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Author Ullan, M.; Benitez, V.; Quirion, D.; Zabala, M.; Pellegrini, G.; Lozano, M.; Lacasta, C.; Soldevila, U.; Garcia, C.; Fadeyev, V.; Wortman, J.; DeFilippis, J.; Shumko, M.; Grillo, A.A.; Sadrozinski, H.F.W. doi  openurl
  Title Low-resistance strip sensors for beam-loss event protection Type Journal Article
  Year 2014 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 765 Issue Pages 252-257  
  Keywords Silicon radiation detectors; Strip sensors; Punch through protection; Beam loss; HL-LHC; ATLAS Upgrade  
  Abstract AC coupled silicon strip sensors can be damaged in case of a beam loss due to the possibility of a large charge accumulation in the bulk, developing very high voltages across the coupling capacitors which can destroy them. Punch-through structures are currently used to avoid this problem helping to evacuate the accumulated charge as large voltages are developing. Nevertheless, previous experiments, performed with laser pulses, have shown that these structures can become ineffective in relatively long strips. The large value of the implant resistance can effectively isolate the “far” end of the strip from the punchthrough structure leading to large voltages. We present here our developments to fabricate lowresistance strip sensors to avoid this problem. The deposition of a conducting material in contact with the implants drastically reduces the strip resistance, assuring the effectiveness of the punch-through structures. First devices have been fabricated with this new technology. Initial results with laser tests show the expected reduction in peak voltages on the low resistivity implants. Other aspects of the sensor performance, including the signal formation, are not affected by the new technology.  
  Address (down) [Ullan, M.; Benitez, V.; Quirion, D.; Zabala, M.; Pellegrini, G.; Lozano, M.] CSIC, Ctr Nacl Microelect IMB CNM, Barcelona 08193, Spain, Email: Miguel.Ullan@imb-cnm.csic.es  
  Corporate Author Thesis  
  Publisher Elsevier Science Bv Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000344621000048 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 2003  
Permanent link to this record
 

 
Author Poley, L. et al; Lacasta, C.; Soldevila, U. url  doi
openurl 
  Title Characterisation of strip silicon detectors for the ATLAS Phase-II Upgrade with a micro-focused X-ray beam Type Journal Article
  Year 2016 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.  
  Volume 11 Issue Pages P07023 - 12pp  
  Keywords Inspection with x-rays; Si microstrip and pad detectors; Hybrid detectors; Instrumentation for particle accelerators and storage rings – high energy (linear accelerators, synchrotrons)  
  Abstract The planned HL-LHC (High Luminosity LHC) in 2025 is being designed to maximise the physics potential through a sizable increase in the luminosity up to 6.10(34) cm(-2) s(-1). A consequence of this increased luminosity is the expected radiation damage at 3000 fb(-1) after ten years of operation, requiring the tracking detectors to withstand fluences to over 1.10(16) 1 MeV n(eq)/cm(2) . In order to cope with the consequent increased readout rates, a complete re-design of the current ATLAS Inner Detector (ID) is being developed as the Inner Tracker (ITk). Two proposed detectors for the ATLAS strip tracker region of the ITk were characterized at the Diamond Light Source with a 3 μm FWHM 15 keV micro focused X-ray beam. The devices under test were a 320 μm thick silicon stereo (Barrel) ATLAS12 strip mini sensor wire bonded to a 130 nm CMOS binary readout chip (ABC130) and a 320 μm thick full size radial (end-cap) strip sensor – utilizing bi-metal readout layers – wire bonded to 250 nm CMOS binary readout chips (ABCN-25). A resolution better than the inter strip pitch of the 74.5 μm strips was achieved for both detectors. The effect of the p-stop diffusion layers between strips was investigated in detail for the wire bond pad regions. Inter strip charge collection measurements indicate that the effective width of the strip on the silicon sensors is determined by p-stop regions between the strips rather than the strip pitch.  
  Address (down) [Poley, L.; Bloch, I.; Diez, S.; Gregor, I. -M.; Lohwasser, K.] DESY, Notkestr, Hamburg, Germany, Email: Anne-Luise.Poley@desy.de  
  Corporate Author Thesis  
  Publisher Iop Publishing Ltd Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1748-0221 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000387763000014 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 2872  
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Author Poley, L. et al; Bernabeu, J.; Civera, J.V.; Lacasta, C.; Leon, P.; Platero, A.; Platero, V; Solaz, C.; Soldevila, U.; Vidal, G. url  doi
openurl 
  Title The ABC130 barrel module prototyping programme for the ATLAS strip tracker Type Journal Article
  Year 2020 Publication Journal of Instrumentation Abbreviated Journal J. Instrum.  
