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Author Hara, K. et al; Escobar, C.; Garcia, C.; Lacasta, C.; Miñano, M.; Soldevila, U.
Title Charge collection study with the ATLAS ITk prototype silicon strip sensors ATLAS17LS Type Journal Article
Year 2020 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 983 Issue Pages 164422 - 6pp
Keywords ATLAS ITk; Microstrip sensor; Charge collection; Radiation damage
Abstract (down) The inner tracker of the ATLAS detector is scheduled to be replaced by a completely new silicon-based inner tracker (ITk) for the Phase-II of the CERN LHC (HL-LHC). The silicon strip detector covers the volume 40 < R < 100 cm in the radial and vertical bar z vertical bar <300 cm in the longitudinal directions. The silicon sensors for the detector will be fabricated using the n(+)-on-p 6-inch wafer technology, for a total of 22,000 wafers. Intensive studies were carried out on the final prototype sensors ATLAS17LS fabricated by Hamamatsu Photonics (HPK). The charge collection properties were examined using penetrating Sr-90 beta-rays and the ALIBAVA fast readout system for the miniature sensors of 1 cm xl cm in area. The samples were irradiated by protons in the 27 MeV Birmingham Cyclotron, the 70 MeV CYRIC at Tohoku University, and the 24 GeV CERN-PS, and by neutrons at Ljubljana TAIGA reactor for fluence values up to 2 x 10(15) n(eq)/cm(2). The change in the charge collection with fluence was found to be similar to the previous prototype ATLAS12, and acceptable for the ITk. Sensors with two active thicknesses, 300 μm (standard) and 240 μm (thin), were compared and the difference in the charge collection was observed to be small for bias voltages up to 500 V. Some samples were also irradiated with gamma radiation up to 2 MGy, and the full depletion voltage was found to decrease with the dose. This was caused by the Compton electrons due to the( 60)Co gamma radiation. To summarize, the design of the ATLAS17LS and technology for its fabrication have been verified for implementation in the ITk. We are in the stage of sensor pre-production with the first sensors already delivered in January of 2020.
Address [Hara, K.] Univ Tsukuba, Inst Pure & Appl Sci, Tsukuba, Ibaraki 3058571, Japan, Email: hara@hep.px.tsukuba.ac.jp
Corporate Author Thesis
Publisher Elsevier Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:000581808300002 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 4606
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Author Goel, N.; Domingo-Pardo, C.; Habermann, T.; Ameil, F.; Engert, T.; Gerl, J.; Kojouharov, I.; Maruhn, J.; Pietralla, N.; Schaffner, H.
Title Characterisation of a symmetric AGATA detector using the gamma-ray imaging scanning technique Type Journal Article
Year 2013 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 700 Issue Pages 10-21
Keywords AGATA; Pulse shape comparison (PSC); Pulse shape analysis (PSA)
Abstract (down) The imaging scanning technique for the characterisation of large volume, highly segmented, HPGe detectors is demonstrated by comparing the measured spatial response of a symmetric AGATA crystal versus the theoretical calculations obtained with the Multi-Geometry Simulation (MGS) code. The signal rise-times measured as a function of the gamma-ray interaction positions, in both coaxial and planar regions of the detection volume, are presented and confronted with the expected behaviour obtained via MGS. The transition in charge carrier transport behaviour as a function of the depth is studied for the region of the complex electric field. In general, a fairly good agreement between theory and experiment is obtained. Only systematic deviations between simulation and measurement are observed in the critical front part of the AGATA detector. They may be ascribed to a non-linear impurity concentration profile of the germanium crystal.
Address [Goel, N.; Domingo-Pardo, C.; Habermann, T.; Ameil, F.; Engert, T.; Gerl, J.; Kojouharov, I.; Schaffner, H.] GSI Helmholtzzentrum Schwerionenforsch GmbH, D-64291 Darmstadt, Germany, Email: n.goel@gsi.de
Corporate Author Thesis
Publisher Elsevier Science Bv Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:000312811400003 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 1283
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Author HAWC Collaboration (Abeysekara, A.U. et al); Salesa Greus, F.
