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Author Unno, Y. et al; Garcia, C.; Jimenez, J.; Lacasta, C.; Marti-Garcia, S.; Soldevila, U.
Title Development of n(+) -in-p large-area silicon microstrip sensors for very high radiation environments-ATLAS12 design and initial results Type Journal Article
Year 2014 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal (up) Nucl. Instrum. Methods Phys. Res. A
Volume 765 Issue Pages 80-90
Keywords Silicon strip; n(+)-in-p; P-type; Radiation-tolerant; HL-LHC; PTP
Abstract We have been developing a novel radiation tolerant n(+)-in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float zone wafers, where large area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 pm and slim edge space of 450 pm, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers.
Address [Edwards, S. O.; Pyatt, S.; Thomas, J. P.; Wilson, J. A.] Univ Birmingham, Sch Phys & Astron, Birmingham B15 2TT, W Midlands, England, Email: yoshinobu.unno@kek.jp
Corporate Author Thesis
Publisher Elsevier Science Bv Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:000344621000016 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 2002
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Author Ullan, M.; Benitez, V.; Quirion, D.; Zabala, M.; Pellegrini, G.; Lozano, M.; Lacasta, C.; Soldevila, U.; Garcia, C.; Fadeyev, V.; Wortman, J.; DeFilippis, J.; Shumko, M.; Grillo, A.A.; Sadrozinski, H.F.W.
Title Low-resistance strip sensors for beam-loss event protection Type Journal Article
Year 2014 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal (up) Nucl. Instrum. Methods Phys. Res. A
Volume 765 Issue Pages 252-257
Keywords Silicon radiation detectors; Strip sensors; Punch through protection; Beam loss; HL-LHC; ATLAS Upgrade
Abstract AC coupled silicon strip sensors can be damaged in case of a beam loss due to the possibility of a large charge accumulation in the bulk, developing very high voltages across the coupling capacitors which can destroy them. Punch-through structures are currently used to avoid this problem helping to evacuate the accumulated charge as large voltages are developing. Nevertheless, previous experiments, performed with laser pulses, have shown that these structures can become ineffective in relatively long strips. The large value of the implant resistance can effectively isolate the “far” end of the strip from the punchthrough structure leading to large voltages. We present here our developments to fabricate lowresistance strip sensors to avoid this problem. The deposition of a conducting material in contact with the implants drastically reduces the strip resistance, assuring the effectiveness of the punch-through structures. First devices have been fabricated with this new technology. Initial results with laser tests show the expected reduction in peak voltages on the low resistivity implants. Other aspects of the sensor performance, including the signal formation, are not affected by the new technology.
Address [Ullan, M.; Benitez, V.; Quirion, D.; Zabala, M.; Pellegrini, G.; Lozano, M.] CSIC, Ctr Nacl Microelect IMB CNM, Barcelona 08193, Spain, Email: Miguel.Ullan@imb-cnm.csic.es
Corporate Author Thesis
Publisher Elsevier Science Bv Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:000344621000048 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 2003
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Author Grkovski, M.; Brzezinski, K.; Cindro, V.; Clinthorne, N.H.; Kagan, H.; Lacasta, C.; Mikuz, M.; Solaz, C.; Studen, A.; Weilhammer, P.; Zontar, D.
Title Evaluation of a high resolution silicon PET insert module Type Journal Article
Year 2015 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal (up) Nucl. Instrum. Methods Phys. Res. A
Volume 788 Issue Pages 86-94
Keywords Positron emission tomography; Silicon detectors; PET insert; Image reconstruction
Abstract Conventional PET systems can be augmented with additional detectors placed in close proximity of the region of interest. We developed a high resolution PET insert module to evaluate the added benefit of such a combination. The insert module consists of two back-to-back 1 mm thick silicon sensors, each segmented into 1040 1 mm(2) pads arranged in a 40 by 26 array. A set of 16 VATAGP7.1 ASICs and a custom assembled data acquisition board were used to read out the signal from the insert module. Data were acquired in slice (20) geometry with a Jaszczak phantom (rod diameters of 12-4.8 mm) Filled with F-18-FDG and the images were reconstructed with ML-EM method. Both data with full and limited angular coverage from the insert module were considered and three types of coincidence events were combined. The ratio of high-resolution data that substantially improves quality of the reconstructed image for the region near the surface of the insert module was estimated to be about 4%. Results from our previous studies suggest that such ratio could be achieved at a moderate technological expense by using an equivalent of two insert modules (an effective sensor thickness of 4 mm).
