TY  - JOUR
AU  - Mandic, I.
AU  - Cindro, V.
AU  - Debevc, J.
AU  - Gorisek, A.
AU  - Hiti, B.
AU  - Kramberger, G.
AU  - Skomina, P.
AU  - Zavrtanik, M.
AU  - Mikuz, M.
AU  - Vilella, E.
AU  - Zhang, C.
AU  - Powell, S.
AU  - Franks, M.
AU  - Marco-Hernandez, R.
AU  - Steininger, H.
PY  - 2022
DA  - 2022//
TI  - Study of neutron irradiation effects in Depleted CMOS detector structures
T2  - J. Instrum.
JO  - Journal of Instrumentation
SP  - P03030 - 13pp
VL  - 17
IS  - 3
PB  - IOP Publishing Ltd
KW  - Particle tracking detectors (Solid-state detectors)
KW  - Si microstrip and pad detectors
KW  - Solid state detectors
AB  - In this paper the results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivities ranging from 0.5 to 3 k Omega cm are presented. Samples were irradiated with reactor neutrons up to a fluence of 2.10(15) n(eq)/cm(2). The depletion depth was measured with Edge-TCT. The effective space charge concentration N-eff was estimated from the dependence of the depletion depth on bias voltage and studied as a function of neutron fluence. The dependence of N-eff on fluence changes with initial acceptor concentration in agreement with other measurements with p-type silicon. A long term accelerated annealing study of N-eff and detector current up to 1280 minutes at 60 degrees C was made. It was found that N-eff and current in reverse biased detector behave as expected for irradiated silicon.
SN  - 1748-0221
UR  - https://arxiv.org/abs/2112.10738
UR  - https://doi.org/10.1088/1748-0221/17/03/P03030
DO  - 10.1088/1748-0221/17/03/P03030
LA  - English
N1  - WOS:000784713600004
ID  - Mandic_etal2022
ER  -