  Volume 15 Issue 9 Pages P09004 - 78pp  
  Keywords Detector design and construction technologies and materials; Si microstrip and pad detectors; Radiation-hard detectors; Front-end electronics for detector readout  
  Abstract For the Phase-II Upgrade of the ATLAS Detector [1], its Inner Detector, consisting of silicon pixel, silicon strip and transition radiation sub-detectors, will be replaced with an all new 100% silicon tracker, composed of a pixel tracker at inner radii and a strip tracker at outer radii. The future ATLAS strip tracker will include 11,000 silicon sensor modules in the central region (barrel) and 7,000 modules in the forward region (end-caps), which are foreseen to be constructed over a period of 3.5 years. The construction of each module consists of a series of assembly and quality control steps, which were engineered to be identical for all production sites. In order to develop the tooling and procedures for assembly and testing of these modules, two series of major prototyping programs were conducted: an early program using readout chips designed using a 250 nm fabrication process (ABCN-250) [2, 3] and a subsequent program using a follow-up chip set made using 130 nm processing (ABC130 and HCC130 chips). This second generation of readout chips was used for an extensive prototyping program that produced around 100 barrel-type modules and contributed significantly to the development of the final module layout. This paper gives an overview of the components used in ABC130 barrel modules, their assembly procedure and findings resulting from their tests.  
  Address (down) [Poley, L.; Anderssen, E.; Ciocio, A.; Cornell, E.; Haber, C.; Haugen, T. E.; Heim, T.; Johnson, T. A.; Krizka, K.; Labitan, C.; Li, B.; Li, C.; MacFadyen, R.; Mladina, E.; Ottino, G.; Sanethavong, P.; Santpur, S. Neha; Witharm, R.] Lawrence Berkeley Natl Lab, Cyclotron Rd, Berkeley, CA 94720 USA, Email: APoley@cern.ch  
  Corporate Author Thesis  
  Publisher Iop Publishing Ltd Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1748-0221 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000577273400004 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 4572  
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Author ATLAS Collaboration (Aad, G. et al); Alvarez Piqueras, D.; Cabrera Urban, S.; Castillo Gimenez, V.; Costa, M.J.; Fernandez Martinez, P.; Ferrer, A.; Fiorini, L.; Fuster, J.; Garcia, C.; Garcia Navarro, J.E.; Gonzalez de la Hoz, S.; Hernandez Jimenez, Y.; Higon-Rodriguez, E.; Irles Quiles, A.; Jimenez Pena, J.; Kaci, M.; King, M.; Lacasta, C.; Lacuesta, V.R.; Marti-Garcia, S.; Mitsou, V.A.; Oliver Garcia, E.; Pedraza Lopez, S.; Perez Garcia-Estañ, M.T.; Romero Adam, E.; Ros, E.; Salt, J.; Sanchez Martinez, V.; Soldevila, U.; Sanchez, J.; Valero, A.; Valladolid Gallego, E.; Valls Ferrer, J.A.; Vos, M. url  doi
openurl 
  Title Measurement of the differential cross-sections of prompt and non-prompt production of J/psi and psi(2S) in pp collisions at root s=7 and 8 TeV with the ATLAS detector Type Journal Article
  Year 2016 Publication European Physical Journal C Abbreviated Journal Eur. Phys. J. C  
  Volume 76 Issue 5 Pages 283 - 47pp  
  Keywords  
  Abstract The production rates of prompt and non-prompt J/psi and psi(2S) mesons in their dimuon decay modes are measured using 2.1 and 11.4 fb(-1) of data collected with the ATLAS experiment at the Large Hadron Collider, in proton-proton collisions at root s = 7 and 8 respectively. Production cross-sections for prompt as well as non-prompt sources, ratios of psi(2S) to J/psi production, and the fractions of non-prompt production for J/psi and psi(2S) are measured as a function of meson transverse momentum and rapidity. The measurements are compared to theoretical predictions.  
  Address (down) [Petridis, A.; Sobie, R.; Soni, N.] CERN, CH-1211 Geneva 23, Switzerland  
  Corporate Author Thesis  
  Publisher Springer Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1434-6044 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000376606500003 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 2997  
Permanent link to this record
 

 
Author Latonova, V. et al; Bernabeu, J.; Lacasta, C.; Solaz, C.; Soldevila, U. doi  openurl
  Title Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation Type Journal Article
  Year 2023 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A  
  Volume 1050 Issue Pages 168119 - 5pp  
  Keywords HL-LHC; ATLAS ITk; Silicon micro-strip sensor; Polysilicon bias resistor; Testchip  
  Abstract The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb(-1) means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 center dot 10(15) MeVn(eq)/cm(2) and 0.66MGy, respectively, including a safety factor of 1.5. Radiation hard n(+)-in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n(+) implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. We discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips.  
  Address (down) [Latonova, V.; Federicova, P.; Kroll, J.; Kvasnicka, J.; Mikestikova, M.] Acad Sci Czech Republ, Inst Phys, Slovance 2, Prague 8, Czech Republic, Email: vera.latonova@cern.ch  
  Corporate Author Thesis  
  Publisher Elsevier Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0168-9002 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:001035405300001 Approved no  
  Is ISI yes International Collaboration yes  
  Call Number IFIC @ pastor @ Serial 5601  
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