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Author Briz, J.A.; Nerio, A.N.; Ballesteros, C.; Borge, M.J.G.; Martinez, P.; Perea, A.; Tavora, V.G.; Tengblad, O.; Ciemala, M.; Maj, A.; Olko, P.; Parol, W.; Pedracka, A.; Sowicki, B.; Zieblinski, M.; Nacher, E. url  doi
openurl 
  Title Proton Radiographs Using Position-Sensitive Silicon Detectors and High-Resolution Scintillators Type Journal Article
  Year 2022 Publication IEEE Transactions on Nuclear Science Abbreviated Journal IEEE Trans. Nucl. Sci.  
  Volume 69 Issue 4 Pages 696-702  
  Keywords LaBr3; particle tracking; proton computed tomography (pCT); proton radiograph; proton therapy; scintillation detectors; silicon detectors  
  Abstract Proton therapy is a cancer treatment technique currently in growth since it offers advantages with respect to conventional X-ray and gamma-ray radiotherapy. In particular, better control of the dose deposition allowing to reach higher conformity in the treatments causing less secondary effects. However, in order to take full advantage of its potential, improvements in treatment planning and dose verification are required. A new prototype of proton computed tomography scanner is proposed to design more accurate and precise treatment plans for proton therapy. Our prototype is formed by double-sided silicon strip detectors and scintillators of LaBr3(Ce) with high energy resolution and fast response. Here, the results obtained from an experiment performed using a 100-MeV proton beam are presented. Proton radiographs of polymethyl methacrylate (PMMA) samples of 50-mm thickness with spatial patterns in aluminum were taken. Their properties were studied, including reproduction of the dimensions, spatial resolution, and sensitivity to different materials. Structures of up to 2 mm are well resolved and the sensitivity of the system was enough to distinguish the thicknesses of 10 mm of aluminum or PMMA. The spatial resolution of the images was 0.3 line pairs per mm (MTF-10%). This constitutes the first step to validate the device as a proton radiography scanner.  
  Address (up) [Briz, J. A.; Nerio, A. N.; Ballesteros, C.; Borge, M. J. G.; Martinez, P.; Perea, A.; Tavora, V. G.; Tengblad, O.] Inst Estruct Mat CSIC, Madrid 28006, Spain, Email: jose.briz@csic.es  
  Corporate Author Thesis  
  Publisher Ieee-Inst Electrical Electronics Engineers Inc Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0018-9499 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000803113800017 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 5245  
Permanent link to this record
 

 
Author Capra, S.; Mengoni, D.; Dueñas, J.A.; John, P.R.; Gadea, A.; Aliaga, R.J.; Dormard, J.J.; Assie, M.; Pullia, A. doi  openurl
  Title Performance of the new integrated front-end electronics of the TRACE array commissioned with an early silicon detector prototype Type Journal Article
  Year 2019 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 935 Issue Pages 178-184  
  Keywords ASIC; Charge-sensitive preamplifier; Low-noise applications; Particle spectrometry; Dead time; Silicon detector  
  Abstract The spectroscopic performances of the new integrated ASIC (Application-Specific Integrated Circuit) preamplifiers for highly segmented silicon detectors have been evaluated with an early silicon detector prototype of the TRacking Array for light Charged Ejectiles (TRACE). The ASICS were mounted on a custom-designed PCB (Printed Circuit Board) and the detector plugged on it. Energy resolution tests, performed on the same detector before and after irradiation, yielded a resolution of 21 keV and 33 keV FWHM respectively. The output signals were acquired with an array of commercial 100-MHz 14-bit digitizers. The preamplifier chip is equipped with an innovative Fast-Reset device that has two functions: it reduces dramatically the dead time of the preamplifier in case of saturation (from milliseconds to microseconds) and extends the spectroscopic dynamic range of the preamplifier by more than one order of magnitude. Other key points of the device are the low noise and the wide bandwidth.  
