TY  - JOUR
AU  - Unno, Y. et al
AU  - Garcia, C.
AU  - Jimenez, J.
AU  - Lacasta, C.
AU  - Marti-Garcia, S.
AU  - Soldevila, U.
PY  - 2014
DA  - 2014//
TI  - Development of n(+) -in-p large-area silicon microstrip sensors for very high radiation environments-ATLAS12 design and initial results
T2  - Nucl. Instrum. Methods Phys. Res. A
JO  - Nuclear Instruments & Methods in Physics Research A
SP  - 80
EP  - 90
VL  - 765
PB  - Elsevier Science Bv
KW  - Silicon strip
KW  - n(+)-in-p
KW  - P-type
KW  - Radiation-tolerant
KW  - HL-LHC
KW  - PTP
AB  - We have been developing a novel radiation tolerant n(+)-in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float zone wafers, where large area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 pm and slim edge space of 450 pm, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers.
SN  - 0168-9002
UR  - https://doi.org/10.1016/j.nima.2014.06.086
DO  - 10.1016/j.nima.2014.06.086
LA  - English
N1  - WOS:000344621000016
ID  - Unno_etal2014
ER  -