PT Journal
AU ATLAS Collaboration (Aaboud, Mea
   Alvarez Piqueras, D
   Aparisi Pozo, JA
   Bailey, AJ
   Barranco Navarro, L
   Cabrera Urban, S
   Castillo, FL
   Castillo Gimenez, V
   Cerda Alberich, L
   Costa, MJ
   Escobar, C
   Estrada Pastor, O
   Ferrer, A
   Fiorini, L
   Fullana Torregrosa, E
   Fuster, J
   Garcia, C
   Garcia Navarro, JE
   Gonzalez de la Hoz, S
   Gonzalvo Rodriguez, GR
   Higon-Rodriguez, E
   Jimenez Pena, J
   Lacasta, C
   Lozano Bahilo, JJ
   Madaffari, D
   Mamuzic, J
   Marti-Garcia, S
   Melini, D
   Miñano, M
   Mitsou, VA
   Rodriguez Bosca, S
   Rodriguez Rodriguez, D
   Ruiz-Martinez, A
   Salt, J
   Santra, A
   Soldevila, U
   Sanchez, J
   Valero, A
   Valls Ferrer, JA
   Vos, M
TI Modelling radiation damage to pixel sensors in the ATLAS detector
SO Journal of Instrumentation
JI J. Instrum.
PY 2019
BP P06012 - 52pp
VL 14
DI 10.1088/1748-0221/14/06/P06012
LA English
DE Detector modelling and simulations II (electric fields; charge transport; multiplication and induction; pulse formation; electron emission; etc); Radiation-hard detectors; Solid state detectors
AB Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS experiment at the LHC. Given their close proximity to the interaction point, these detectors will be exposed to an unprecedented amount of radiation over their lifetime. The current pixel detector will receive damage from non-ionizing radiation in excess of 10(15) 1 MeV n(eq)/cm(2), while the pixel detector designed for the high-luminosity LHC must cope with an order of magnitude larger fluence. This paper presents a digitization model incorporating effects of radiation damage to the pixel sensors. The model is described in detail and predictions for the charge collection efficiency and Lorentz angle are compared with collision data collected between 2015 and 2017 (<= 10(15) 1 MeV n(eq)/cm(2)).
ER