Title The High-Altitude Water Cherenkov (HAWC) observatory in Mexico: The primary detector Type Journal Article
Year 2023 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 1052 Issue Pages 168253 - 18pp
Keywords Physics – instrumentation and detectors; Water Cherenkov Detectors; Astrophysics; High energy physics – experiment; Nuclear experiment
Abstract (down) The High-Altitude Water Cherenkov (HAWC) observatory is a second-generation continuously operated, wide field-of-view, TeV gamma-ray observatory. The HAWC observatory and its analysis techniques build on experience of the Milagro experiment in using ground-based water Cherenkov detectors for gamma-ray astronomy. HAWC is located on the Sierra Negra volcano in Mexico at an elevation of 4100 meters above sea level. The completed HAWC observatory principal detector (HAWC) consists of 300 closely spaced water Cherenkov detectors, each equipped with four photomultiplier tubes to provide timing and charge information to reconstruct the extensive air shower energy and arrival direction. The HAWC observatory has been optimized to observe transient and steady emission from sources of gamma rays within an energy range from several hundred GeV to several hundred TeV. However, most of the air showers detected are initiated by cosmic rays, allowing studies of cosmic rays also to be performed. This paper describes the characteristics of the HAWC main array and its hardware.
Address [Abeysekara, A. U.; Barber, A. S.; Hona, B.; Kieda, D.; Newbold, M.; Springer, R. W.] Univ Utah, Dept Phys & Astron, Salt Lake City, UT USA, Email: eduardo.delafuentea@academicos.udg.mx
Corporate Author Thesis
Publisher Elsevier Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:001063137300001 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 5674
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Author Latonova, V. et al; Bernabeu, J.; Lacasta, C.; Solaz, C.; Soldevila, U.
Title Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation Type Journal Article
Year 2023 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 1050 Issue Pages 168119 - 5pp
Keywords HL-LHC; ATLAS ITk; Silicon micro-strip sensor; Polysilicon bias resistor; Testchip
Abstract (down) The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb(-1) means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 center dot 10(15) MeVn(eq)/cm(2) and 0.66MGy, respectively, including a safety factor of 1.5. Radiation hard n(+)-in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n(+) implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. We discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips.
Address [Latonova, V.; Federicova, P.; Kroll, J.; Kvasnicka, J.; Mikestikova, M.] Acad Sci Czech Republ, Inst Phys, Slovance 2, Prague 8, Czech Republic, Email: vera.latonova@cern.ch
Corporate Author Thesis
Publisher Elsevier Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:001035405300001 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 5601
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Author Liptak, Z. et al; Marinas, C.
Title Measurements of beam backgrounds in SuperKEKB Phase 2 Type Journal Article
Year 2022 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal Nucl. Instrum. Methods Phys. Res. A
Volume 1040 Issue Pages 167168 - 19pp
Keywords
Abstract (down) The high design luminosity of the SuperKEKB electron–positron collider will result in challenging levels of beam-induced backgrounds in the interaction region. Understanding and mitigating these backgrounds is critical to the success of the Belle II experiment. We report on the first background measurements performed after roll-in of the Belle II detector, a period known as SuperKEKB Phase 2, utilizing both the BEAST II system of dedicated background detectors and the Belle II detector itself. We also report on first revisions to the background simulation made in response to our findings. Backgrounds measured include contributions from synchrotron radiation, beam-gas, Touschek, and injection backgrounds. At the end of Phase 2, single-beam backgrounds originating from the 4 GeV positron Low Energy Ring (LER) agree reasonably well with simulation, while backgrounds from the 7 GeV electron High Energy Ring (HER) are approximately one order of magnitude higher than simulation. We extrapolate these backgrounds forward and conclude it is safe to install the Belle II vertex detector.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 5496
Permanent link to this record