%0 Journal Article
%T Development of n(+) -in-p large-area silicon microstrip sensors for very high radiation environments-ATLAS12 design and initial results
%A Unno, Y. et al
%A Garcia, C.
%A Jimenez, J.
%A Lacasta, C.
%A Marti-Garcia, S.
%A Soldevila, U.
%J Nuclear Instruments & Methods in Physics Research A
%D 2014
%V 765
%I Elsevier Science Bv
%@ 0168-9002
%G English
%F Unno_etal2014
%O WOS:000344621000016
%O exported from refbase (https://references.ific.uv.es/refbase/show.php?record=2002), last updated on Thu, 11 Dec 2014 12:50:01 +0000
%X We have been developing a novel radiation tolerant n(+)-in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float zone wafers, where large area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 pm and slim edge space of 450 pm, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers.
%K Silicon strip
%K n(+)-in-p
%K P-type
%K Radiation-tolerant
%K HL-LHC
%K PTP
%R 10.1016/j.nima.2014.06.086
%U https://doi.org/10.1016/j.nima.2014.06.086
%P 80-90