@Article{Decoster_etal2010,
author="Decoster, S.
and Cottenier, S.
and Wahl, U.
and Correia, J. G.
and Pereira, L. M. C.
and Lacasta, C.
and Da Silva, M. R.
and Vantomme, A.",
title="Diluted manganese on the bond-centered site in germanium",
journal="Applied Physics Letters",
year="2010",
publisher="Amer Inst Physics",
volume="97",
number="15",
pages="151914--3pp",
abstract="The functional properties of Mn-doped Ge depend to large extent on the lattice location of the Mn impurities. Here, we present a lattice location study of implanted diluted Mn by means of electron emission channeling. Surprisingly, in addition to the expected substitutional lattice position, a large fraction of the Mn impurities occupies the bond-centered site. Corroborated by ab initio calculations, the bond-centered Mn is related to Mn-vacancy complexes. These unexpected results call for a reassessment of the theoretical studies on the electrical and magnetic behavior of Mn-doped Ge, hereby including the possible role of Mn-vacancy complexes.",
optnote="ISI:000283216900030",
optnote="exported from refbase (https://references.ific.uv.es/refbase/show.php?record=357), last updated on Wed, 23 Mar 2011 16:04:17 +0000",
issn="0003-6951",
doi="10.1063/1.3501123",
opturl="https://doi.org/10.1063/1.3501123",
language="English"
}