PT Journal
AU Decoster, S
   Cottenier, S
   Wahl, U
   Correia, JG
   Pereira, LMC
   Lacasta, C
   Da Silva, MR
   Vantomme, A
TI Diluted manganese on the bond-centered site in germanium
SO Applied Physics Letters
JI Appl. Phys. Lett.
PY 2010
BP 151914
EP 3pp
VL 97
IS 15
DI 10.1063/1.3501123
LA English
AB The functional properties of Mn-doped Ge depend to large extent on the lattice location of the Mn impurities. Here, we present a lattice location study of implanted diluted Mn by means of electron emission channeling. Surprisingly, in addition to the expected substitutional lattice position, a large fraction of the Mn impurities occupies the bond-centered site. Corroborated by ab initio calculations, the bond-centered Mn is related to Mn-vacancy complexes. These unexpected results call for a reassessment of the theoretical studies on the electrical and magnetic behavior of Mn-doped Ge, hereby including the possible role of Mn-vacancy complexes.
ER