TY - JOUR AU - Poley, L. AU - Blue, A. AU - Bloch, I. AU - Buttar, C. AU - Fadeyev, V. AU - Fernandez-Tejero, J. AU - Fleta, C. AU - Hacker, J. AU - Lacasta, C. AU - MiƱano, M. AU - Renzmann, M. AU - Rossi, E. AU - Sawyer, C. AU - Sperlich, D. AU - Stegler, M. AU - Ullan, M. AU - Unno, Y. PY - 2019 DA - 2019// TI - Mapping the depleted area of silicon diodes using a micro-focused X-ray beam T2 - J. Instrum. JO - Journal of Instrumentation SP - P03024 - 14pp VL - 14 PB - Iop Publishing Ltd KW - Si microstrip and pad detectors KW - Detector design and construction technologies and materials KW - Particle tracking detectors (Solid-state detectors) KW - Radiation-hard detectors AB - For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker (ITk). The ITk will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of 500V to maintain a low noise and power dissipation. In order to minimise sensor leakage currents, particularly in the high-radiation environment inside the ATLAS detector, sensors are foreseen to be operated at low temperatures and to be manufactured from wafers with a high bulk resistivity of several k Omega.cm. Simulations showed the electric field inside sensors with high bulk resistivity to extend towards the sensor edge, which could lead to increased surface currents for narrow dicing edges. In order to map the electric field inside biased silicon sensors with high bulk resistivity, three diodes from ATLAS silicon strip sensor prototype wafers were studied with a monochromatic, micro-focused X-ray beam at the Diamond Light Source (Didcot, U.K.). For all devices under investigation, the electric field inside the diode was mapped and its dependence on the applied bias voltage was studied. SN - 1748-0221 UR - https://arxiv.org/abs/1809.02667 UR - https://doi.org/10.1088/1748-0221/14/03/P03024 DO - 10.1088/1748-0221/14/03/P03024 LA - English N1 - WOS:000463330900012 ID - Poley_etal2019 ER -