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Author |
Etxebeste, A.; Barrio, J.; Muñoz, E.; Oliver, J.F.; Solaz, C.; Llosa, G. |
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Title |
3D position determination in monolithic crystals coupled to SiPMs for PET |
Type |
Journal Article |
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Year |
2016 |
Publication |
Physics in Medicine and Biology |
Abbreviated Journal |
Phys. Med. Biol. |
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Volume |
61 |
Issue |
10 |
Pages |
3914-3934 |
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Keywords |
monolithic crystal; silicon photomultiplier; depth of interaction |
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Abstract  |
The interest in using continuous monolithic crystals in positron emission tomography (PET) has grown in the last years. Coupled to silicon photomultipliers (SiPMs), the detector can combine high sensitivity and high resolution, the two main factors to be maximized in a positron emission tomograph. In this work, the position determination capability of a detector comprised of a 12 x 12 x 10 mm(3) LYSO crystal coupled to an 8 x 8-pixel array of SiPMs is evaluated. The 3D interaction position of.-rays is estimated using an analytical model of the light distribution including reflections on the facets of the crystal. Monte Carlo simulations have been performed to evaluate different crystal reflectors and geometries. The method has been characterized and applied to different cases. Intrinsic resolution obtained with the position estimation method used in this work, applied to experimental data, achieves sub-millimetre resolution values. Average resolution over the detector surface for 5 mm thick crystal is similar to 0.9 mm FWHM and similar to 1.2 mm FWHM for 10 mm thick crystal. Depth of interaction resolution is close to 2 mm FWHM in both cases, while the FWTM is similar to 5.3 mm for 5 mm thick crystal and similar to 9.6 mm for 10 mm thick crystal. |
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Address |
[Etxebeste, Ane; Barrio, John; Munoz, Enrique; Oliver, Josep F.; Solaz, Carles; Llosa, Gabriela] Univ Valencia, CSIC, Inst Fis Corpuscular, Valencia, Spain, Email: ane.etxebeste@ific.uv.es |
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Publisher |
Iop Publishing Ltd |
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English |
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ISSN |
0031-9155 |
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Notes |
WOS:000376792800014 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
no |
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Call Number |
IFIC @ pastor @ |
Serial |
2708 |
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Author |
Latonova, V. et al; Bernabeu, J.; Lacasta, C.; Solaz, C.; Soldevila, U. |
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Title |
Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation |
Type |
Journal Article |
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Year |
2023 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
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Volume |
1050 |
Issue |
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Pages |
168119 - 5pp |
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Keywords |
HL-LHC; ATLAS ITk; Silicon micro-strip sensor; Polysilicon bias resistor; Testchip |
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Abstract |
The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb(-1) means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 center dot 10(15) MeVn(eq)/cm(2) and 0.66MGy, respectively, including a safety factor of 1.5. Radiation hard n(+)-in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n(+) implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. We discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips. |
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Address |
[Latonova, V.; Federicova, P.; Kroll, J.; Kvasnicka, J.; Mikestikova, M.] Acad Sci Czech Republ, Inst Phys, Slovance 2, Prague 8, Czech Republic, Email: vera.latonova@cern.ch |
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Elsevier |
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English |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0168-9002 |
ISBN |
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Area |
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Expedition |
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Conference |
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Notes |
WOS:001035405300001 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
5601 |
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Author |
Fernandez-Tejero, J.; Bartl, U.; Docke, M.; Fadeyev, V.; Fleta, C.; Hacker, J.; Hommels, B.; Lacasta, C.; Parzefall, U.; Soldevila, U.; Stocker, G.; Ullan, M.; Unno, Y. |
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Title |
Design and evaluation of large area strip sensor prototypes for the ATLAS Inner Tracker detector |
Type |
Journal Article |
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Year |
2020 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
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Volume |
981 |
Issue |
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Pages |
164536 - 6pp |
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Keywords |
ATLAS; Silicon strip sensors; Large area silicon sensors; Layout design; Prototype evaluation; Market survey |
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Abstract |
The ATLAS community is facing the last stages prior to the production of the upgraded silicon strip Inner Tracker for the High-Luminosity Large Hadron Collider. An extensive Market Survey was carried out in order to evaluate the capability of different foundries to fabricate large area silicon strip sensors, satisfying the ATLAS specifications. The semiconductor manufacturing company, Infineon Technologies AG, was one of the two foundries, along with Hamamatsu Photonics K.K., that reached the last stage of the evaluation for the production of the new devices. The full prototype wafer layout for the participation of Infineon, called ATLAS17LS-IFX, was designed using a newly developed Python-based Automatic Layout Generation Tool, able to rapidly design sensors with different characteristics and dimensions based on a few geometrical and technological input parameters. This work presents the layout design process and the results obtained from the evaluation of the new Infineon large area sensors before and after proton and neutron irradiations, up to fluences expected in the inner layers of the future ATLAS detector. |
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Address |
[Fernandez-Tejero, J.; Fleta, C.; Ullan, M.] CSIC, Ctr Nacl Microelect IMB CNM, Campus UAB Bellaterra, Barcelona 08193, Spain, Email: Xavi.Fdez@cern.ch |
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Publisher |
Elsevier |
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Language |
English |
Summary Language |
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Original Title |
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Series Editor |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0168-9002 |
ISBN |