Address [Grkovski, Milan; Cindro, Vladimir; Mikuz, Marko; Studen, Andrej; Zontar, Dejan] Jozef Stefan Inst, Ljubljana, Slovenia, Email: milan.grkovski@ijs.si
Corporate Author Thesis
Publisher Elsevier Science Bv Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:000354870700016 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 2232
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Author Benitez, V. et al; Bernabeu, J.; Garcia, C.; Lacasta, C.; Marco, R.; Rodriguez, D.; Santoyo, D.; Solaz, C.; Soldevila, U.
Title Sensors for the End-cap prototype of the Inner Tracker in the ATLAS Detector Upgrade Type Journal Article
Year 2016 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal (up) Nucl. Instrum. Methods Phys. Res. A
Volume 833 Issue Pages 226-232
Keywords Silicon radiation detectors; Strip sensors; HL-LHC; ATLAS Upgrade; Inner Tracker (ITk); End-cap
Abstract The new silicon microstrip sensors of the End-cap part of the HL-LHC ATLAS Inner Tracker (ITk) present a number of challenges due to their complex design features such as the multiple different sensor shapes, the varying strip pitch, or the built-In stereo angle. In order to investigate these specific problems, the “petalet” prototype was defined as a small End-cap prototype. The sensors for the petalet prototype include several new layout and technological solutions to investigate the issues, they have been tested in detail by the collaboration. The sensor description and detailed test results are presented in this paper. New software tools have been developed for the automatic layout generation of the complex designs. The sensors have been fabricated, characterized and delivered to the institutes in the collaboration for their assembly on petalet prototypes. This paper describes the lessons learnt from the design and tests of the new solutions implemented on these sensors, which are being used for the full petal sensor development. This has resulted in the ITIc strip, community acquiring the necessary expertise to develop the full End-cap structure, the petal.
Address [Benitez, V.; Ullan, M.; Quirion, D.; Pellegrini, G.; Fleta, C.; Lozano, M.] CSIC, CNM, IMB, Campus Univ Bellaterra, Barcelona 08193, Spain, Email: miguel.ullan@imb-cnm.csic.es
Corporate Author Thesis
Publisher Elsevier Science Bv Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:000383818200032 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 2816
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Author Llosa, G.
Title SiPM-based Compton cameras Type Journal Article
Year 2019 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal (up) Nucl. Instrum. Methods Phys. Res. A
Volume 926 Issue Pages 148-152
Keywords Compton camera; Silicon photomultiplier (SiPM)
Abstract Compton cameras have been developed for almost fifty years in various fields (astronomy, medical imaging, safety and industrial inspections, etc.), employing different types of detectors. Their potential use has gained renewed interest with the emergence of high light yield scintillator crystals and silicon photomultipliers (SiPMs). This combination provides good performance and operation simplicity at an affordable cost, raising again the interest in this type of systems. SiPM-based Compton cameras are being assessed for diverse applications with promising results.
Address [Llosa, G.] UVEG, CSIC, Inst Fis Corpuscular IFIC, C Catedrat Beltran 2, E-46980 Valencia, Spain, Email: llosa@ific.uv.es
Corporate Author Thesis
Publisher Elsevier Science Bv Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:000461775500011 Approved no
Is ISI yes International Collaboration no
Call Number IFIC @ pastor @ Serial 3951
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Author Capra, S.; Mengoni, D.; Dueñas, J.A.; John, P.R.; Gadea, A.; Aliaga, R.J.; Dormard, J.J.; Assie, M.; Pullia, A.
Title Performance of the new integrated front-end electronics of the TRACE array commissioned with an early silicon detector prototype Type Journal Article
Year 2019 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal (up) Nucl. Instrum. Methods Phys. Res. A
Volume 935 Issue Pages 178-184
Keywords ASIC; Charge-sensitive preamplifier; Low-noise applications; Particle spectrometry; Dead time; Silicon detector
Abstract The spectroscopic performances of the new integrated ASIC (Application-Specific Integrated Circuit) preamplifiers for highly segmented silicon detectors have been evaluated with an early silicon detector prototype of the TRacking Array for light Charged Ejectiles (TRACE). The ASICS were mounted on a custom-designed PCB (Printed Circuit Board) and the detector plugged on it. Energy resolution tests, performed on the same detector before and after irradiation, yielded a resolution of 21 keV and 33 keV FWHM respectively. The output signals were acquired with an array of commercial 100-MHz 14-bit digitizers. The preamplifier chip is equipped with an innovative Fast-Reset device that has two functions: it reduces dramatically the dead time of the preamplifier in case of saturation (from milliseconds to microseconds) and extends the spectroscopic dynamic range of the preamplifier by more than one order of magnitude. Other key points of the device are the low noise and the wide bandwidth.
