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Author |
Latonova, V. et al; Bernabeu, J.; Lacasta, C.; Solaz, C.; Soldevila, U. |
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Title |
Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation |
Type |
Journal Article |
| |
Year |
2023 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
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Volume |
1050 |
Issue |
|
Pages |
168119 - 5pp |
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Keywords |
HL-LHC; ATLAS ITk; Silicon micro-strip sensor; Polysilicon bias resistor; Testchip |
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Abstract  |
The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb(-1) means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 center dot 10(15) MeVn(eq)/cm(2) and 0.66MGy, respectively, including a safety factor of 1.5. Radiation hard n(+)-in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n(+) implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. We discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips. |
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Address |
[Latonova, V.; Federicova, P.; Kroll, J.; Kvasnicka, J.; Mikestikova, M.] Acad Sci Czech Republ, Inst Phys, Slovance 2, Prague 8, Czech Republic, Email: vera.latonova@cern.ch |
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Elsevier |
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English |
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Edition |
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ISSN |
0168-9002 |
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Conference |
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Notes |
WOS:001035405300001 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
5601 |
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Author |
Etxebeste, A.; Barrio, J.; Muñoz, E.; Oliver, J.F.; Solaz, C.; Llosa, G. |
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Title |
3D position determination in monolithic crystals coupled to SiPMs for PET |
Type |
Journal Article |
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Year |
2016 |
Publication |
Physics in Medicine and Biology |
Abbreviated Journal |
Phys. Med. Biol. |
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Volume |
61 |
Issue |
10 |
Pages |
3914-3934 |
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Keywords |
monolithic crystal; silicon photomultiplier; depth of interaction |
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Abstract |
The interest in using continuous monolithic crystals in positron emission tomography (PET) has grown in the last years. Coupled to silicon photomultipliers (SiPMs), the detector can combine high sensitivity and high resolution, the two main factors to be maximized in a positron emission tomograph. In this work, the position determination capability of a detector comprised of a 12 x 12 x 10 mm(3) LYSO crystal coupled to an 8 x 8-pixel array of SiPMs is evaluated. The 3D interaction position of.-rays is estimated using an analytical model of the light distribution including reflections on the facets of the crystal. Monte Carlo simulations have been performed to evaluate different crystal reflectors and geometries. The method has been characterized and applied to different cases. Intrinsic resolution obtained with the position estimation method used in this work, applied to experimental data, achieves sub-millimetre resolution values. Average resolution over the detector surface for 5 mm thick crystal is similar to 0.9 mm FWHM and similar to 1.2 mm FWHM for 10 mm thick crystal. Depth of interaction resolution is close to 2 mm FWHM in both cases, while the FWTM is similar to 5.3 mm for 5 mm thick crystal and similar to 9.6 mm for 10 mm thick crystal. |
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Address |
[Etxebeste, Ane; Barrio, John; Munoz, Enrique; Oliver, Josep F.; Solaz, Carles; Llosa, Gabriela] Univ Valencia, CSIC, Inst Fis Corpuscular, Valencia, Spain, Email: ane.etxebeste@ific.uv.es |
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Publisher |
Iop Publishing Ltd |
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English |
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ISSN |
0031-9155 |
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Conference |
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Notes |
WOS:000376792800014 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
no |
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Call Number |
IFIC @ pastor @ |
Serial |
2708 |
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Author |
Barrientos, L.; Borja-Lloret, M.; Etxebeste, A.; Muñoz, E.; Oliver, J.F.; Ros, A.; Roser, J.; Senra, C.; Viegas, R.; Llosa, G. |
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Title |
Performance evaluation of MACACO II Compton camera |
Type |
Journal Article |
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Year |
2021 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
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Volume |
1014 |
Issue |
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Pages |
165702 - 7pp |
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Keywords |
Compton camera; Hadron therapy; LaBr3; Silicon photomultipliers |
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Abstract |
The IRIS group at IFIC-Valencia has developed a second version of a Compton camera prototype for hadron therapy treatment monitoring, with the aim of improving the performance with respect to its predecessor. The system is composed of three Lanthanum (III) bromide (LaBr3) crystals coupled to silicon photomultipliers (SiPMs). The detector energy resolution has been improved to 5.6% FWHM at 511 keV and an angular resolution of 8.0 degrees has been obtained. Images of a Na-22 point-like source have been reconstructed selecting two and three interaction events. Moreover, the experimental data have been reproduced with Monte Carlo simulations using a Compton camera module (CCMod) in GATE v8.2 obtaining a good correlation. |
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Address |
[Barrientos, L.; Borja-Lloret, M.; Munoz, E.; Oliver, J. F.; Ros, A.; Roser, J.; Senra, C.; Viegas, R.; Llosa, G.] Univ Valencia, Inst Fis Corpuscular, CSIC, Valencia, Spain, Email: lbarrien@ific.uv.es |
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Publisher |
Elsevier |
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English |
Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0168-9002 |
ISBN |
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Area |
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Expedition |
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Conference |