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Medium |
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Expedition |
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Conference |
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Notes |
WOS:000581799800023 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
4579 |
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Author |
Real, D.; Calvo, D.; Zornoza, J.D.; Manzaneda, M.; Gozzini, R.; Ricolfe-Viala, C.; Lajara, R.; Albiol, F. |
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Title |
Fast Coincidence Filter for Silicon Photomultiplier Dark Count Rate Rejection |
Type |
Journal Article |
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Year |
2024 |
Publication |
Sensors |
Abbreviated Journal |
Sensors |
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Volume |
24 |
Issue |
7 |
Pages |
2084 - 12pp |
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Keywords |
time-to-digital converters; neutrino telescopes; silicon photomultipliers; dark noise rate filtering |
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Abstract |
Silicon Photomultipliers find applications across various fields. One potential Silicon Photomultiplier application domain is neutrino telescopes, where they may enhance the angular resolution. However, the elevated dark count rate associated with Silicon Photomultipliers represents a significant challenge to their widespread utilization. To address this issue, it is proposed to use Silicon Photomultipliers and Photomultiplier Tubes together. The Photomultiplier Tube signals serve as a trigger to mitigate the dark count rate, thereby preventing undue saturation of the available bandwidth. This paper presents an investigation into a fast and resource-efficient method for filtering the Silicon Photomultiplier dark count rate. A low-resource and fast coincident filter has been developed, which removes the Silicon Photomultiplier dark count rate by using as a trigger the Photomultiplier Tube input signals. The architecture of the coincidence filter, together with the first results obtained, which validate the effectiveness of this method, is presented. |
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Address |
[Real, Diego; Calvo, David; Zornoza, Juan de Dios; Manzaneda, Mario; Gozzini, Rebecca; Albiol, Francisco] CSIC Univ Valencia, IFIC Inst Fis Corpuscular, C Catedrat Jose Beltran 2, Paterna 46980, Spain, Email: real@ific.uv.es; |
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Publisher |
Mdpi |
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English |
Summary Language |
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Original Title |
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Series Editor |
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Notes |
WOS:001201226600001 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
no |
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Call Number |
IFIC @ pastor @ |
Serial |
6063 |
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Author |
Studen, A.; Brzezinski, K.; Chesi, E.; Cindro, V.; Clinthorne, N.H.; Cochran, E.; Grosicar, B.; Grkovski, M.; Honscheid, K.; Kagan, H.; Lacasta, C.; Llosa, G.; Mikuz, M.; Stankova, V.; Weilhammer, P.; Zontar, D. |
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Title |
Silicon detectors for combined MR-PET and MR-SPECT imaging |
Type |
Journal Article |
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Year |
2013 |
Publication |
Nuclear Instruments & Methods in Physics Research A |
Abbreviated Journal |
Nucl. Instrum. Methods Phys. Res. A |
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Volume |
702 |
Issue |
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Pages |
88-90 |
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Keywords |
PET; Silicon detectors; SPECT |
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Abstract |
Silicon based devices can extend PET-MR and SPECT-MR imaging to applications, where their advantages in performance outweigh benefits of high statistical counts. Silicon is in many ways an excellent detector material with numerous advantages, among others: excellent energy and spatial resolution, mature processing technology, large signal to noise ratio, relatively low price, availability, versatility and malleability. The signal in silicon is also immune to effects of magnetic field at the level normally used in MR devices. Tests in fields up to 7 T were performed in a study to determine effects of magnetic field on positron range in a silicon PET device. The curvature of positron tracks in direction perpendicular to the field's orientation shortens the distance between emission and annihilation point of the positron. The effect can be fully appreciated for a rotation of the sample for a fixed field direction, compressing range in all dimensions. A popular Ga-68 source was used showing a factor of 2 improvement in image noise compared to zero field operation. There was also a little increase in noise as the reconstructed resolution varied between 2.5 and 1.5 mm. A speculative applications can be recognized in both emission modalities, SPECT and PET. Compton camera is a subspecies of SPECT, where a silicon based scatter as a MR compatible part could inserted into the MR bore and the secondary detector could operate in less constrained environment away from the magnet. Introducing a Compton camera also relaxes requirements of the radiotracers used, extending the range of conceivable photon energies beyond 140.5 keV of the Tc-99m. In PET, one could exploit the compressed sub-millimeter range of positrons in the magnetic field. To exploit the advantage, detectors with spatial resolution commensurate to the effect must be used with silicon being an excellent candidate. Measurements performed outside of the MR achieving spatial resolution below 1 mm are reported. |
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Address |
[Studen, A.; Cindro, V.; Grosicar, B.; Grkovski, M.; Mikuz, M.; Zontar, D.] Jozef Stefan Inst, Ljubljana, Slovenia, Email: andrej.studen@ijs.si |
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Publisher |
Elsevier Science Bv |
Place of Publication |
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Language |
English |
Summary Language |
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Original Title |
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Series Editor |
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Series Title |
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Abbreviated Series Title |
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Series Volume |
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Series Issue |
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Edition |
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ISSN |
0168-9002 |
ISBN |
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Area |
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Conference |
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Notes |
WOS:000314682300026 |
Approved |
no |
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Is ISI |
yes |
International Collaboration |
yes |
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Call Number |
IFIC @ pastor @ |
Serial |
1331 |
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