%0 Journal Article
%T Study of neutron irradiation effects in Depleted CMOS detector structures
%A Mandic, I.
%A Cindro, V.
%A Debevc, J.
%A Gorisek, A.
%A Hiti, B.
%A Kramberger, G.
%A Skomina, P.
%A Zavrtanik, M.
%A Mikuz, M.
%A Vilella, E.
%A Zhang, C.
%A Powell, S.
%A Franks, M.
%A Marco-Hernandez, R.
%A Steininger, H.
%J Journal of Instrumentation
%D 2022
%V 17
%N 3
%I IOP Publishing Ltd
%@ 1748-0221
%G English
%F Mandic_etal2022
%O WOS:000784713600004
%O exported from refbase (https://references.ific.uv.es/refbase/show.php?record=5208), last updated on Sat, 07 May 2022 09:53:35 +0000
%X In this paper the results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivities ranging from 0.5 to 3 k Omega cm are presented. Samples were irradiated with reactor neutrons up to a fluence of 2.10(15) n(eq)/cm(2). The depletion depth was measured with Edge-TCT. The effective space charge concentration N-eff was estimated from the dependence of the depletion depth on bias voltage and studied as a function of neutron fluence. The dependence of N-eff on fluence changes with initial acceptor concentration in agreement with other measurements with p-type silicon. A long term accelerated annealing study of N-eff and detector current up to 1280 minutes at 60 degrees C was made. It was found that N-eff and current in reverse biased detector behave as expected for irradiated silicon.
%K Particle tracking detectors (Solid-state detectors)
%K Si microstrip and pad detectors
%K Solid state detectors
%R 10.1088/1748-0221/17/03/P03030
%U https://arxiv.org/abs/2112.10738
%U https://doi.org/10.1088/1748-0221/17/03/P03030
%P P03030 - 13pp