@Article{Mandic_etal2022,
author="Mandic, I.
and Cindro, V.
and Debevc, J.
and Gorisek, A.
and Hiti, B.
and Kramberger, G.
and Skomina, P.
and Zavrtanik, M.
and Mikuz, M.
and Vilella, E.
and Zhang, C.
and Powell, S.
and Franks, M.
and Marco-Hernandez, R.
and Steininger, H.",
title="Study of neutron irradiation effects in Depleted CMOS detector structures",
journal="Journal of Instrumentation",
year="2022",
publisher="IOP Publishing Ltd",
volume="17",
number="3",
pages="P03030 - 13pp",
optkeywords="Particle tracking detectors (Solid-state detectors); Si microstrip and pad detectors; Solid state detectors",
abstract="In this paper the results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivities ranging from 0.5 to 3 k Omega cm are presented. Samples were irradiated with reactor neutrons up to a fluence of 2.10(15) n(eq)/cm(2). The depletion depth was measured with Edge-TCT. The effective space charge concentration N-eff was estimated from the dependence of the depletion depth on bias voltage and studied as a function of neutron fluence. The dependence of N-eff on fluence changes with initial acceptor concentration in agreement with other measurements with p-type silicon. A long term accelerated annealing study of N-eff and detector current up to 1280 minutes at 60 degrees C was made. It was found that N-eff and current in reverse biased detector behave as expected for irradiated silicon.",
optnote="WOS:000784713600004",
optnote="exported from refbase (https://references.ific.uv.es/refbase/show.php?record=5208), last updated on Sat, 07 May 2022 09:53:35 +0000",
issn="1748-0221",
doi="10.1088/1748-0221/17/03/P03030",
opturl="https://arxiv.org/abs/2112.10738",
opturl="https://doi.org/10.1088/1748-0221/17/03/P03030",
language="English"
}