PT Journal
AU Mandic, I
   Cindro, V
   Debevc, J
   Gorisek, A
   Hiti, B
   Kramberger, G
   Skomina, P
   Zavrtanik, M
   Mikuz, M
   Vilella, E
   Zhang, C
   Powell, S
   Franks, M
   Marco-Hernandez, R
   Steininger, H
TI Study of neutron irradiation effects in Depleted CMOS detector structures
SO Journal of Instrumentation
JI J. Instrum.
PY 2022
BP P03030 - 13pp
VL 17
IS 3
DI 10.1088/1748-0221/17/03/P03030
LA English
DE Particle tracking detectors (Solid-state detectors); Si microstrip and pad detectors; Solid state detectors
AB In this paper the results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivities ranging from 0.5 to 3 k Omega cm are presented. Samples were irradiated with reactor neutrons up to a fluence of 2.10(15) n(eq)/cm(2). The depletion depth was measured with Edge-TCT. The effective space charge concentration N-eff was estimated from the dependence of the depletion depth on bias voltage and studied as a function of neutron fluence. The dependence of N-eff on fluence changes with initial acceptor concentration in agreement with other measurements with p-type silicon. A long term accelerated annealing study of N-eff and detector current up to 1280 minutes at 60 degrees C was made. It was found that N-eff and current in reverse biased detector behave as expected for irradiated silicon.
ER