PT Journal
AU Unno, Yea
   Garcia, C
   Jimenez, J
   Lacasta, C
   Marti-Garcia, S
   Soldevila, U
TI Development of n(+) -in-p large-area silicon microstrip sensors for very high radiation environments-ATLAS12 design and initial results
SO Nuclear Instruments & Methods in Physics Research A
JI Nucl. Instrum. Methods Phys. Res. A
PY 2014
BP 80
EP 90
VL 765
DI 10.1016/j.nima.2014.06.086
LA English
DE Silicon strip; n(+)-in-p; P-type; Radiation-tolerant; HL-LHC; PTP
AB We have been developing a novel radiation tolerant n(+)-in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float zone wafers, where large area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 pm and slim edge space of 450 pm, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers.
ER