Address [Capra, S.; Pullia, A.] Univ Milan, Dipartimento Fis, Via Celoria 16, IT-20133 Milan, Italy, Email: stefano.capra@unimi.it
Corporate Author Thesis
Publisher Elsevier Science Bv Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:000470063800026 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 4042
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Author Babiano, V.; Balibrea, J.; Caballero, L.; Calvo, D.; Ladarescu, I.; Mira Prats, S.; Domingo-Pardo, C.
Title First i-TED demonstrator: A Compton imager with Dynamic Electronic Collimation Type Journal Article
Year 2020 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal (up) Nucl. Instrum. Methods Phys. Res. A
Volume 953 Issue Pages 163228 - 9pp
Keywords Compton imaging; Position-sensitive detectors; Monolithic crystals; Silicon photomultiplier
Abstract i-TED consists of both a total energy detector and a Compton camera primarily intended for the measurement of neutron capture cross sections by means of the simultaneous combination of neutron time-of-flight (TOF) and gamma-ray imaging techniques. TOF allows one to obtain a neutron-energy differential capture yield, whereas the imaging capability is intended for the discrimination of radiative background sources, that have a spatial origin different from that of the capture sample under investigation. A distinctive feature of i-TED is the embedded Dynamic Electronic Collimation (DEC) concept, which allows for a trade-off between efficiency and image resolution. Here we report on some general design considerations and first performance characterization measurements made with an i-TED demonstrator in order to explore its gamma-ray detection and imaging capabilities.
Address [Babiano, V; Balibrea, J.; Caballero, L.; Calvo, D.; Ladarescu, I; Mira Prats, S.; Domingo-Pardo, C.] Univ Valencia, CSIC, Inst Fis Corpuscular, Valencia, Spain, Email: domingo@ific.uv.es
Corporate Author Thesis
Publisher Elsevier Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:000506419900045 Approved no
Is ISI yes International Collaboration no
Call Number IFIC @ pastor @ Serial 4250
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Author Fernandez-Tejero, J. et al; Soldevila, U.
Title Humidity sensitivity of large area silicon sensors: Study and implications Type Journal Article
Year 2020 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal (up) Nucl. Instrum. Methods Phys. Res. A
Volume 978 Issue Pages 164406 - 6pp
Keywords Humidity sensitivity; Large area silicon sensors; Slim-edge; HL-LHC
Abstract The production of large area sensors is one of the main challenges that the ATLAS collaboration faces for the new Inner-Tracker full-silicon detector. During the prototype fabrication phase for the High Luminosity Large Hadron Collider upgrade, several ATLAS institutes observed indications of humidity sensitivity of large area sensors, even at relative humidities well below the dew point. Specifically, prototype Barrel and End-Cap silicon strip sensors fabricated in 6-inch wafers manifest a prompt decrease of the breakdown voltage when operating under high relative humidity, adversely affecting the performance of the sensors. In addition to the investigation of these prototype sensors, a specific fabrication batch with special passivation is also studied, allowing for a deeper understanding of the responsible mechanisms. This work presents an extensive study of this behaviour on large area sensors. The locations of the hotspots at the breakdown voltage at high humidity are revealed using different infrared thermography techniques. Several palliative treatments are attempted, proving the influence of sensor cleaning methods, as well as baking, on the device performance, but no improvement on the humidity sensitivity was achieved. Furthermore, a study of the incidence of the sensitivity in different batches is also presented, introducing a hypothesis of the origins of the humidity sensitivity associated to the sensor edge design, together with passivation thickness and conformity. Several actions to be taken during sensor production and assembly are extracted from this study, in order to minimize the impact of humidity sensitivity on the performance of large area silicon sensors for High Energy Physics experiments.