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Notes |
WOS:000701263400010 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
4976 |
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Author |
Barrientos, L.; Borja-Lloret, M.; Casana, J.V.; Hueso-Gonzalez, F.; Ros, A.; Roser, J.; Senra, C.; Solaz, C.; Viegas, R.; Llosa, G. |
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Title |
System characterization and performance studies with MACACO III Compton camera |
Type |
Journal Article |
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Year |
2023 |
Publication |
Radiation Physics and Chemistry |
Abbreviated Journal |
Radiat. Phys. Chem. |
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Volume |
208 |
Issue |
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Pages |
110922 - 13pp |
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Keywords |
Compton camera; Scintillator crystals; Silicon photomultipliers |
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Abstract |
The IRIS group of IFIC-Valencia has developed a Compton camera prototype. The system detectors are made of Lanthanum (III) bromide scintillator crystals coupled to silicon photomultipliers. Two models of silicon photomultipliers arrays with different micro pixel pitch (25 and 50 μm) have been chosen as possible candidates to improve the response of the new system. Characterization studies with a 22Na point-like source have indicated that the 25 μm photodetector provided better performance in terms of energy resolution (5.2% FWHM at 511 keV) and angular resolution (6.9 degrees FWHM at 1275 keV), and more stability with temperature variations. In addition, MACACO III imaging capabilities have been assessed using a structure composed of thirty-seven 22Na point-like sources. Furthermore, in order to evaluate possible ways of improving the system performance, several studies have been carried out by means of simulations both in realistic and performance improved conditions. In this work, the system performance is evaluated for its future application in different areas. |
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Address |
[Barrientos, L.; Borja-Lloret, M.; Casana, J. V.; Hueso-Gonzalez, F.; Ros, A.; Roser, J.; Senra, C.; Solaz, C.; Viegas, R.; Llosa, G.] CSIC UV, Inst Fis Corpuscular IF, Valencia, Spain, Email: Luis.Barrientos@ific.uv.es; |
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Publisher |
Pergamon-Elsevier Science Ltd |
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Language |
English |
Summary Language |
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Original Title |
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Series Editor |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0969-806x |
ISBN |
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Area |
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Expedition |
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Conference |
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Notes |
WOS:000962800400001 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
no |
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Call Number |
IFIC @ pastor @ |
Serial |
5511 |
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Author |
Benitez, V. et al; Bernabeu, J.; Garcia, C.; Lacasta, C.; Marco, R.; Rodriguez, D.; Santoyo, D.; Solaz, C.; Soldevila, U. |
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Title |
Sensors for the End-cap prototype of the Inner Tracker in the ATLAS Detector Upgrade |
Type |
Journal Article |
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Year |
2016 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
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Volume |
833 |
Issue |
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Pages |
226-232 |
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Keywords |
Silicon radiation detectors; Strip sensors; HL-LHC; ATLAS Upgrade; Inner Tracker (ITk); End-cap |
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Abstract |
The new silicon microstrip sensors of the End-cap part of the HL-LHC ATLAS Inner Tracker (ITk) present a number of challenges due to their complex design features such as the multiple different sensor shapes, the varying strip pitch, or the built-In stereo angle. In order to investigate these specific problems, the “petalet” prototype was defined as a small End-cap prototype. The sensors for the petalet prototype include several new layout and technological solutions to investigate the issues, they have been tested in detail by the collaboration. The sensor description and detailed test results are presented in this paper. New software tools have been developed for the automatic layout generation of the complex designs. The sensors have been fabricated, characterized and delivered to the institutes in the collaboration for their assembly on petalet prototypes. This paper describes the lessons learnt from the design and tests of the new solutions implemented on these sensors, which are being used for the full petal sensor development. This has resulted in the ITIc strip, community acquiring the necessary expertise to develop the full End-cap structure, the petal. |
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Address |
[Benitez, V.; Ullan, M.; Quirion, D.; Pellegrini, G.; Fleta, C.; Lozano, M.] CSIC, CNM, IMB, Campus Univ Bellaterra, Barcelona 08193, Spain, Email: miguel.ullan@imb-cnm.csic.es |
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Corporate Author |
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Publisher |
Elsevier Science Bv |
Place of Publication |
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Language |
English |
Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0168-9002 |
ISBN |
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Medium |
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Area |
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Expedition |
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Conference |
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Notes |
WOS:000383818200032 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
2816 |
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Author |
Andricek, L. et al; Lacasta, C.; Marinas, C.; Vos, M. |
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Title |
Intrinsic resolutions of DEPFET detector prototypes measured at beam tests |
Type |
Journal Article |
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Year |
2011 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
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Volume |
638 |
Issue |
1 |
Pages |
24-32 |
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Keywords |
