AGATA Collaboration(Soderstrom, P. A. et al), & Gadea, A. (2011). Interaction position resolution simulations and in-beam measurements of the AGATA HPGe detectors. Nucl. Instrum. Methods Phys. Res. A, 638(1), 96–109.
Abstract: The interaction position resolution of the segmented HPGe detectors of an AGATA triple cluster detector has been studied through Monte Carlo simulations and in an in-beam experiment. A new method based on measuring the energy resolution of Doppler-corrected gamma-ray spectra at two different target to detector distances is described. This gives the two-dimensional position resolution in the plane perpendicular to the direction of the emitted gamma-ray. The gamma-ray tracking was used to determine the full energy of the gamma-rays and the first interaction point, which is needed for the Doppler correction. Five different heavy-ion induced fusion-evaporation reactions and a reference reaction were selected for the simulations. The results of the simulations show that the method works very well and gives a systematic deviation of <1 mm in the FVVHM of the interaction position resolution for the gamma-ray energy range from 60 keV to 5 MeV. The method was tested with real data from an in-beam measurement using a (30)5i beam at 64 MeV on a thin C-12 target. Pulse-shape analysis of the digitized detector waveforms and gamma-ray tracking was performed to determine the position of the first interaction point, which was used for the Doppler corrections. Results of the dependency of the interaction position resolution on the gamma-ray energy and on the energy, axial location and type of the first interaction point, are presented. The FVVHM of the interaction position resolution varies roughly linearly as a function of gamma-ray energy from 8.5 mm at 250 key to 4 mm at 1.5 MeV, and has an approximately constant value of about 4 mm in the gamma-ray energy range from 1.5 to 4 MeV.
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Hara, K. et al, Escobar, C., Garcia, C., Lacasta, C., Miñano, M., & Soldevila, U. (2020). Charge collection study with the ATLAS ITk prototype silicon strip sensors ATLAS17LS. Nucl. Instrum. Methods Phys. Res. A, 983, 164422–6pp.
Abstract: The inner tracker of the ATLAS detector is scheduled to be replaced by a completely new silicon-based inner tracker (ITk) for the Phase-II of the CERN LHC (HL-LHC). The silicon strip detector covers the volume 40 < R < 100 cm in the radial and vertical bar z vertical bar <300 cm in the longitudinal directions. The silicon sensors for the detector will be fabricated using the n(+)-on-p 6-inch wafer technology, for a total of 22,000 wafers. Intensive studies were carried out on the final prototype sensors ATLAS17LS fabricated by Hamamatsu Photonics (HPK). The charge collection properties were examined using penetrating Sr-90 beta-rays and the ALIBAVA fast readout system for the miniature sensors of 1 cm xl cm in area. The samples were irradiated by protons in the 27 MeV Birmingham Cyclotron, the 70 MeV CYRIC at Tohoku University, and the 24 GeV CERN-PS, and by neutrons at Ljubljana TAIGA reactor for fluence values up to 2 x 10(15) n(eq)/cm(2). The change in the charge collection with fluence was found to be similar to the previous prototype ATLAS12, and acceptable for the ITk. Sensors with two active thicknesses, 300 μm (standard) and 240 μm (thin), were compared and the difference in the charge collection was observed to be small for bias voltages up to 500 V. Some samples were also irradiated with gamma radiation up to 2 MGy, and the full depletion voltage was found to decrease with the dose. This was caused by the Compton electrons due to the( 60)Co gamma radiation. To summarize, the design of the ATLAS17LS and technology for its fabrication have been verified for implementation in the ITk. We are in the stage of sensor pre-production with the first sensors already delivered in January of 2020.
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Goel, N., Domingo-Pardo, C., Habermann, T., Ameil, F., Engert, T., Gerl, J., et al. (2013). Characterisation of a symmetric AGATA detector using the gamma-ray imaging scanning technique. Nucl. Instrum. Methods Phys. Res. A, 700, 10–21.
Abstract: The imaging scanning technique for the characterisation of large volume, highly segmented, HPGe detectors is demonstrated by comparing the measured spatial response of a symmetric AGATA crystal versus the theoretical calculations obtained with the Multi-Geometry Simulation (MGS) code. The signal rise-times measured as a function of the gamma-ray interaction positions, in both coaxial and planar regions of the detection volume, are presented and confronted with the expected behaviour obtained via MGS. The transition in charge carrier transport behaviour as a function of the depth is studied for the region of the complex electric field. In general, a fairly good agreement between theory and experiment is obtained. Only systematic deviations between simulation and measurement are observed in the critical front part of the AGATA detector. They may be ascribed to a non-linear impurity concentration profile of the germanium crystal.
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HAWC Collaboration(Abeysekara, A. U. et al), & Salesa Greus, F. (2023). The High-Altitude Water Cherenkov (HAWC) observatory in Mexico: The primary detector. Nucl. Instrum. Methods Phys. Res. A, 1052, 168253–18pp.
Abstract: The High-Altitude Water Cherenkov (HAWC) observatory is a second-generation continuously operated, wide field-of-view, TeV gamma-ray observatory. The HAWC observatory and its analysis techniques build on experience of the Milagro experiment in using ground-based water Cherenkov detectors for gamma-ray astronomy. HAWC is located on the Sierra Negra volcano in Mexico at an elevation of 4100 meters above sea level. The completed HAWC observatory principal detector (HAWC) consists of 300 closely spaced water Cherenkov detectors, each equipped with four photomultiplier tubes to provide timing and charge information to reconstruct the extensive air shower energy and arrival direction. The HAWC observatory has been optimized to observe transient and steady emission from sources of gamma rays within an energy range from several hundred GeV to several hundred TeV. However, most of the air showers detected are initiated by cosmic rays, allowing studies of cosmic rays also to be performed. This paper describes the characteristics of the HAWC main array and its hardware.
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Latonova, V. et al, Bernabeu, J., Lacasta, C., Solaz, C., & Soldevila, U. (2023). Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation. Nucl. Instrum. Methods Phys. Res. A, 1050, 168119–5pp.
Abstract: The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb(-1) means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 center dot 10(15) MeVn(eq)/cm(2) and 0.66MGy, respectively, including a safety factor of 1.5. Radiation hard n(+)-in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n(+) implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. We discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips.
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