Abstract: We have constructed a GEANT4-based detailed software model of photon transport in plastic sontillator blocks and have used it to study the NEMO-3 and SuperNEMO calorimeters employed in experiments designed to search for neutnnoless double beta decay We compare our simulations to measurements using conversion electrons from a calibration source of (BI)-B-207 and show that the agreement is improved if wavelength-dependent properties of the calorimeter are taken into account In this article we briefly describe our modeling approach and results of our studies.

Abstract: The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb(-1) means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 center dot 10(15) MeVn(eq)/cm(2) and 0.66MGy, respectively, including a safety factor of 1.5. Radiation hard n(+)-in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n(+) implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. We discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips.

Abstract: We describe a measurement of the time-integrated luminosity of the data collected by the BABAR experiment at the PEP-II asymmetric-energy e(+)e(-) collider at the Upsilon(4S), Upsilon(3S), and Upsilon(2S) resonances and in a continuum region below each resonance. We measure the time-integrated luminosity by counting e(+)e(-)-> e(+)e(-) and (for the Upsilon(4S) only) e(+)e(-)->mu(+)mu(-) candidate events, allowing additional photons in the final state. We use data-corrected simulation to determine the cross-sections and reconstruction efficiencies for these processes, as well as the major backgrounds. Due to the large cross-sections of e(+)e(-)-> e(+)e(-) and e(+)e(-)->mu(+)mu(-), the statistical uncertainties of the measurement are substantially smaller than the systematic uncertainties. The dominant systematic uncertainties are due to observed differences between data and simulation, as well as uncertainties on the cross-sections. For data collected on the Upsilon(3S) and Upsilon(2S) resonances, an additional uncertainty arises due to Upsilon -> e(+)e(-)X background. For data collected off the Upsilon resonances, we estimate an additional uncertainty due to time dependent efficiency variations, which can affect the short off-resonance runs. The relative uncertainties on the luminosities of the on-resonance (off-resonance) samples are 0.43% (0.43%) for the Upsilon(4S), 0.58% (0.72%) for the Upsilon(3S), and 0.68% (0.88%) for the Upsilon(2S).