Silicon pixel detector; Detector resolution; Spatial resolution; DEPFET; Beam test |
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Abstract |
The paper is based on the data of the 2009 DEPFET beam test at CERN SPS. The beam test used beams of pions and electrons with energies between 40 and 120 GeV, and the sensors tested were prototypes with thickness of 450 μm and pixel pitch between 20 and 32 μm. Intrinsic resolutions of the detectors are calculated by disentangling the contributions of measurement errors and multiple scattering in tracking residuals. Properties of the intrinsic resolution estimates and factors that influence them are discussed. For the DEPFET detectors in the beam test, the calculation yields intrinsic resolutions of approximate to 1 μm, with a typical accuracy of 0.1 μm. Bias scan, angle scan, and energy scan are used as example studies to show that the intrinsic resolutions are a useful tool in studies of detector properties. With sufficiently precise telescopes, detailed resolution maps can be constructed and used to study and optimize detector performance. |
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Address |
[Dolezal, Z.; Drasal, Z.; Kodys, P.; Kvasnicka, P.; Malina, L.; Scheirich, J.] Charles Univ Prague, Fac Math & Phys, Inst Particle & Nucl Phys, CR-18000 Prague, Czech Republic, Email: peter.kodys@mff.cuni.cz |
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Corporate Author |
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Publisher |
Elsevier Science Bv |
Place of Publication |
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Language |
English |
Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0168-9002 |
ISBN |
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Medium |
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Area |
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Expedition |
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Conference |
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Notes |
ISI:000290082600005 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
618 |
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Author |
Fernandez-Tejero, J. et al; Soldevila, U. |
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Title |
Humidity sensitivity of large area silicon sensors: Study and implications |
Type |
Journal Article |
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Year |
2020 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
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Volume |
978 |
Issue |
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Pages |
164406 - 6pp |
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Keywords |
Humidity sensitivity; Large area silicon sensors; Slim-edge; HL-LHC |
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Abstract |
The production of large area sensors is one of the main challenges that the ATLAS collaboration faces for the new Inner-Tracker full-silicon detector. During the prototype fabrication phase for the High Luminosity Large Hadron Collider upgrade, several ATLAS institutes observed indications of humidity sensitivity of large area sensors, even at relative humidities well below the dew point. Specifically, prototype Barrel and End-Cap silicon strip sensors fabricated in 6-inch wafers manifest a prompt decrease of the breakdown voltage when operating under high relative humidity, adversely affecting the performance of the sensors. In addition to the investigation of these prototype sensors, a specific fabrication batch with special passivation is also studied, allowing for a deeper understanding of the responsible mechanisms. This work presents an extensive study of this behaviour on large area sensors. The locations of the hotspots at the breakdown voltage at high humidity are revealed using different infrared thermography techniques. Several palliative treatments are attempted, proving the influence of sensor cleaning methods, as well as baking, on the device performance, but no improvement on the humidity sensitivity was achieved. Furthermore, a study of the incidence of the sensitivity in different batches is also presented, introducing a hypothesis of the origins of the humidity sensitivity associated to the sensor edge design, together with passivation thickness and conformity. Several actions to be taken during sensor production and assembly are extracted from this study, in order to minimize the impact of humidity sensitivity on the performance of large area silicon sensors for High Energy Physics experiments. |
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Address |
[Fernandez-Tejero, J.; Avino, O.; Fleta, C.; Ullan, M.; Vellvehi, M.] CSIC, Ctr Nacl Microelect IMB CNM, Campus UAB Bellaterra, Barcelona 08193, Spain, Email: Xavi.Fdez@cern.ch |
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Corporate Author |
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Publisher |
Elsevier |
Place of Publication |
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Editor |
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Language |
English |
Summary Language |
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Original Title |
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Series Editor |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0168-9002 |
ISBN |
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Medium |
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Area |
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Expedition |
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Conference |
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Notes |
WOS:000560076700009 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
4504 |
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Author |
Capra, S.; Mengoni, D.; Dueñas, J.A.; John, P.R.; Gadea, A.; Aliaga, R.J.; Dormard, J.J.; Assie, M.; Pullia, A. |
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Title |
Performance of the new integrated front-end electronics of the TRACE array commissioned with an early silicon detector prototype |
Type |
Journal Article |
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Year |
2019 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
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Volume |
935 |
Issue |
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Pages |
178-184 |
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Keywords |
ASIC; Charge-sensitive preamplifier; Low-noise applications; Particle spectrometry; Dead time; Silicon detector |
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Abstract |
