TY  - JOUR
AU  - Decoster, S.
AU  - Cottenier, S.
AU  - Wahl, U.
AU  - Correia, J. G.
AU  - Pereira, L. M. C.
AU  - Lacasta, C.
AU  - Da Silva, M. R.
AU  - Vantomme, A.
PY  - 2010
DA  - 2010//
TI  - Diluted manganese on the bond-centered site in germanium
T2  - Appl. Phys. Lett.
JO  - Applied Physics Letters
SP  - 151914
EP  - 3pp
VL  - 97
IS  - 15
PB  - Amer Inst Physics
AB  - The functional properties of Mn-doped Ge depend to large extent on the lattice location of the Mn impurities. Here, we present a lattice location study of implanted diluted Mn by means of electron emission channeling. Surprisingly, in addition to the expected substitutional lattice position, a large fraction of the Mn impurities occupies the bond-centered site. Corroborated by ab initio calculations, the bond-centered Mn is related to Mn-vacancy complexes. These unexpected results call for a reassessment of the theoretical studies on the electrical and magnetic behavior of Mn-doped Ge, hereby including the possible role of Mn-vacancy complexes.
SN  - 0003-6951
UR  - https://doi.org/10.1063/1.3501123
DO  - 10.1063/1.3501123
LA  - English
N1  - ISI:000283216900030
ID  - Decoster_etal2010
ER  -