Address [Fernandez-Tejero, J.; Avino, O.; Fleta, C.; Ullan, M.; Vellvehi, M.] CSIC, Ctr Nacl Microelect IMB CNM, Campus UAB Bellaterra, Barcelona 08193, Spain, Email: Xavi.Fdez@cern.ch
Corporate Author Thesis
Publisher Elsevier Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:000560076700009 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 4504
Permanent link to this record
 

 
Author Helling, C. et al; Bernabeu, J.; Lacasta, C.; Solaz, C.
Title Strip sensor performance in prototype modules built for ATLAS ITk Type Journal Article
Year 2020 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal (up) Nucl. Instrum. Methods Phys. Res. A
Volume 978 Issue Pages 164402 - 6pp
Keywords Silicon strip sensors; Strip module; Inter-strip isolation; Readout noise
Abstract ATLAS experiment is preparing an upgrade of its detector for High-Luminosity LHC (HL-LHC) operation. The upgrade involves installation of the new all-silicon Inner Tracker (ITk). In the context of the ITk preparations, more than 80 strip modules were built with prototype barrel sensors. They were tested with electrical readout on a per-channel basis. In general, an excellent performance was observed, consistent with previous ASIC-level and sensor-level tests. However, the lessons learned included two phenomena important for the future phases of the project. First was the need to store and test the modules in a dry environment due to humidity sensitivity of the sensors. The second was an observation of high noise regions for 2 modules. The high noise regions were tested further in several ways, including monitoring the performance as a function of time and bias voltage. Additionally, direct sensor-level tests were performed on the affected channels. The inter-strip resistance and bias resistance tests showed low values, indicating a temporary loss of the inter-strip isolation. A subsequent recovery of the noise performance was observed. We present the test details, an analysis of how the inter-strip isolation affects the module noise, and the relationship with sensor-level quality control tests.
Address [Helling, C.; Affolder, A. A.; Fadeyev, V.; Galloway, Z.; Gignac, M.; Gunnell, J.; Martinez-Mckinney, F.; Kang, N.; Yarwick, J.] Univ Calif Santa Cruz, Santa Cruz Inst Particle Phys, Santa Cruz, CA 95064 USA, Email: fadeyev@ucsc.edu
Corporate Author Thesis
Publisher Elsevier Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:000560076700015 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 4505
Permanent link to this record
 

 
Author Fernandez-Tejero, J.; Bartl, U.; Docke, M.; Fadeyev, V.; Fleta, C.; Hacker, J.; Hommels, B.; Lacasta, C.; Parzefall, U.; Soldevila, U.; Stocker, G.; Ullan, M.; Unno, Y.
Title Design and evaluation of large area strip sensor prototypes for the ATLAS Inner Tracker detector Type Journal Article
Year 2020 Publication Nuclear Instruments & Methods in Physics Research A Abbreviated Journal (up) Nucl. Instrum. Methods Phys. Res. A
Volume 981 Issue Pages 164536 - 6pp
Keywords ATLAS; Silicon strip sensors; Large area silicon sensors; Layout design; Prototype evaluation; Market survey
Abstract The ATLAS community is facing the last stages prior to the production of the upgraded silicon strip Inner Tracker for the High-Luminosity Large Hadron Collider. An extensive Market Survey was carried out in order to evaluate the capability of different foundries to fabricate large area silicon strip sensors, satisfying the ATLAS specifications. The semiconductor manufacturing company, Infineon Technologies AG, was one of the two foundries, along with Hamamatsu Photonics K.K., that reached the last stage of the evaluation for the production of the new devices. The full prototype wafer layout for the participation of Infineon, called ATLAS17LS-IFX, was designed using a newly developed Python-based Automatic Layout Generation Tool, able to rapidly design sensors with different characteristics and dimensions based on a few geometrical and technological input parameters. This work presents the layout design process and the results obtained from the evaluation of the new Infineon large area sensors before and after proton and neutron irradiations, up to fluences expected in the inner layers of the future ATLAS detector.
Address [Fernandez-Tejero, J.; Fleta, C.; Ullan, M.] CSIC, Ctr Nacl Microelect IMB CNM, Campus UAB Bellaterra, Barcelona 08193, Spain, Email: Xavi.Fdez@cern.ch
Corporate Author Thesis
Publisher Elsevier Place of Publication Editor
Language English Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes WOS:000581799800023 Approved no
Is ISI yes International Collaboration yes
Call Number IFIC @ pastor @ Serial 4579
Permanent link to this record