The spectroscopic performances of the new integrated ASIC (Application-Specific Integrated Circuit) preamplifiers for highly segmented silicon detectors have been evaluated with an early silicon detector prototype of the TRacking Array for light Charged Ejectiles (TRACE). The ASICS were mounted on a custom-designed PCB (Printed Circuit Board) and the detector plugged on it. Energy resolution tests, performed on the same detector before and after irradiation, yielded a resolution of 21 keV and 33 keV FWHM respectively. The output signals were acquired with an array of commercial 100-MHz 14-bit digitizers. The preamplifier chip is equipped with an innovative Fast-Reset device that has two functions: it reduces dramatically the dead time of the preamplifier in case of saturation (from milliseconds to microseconds) and extends the spectroscopic dynamic range of the preamplifier by more than one order of magnitude. Other key points of the device are the low noise and the wide bandwidth. |
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Address |
[Capra, S.; Pullia, A.] Univ Milan, Dipartimento Fis, Via Celoria 16, IT-20133 Milan, Italy, Email: stefano.capra@unimi.it |
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Publisher |
Elsevier Science Bv |
Place of Publication |
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Editor |
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Language |
English |
Summary Language |
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Original Title |
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Series Editor |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0168-9002 |
ISBN |
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Medium |
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Area |
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Expedition |
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Conference |
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Notes |
WOS:000470063800026 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
4042 |
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Author |
Viegas, R.; Roser, J.; Barrientos, L.; Borja-Lloret, M.; Casaña, J.V.; Lopez, J.G.; Jimenez-Ramos, M.C.; Hueso-Gonzalez, F.; Ros, A.; Llosa, G. |
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Title |
Characterization of a Compton camera based on the TOFPET2 ASIC |
Type |
Journal Article |
| |
Year |
2023 |
Publication |
Radiation Physics and Chemistry |
Abbreviated Journal |
Radiat. Phys. Chem. |
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Volume |
202 |
Issue |
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Pages |
110507 - 11pp |
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Keywords |
Compton camera; Hadron therapy; LaBr3; PETsys TOFPET2; Silicon photomultipliers |
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Abstract |
The use of Compton cameras for medical imaging and its interest as a hadron therapy treatment monitoring has increased in the last decade with the development of silicon photomultipliers. MACACOp is a Compton camera prototype designed and assembled at the IRIS group of IFIC-Valencia. This Compton camera is based on monolithic Lanthanum (III) Bromide crystals and silicon photomultipliers, and employs the novel TOFPET2 ASIC as readout electronics. This system emerged as an alternative to MACACO II prototype, with the aim of improving its limited time resolution. To test the performance of the ASIC in a Compton camera setup, the prototype was characterized, both in laboratory and in-beam. A time resolution of 1.5 ns was obtained after time corrections, which improves greatly the performance of the MACACO II. Moreover, the results obtained at high photon energies demonstrate the ability of the system to obtain 1 mm displacements of the reconstructed spots. The results reinforce the potential of the system as a monitoring device for hadron therapy. |
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Address |
[Viegas, R.; Roser, J.; Barrientos, L.; Borja-Lloret, M.; Casana, J., V; Hueso-Gonzalez, F.; Ros, A.; Llosa, G.] CSIC UV, Inst Fis Corpuscular IFIC, Valencia, Spain, Email: Rita.Viegas@ific.uv.es |
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Publisher |
Pergamon-Elsevier Science Ltd |
Place of Publication |
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Editor |
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Language |
English |
Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0969-806x |
ISBN |
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Medium |
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Area |
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Expedition |
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Conference |
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Notes |
WOS:000870840600006 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
no |
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Call Number |
IFIC @ pastor @ |
Serial |
5392 |
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| Permanent link to this record |
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Author |
Unno, Y. et al; Garcia, C.; Jimenez, J.; Lacasta, C.; Marti-Garcia, S.; Soldevila, U. |
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Title |
Development of n(+) -in-p large-area silicon microstrip sensors for very high radiation environments-ATLAS12 design and initial results |
Type |
Journal Article |
| |
Year |
2014 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
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Volume |
765 |
Issue |
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Pages |
80-90 |
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Keywords |
Silicon strip; n(+)-in-p; P-type; Radiation-tolerant; HL-LHC; PTP |
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Abstract |
We have been developing a novel radiation tolerant n(+)-in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float zone wafers, where large area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 pm and slim edge space of 450 pm, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers. |
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Address |
[Edwards, S. O.; Pyatt, S.; Thomas, J. P.; Wilson, J. A.] Univ Birmingham, Sch Phys & Astron, Birmingham B15 2TT, W Midlands, England, Email: yoshinobu.unno@kek.jp |
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Publisher |
Elsevier Science Bv |
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Language |
English |
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ISSN |
0168-9002 |
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Notes |
WOS:000344621000016 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
2002 |
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