PT Journal
AU Hiti, B
   Cindro, V
   Gorisek, A
   Franks, M
   Marco-Hernandez, R
   Kramberger, G
   Mandic, I
   Mikuz, M
   Powell, S
   Steininger, H
   Vilella, E
   Zavrtanik, M
   Zhang, C
TI Characterisation of analogue front end and time walk in CMOS active pixel sensor
SO Journal of Instrumentation
JI J. Instrum.
PY 2021
BP P12020 - 12pp
VL 16
IS 12
DI 10.1088/1748-0221/16/12/P12020
LA English
DE Charge induction; Radiation-hard detectors; Solid state detectors
AB In this work we investigated a method to determine time walk in an active silicon pixel sensor prototype using Edge-TCT with infrared laser charge injection. Samples were investigated before and after neutron irradiation to 5 . 10(14) n(eq)/cm(2). Threshold, noise and calibration of the analogue front end were determined with external charge injection. A spatially sensitive measurement of collected charge and time walk was carried out with Edge-TCT, showing a uniform charge collection and output delay in pixel centre. On pixel edges charge sharing was observed due to finite beam width resulting in smaller signals and larger output delay. Time walk below 25 ns was observed for charge above 2000 e(-) at a threshold above the noise level. Time walk measurement with external charge injection yielded identical results.
ER