%0 Journal Article
%T Diluted manganese on the bond-centered site in germanium
%A Decoster, S.
%A Cottenier, S.
%A Wahl, U.
%A Correia, J. G.
%A Pereira, L. M. C.
%A Lacasta, C.
%A Da Silva, M. R.
%A Vantomme, A.
%J Applied Physics Letters
%D 2010
%V 97
%N 15
%I Amer Inst Physics
%@ 0003-6951
%G English
%F Decoster_etal2010
%O ISI:000283216900030
%O exported from refbase (https://references.ific.uv.es/refbase/show.php?record=357), last updated on Wed, 23 Mar 2011 16:04:17 +0000
%X The functional properties of Mn-doped Ge depend to large extent on the lattice location of the Mn impurities. Here, we present a lattice location study of implanted diluted Mn by means of electron emission channeling. Surprisingly, in addition to the expected substitutional lattice position, a large fraction of the Mn impurities occupies the bond-centered site. Corroborated by ab initio calculations, the bond-centered Mn is related to Mn-vacancy complexes. These unexpected results call for a reassessment of the theoretical studies on the electrical and magnetic behavior of Mn-doped Ge, hereby including the possible role of Mn-vacancy complexes.
%R 10.1063/1.3501123
%U https://doi.org/10.1063/1.3501123
%P 151914-3pp