran 2, E-46980 Valencia, Spain, Email: llosa@ific.uv.es |
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Elsevier Science Bv |
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English |
Summary Language |
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Series Editor |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0168-9002 |
ISBN |
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Conference |
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Notes |
WOS:000461775500011 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
no |
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Call Number |
IFIC @ pastor @ |
Serial |
3951 |
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Author |
Latonova, V. et al; Bernabeu, J.; Lacasta, C.; Solaz, C.; Soldevila, U. |
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Title |
Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation |
Type |
Journal Article |
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Year |
2023 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
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Volume |
1050 |
Issue |
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Pages |
168119 - 5pp |
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Keywords |
HL-LHC; ATLAS ITk; Silicon micro-strip sensor; Polysilicon bias resistor; Testchip |
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Abstract |
The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb(-1) means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 center dot 10(15) MeVn(eq)/cm(2) and 0.66MGy, respectively, including a safety factor of 1.5. Radiation hard n(+)-in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n(+) implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. We discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips. |
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Address |
[Latonova, V.; Federicova, P.; Kroll, J.; Kvasnicka, J.; Mikestikova, M.] Acad Sci Czech Republ, Inst Phys, Slovance 2, Prague 8, Czech Republic, Email: vera.latonova@cern.ch |
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Corporate Author |
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Thesis |
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Publisher |
Elsevier |
Place of Publication |
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Editor |
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Language |
English |
Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0168-9002 |
ISBN |
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Area |
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Expedition |
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Conference |
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Notes |
WOS:001035405300001 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
5601 |
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