  Address (up) [Capra, S.; Pullia, A.] Univ Milan, Dipartimento Fis, Via Celoria 16, IT-20133 Milan, Italy, Email: stefano.capra@unimi.it  
  Corporate Author Thesis  
  Publisher Elsevier Science Bv Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000470063800026 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 4042  
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Author Clinthorne, N.; Brzezinski, K.; Chesi, E.; Cochran, E.; Grkovski, M.; Grosicar, B.; Honscheid, K.; Huh, S.; Kagan, H.; Lacasta, C.; Linhart, V.; Mikuz, M.; Smith, D.S.; Stankova, V.; Studen, A.; Weilhammer, P.; Zontar, D. doi  openurl
  Title Silicon as an unconventional detector in positron emission tomography Type Journal Article
  Year 2013 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 699 Issue Pages 216-220  
  Keywords PET; Silicon detectors; Multiresolution imaging; Magnifying PET  
  Abstract Positron emission tomography (PET) is a widely used technique in medical imaging and in studying small animal models of human disease. In the conventional approach, the 511 keV annihilation photons emitted from a patient or small animal are detected by a ring of scintillators such as LYSO read out by arrays of photodetectors. Although this has been successful in achieving similar to 5 mm FWHM spatial resolution in human studies and similar to 1 mm resolution in dedicated small animal instruments, there is interest in significantly improving these figures. Silicon, although its stopping power is modest for 511 keV photons, offers a number of potential advantages over more conventional approaches including the potential for high intrinsic spatial resolution in 3D. To evaluate silicon in a variety of PET “magnifying glass” configurations, an instrument was constructed that consists of an outer partial-ring of PET scintillation detectors into which various arrangements of silicon detectors are inserted to emulate dual-ring or imaging probe geometries. Measurements using the test instrument demonstrated the capability of clearly resolving point sources of Na-22 having a 1.5 mm center-to-center spacing as well as the 1.2 mm rods of a F-18-filled resolution phantom. Although many challenges remain, silicon has potential to become the PET detector of choice when spatial resolution is the primary consideration. (C) 2012 Elsevier B.V. All rights reserved.  
  Address (up) [Clinthorne, Neal; Huh, Sam] Univ Michigan, Dept Radiol, Ann Arbor, MI 48109 USA, Email: nclintho@umich.edu  
  Corporate Author Thesis  
  Publisher Elsevier Science Bv Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000312809200045 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 1290  
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Author Andricek, L. et al; Lacasta, C.; Marinas, C.; Vos, M. doi  openurl
  Title Intrinsic resolutions of DEPFET detector prototypes measured at beam tests Type Journal Article
  Year 2011 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 638 Issue 1 Pages 24-32  
  Keywords Silicon pixel detector; Detector resolution; Spatial resolution; DEPFET; Beam test  
  Abstract The paper is based on the data of the 2009 DEPFET beam test at CERN SPS. The beam test used beams of pions and electrons with energies between 40 and 120 GeV, and the sensors tested were prototypes with thickness of 450 μm and pixel pitch between 20 and 32 μm. Intrinsic resolutions of the detectors are calculated by disentangling the contributions of measurement errors and multiple scattering in tracking residuals. Properties of the intrinsic resolution estimates and factors that influence them are discussed. For the DEPFET detectors in the beam test, the calculation yields intrinsic resolutions of approximate to 1 μm, with a typical accuracy of 0.1 μm. Bias scan, angle scan, and energy scan are used as example studies to show that the intrinsic resolutions are a useful tool in studies of detector properties. With sufficiently precise telescopes, detailed resolution maps can be constructed and used to study and optimize detector performance.  
  Address (up) [Dolezal, Z.; Drasal, Z.; Kodys, P.; Kvasnicka, P.; Malina, L.; Scheirich, J.] Charles Univ Prague, Fac Math & Phys, Inst Particle & Nucl Phys, CR-18000 Prague, Czech Republic, Email: peter.kodys@mff.cuni.cz  
  Corporate Author Thesis  
  Publisher Elsevier Science Bv Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes ISI:000290082600005 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 618  
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Author Unno, Y. et al; Garcia, C.; Jimenez, J.; Lacasta, C.; Marti-Garcia, S.; Soldevila, U. doi  openurl
  Title Development of n(+) -in-p large-area silicon microstrip sensors for very high radiation environments-ATLAS12 design and initial results Type Journal Article
  Year 2014 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 765 Issue Pages 80-90  
  Keywords Silicon strip; n(+)-in-p; P-type; Radiation-tolerant; HL-LHC; PTP  
  Abstract We have been developing a novel radiation tolerant n(+)-in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float zone wafers, where large area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 pm and slim edge space of 450 pm, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers.  
  Address (up) [Edwards, S. O.; Pyatt, S.; Thomas, J. P.; Wilson, J. A.] Univ Birmingham, Sch Phys & Astron, Birmingham B15 2TT, W Midlands, England, Email: yoshinobu.unno@kek.jp  
  Corporate Author Thesis  
  Publisher Elsevier Science Bv Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000344621000016 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 2002  
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