@Article{Studen_etal2010,
author="Studen, A.
and Burdette, D.
and Chesi, E.
and Cindro, V.
and Clinthorne, N. H.
and Cochran, E.
and Grosicar, B.
and Kagan, H.
and Lacasta, C.
and Linhart, V.
and Mikuz, M.
and Stankova, V.
and Weilhammer, P.
and Zontar, D.",
title="Timing performance of the silicon PET insert probe",
journal="Radiation Protection Dosimetry",
year="2010",
publisher="Oxford Univ Press",
volume="139",
number="1-3",
pages="199--203",
abstract="Simulation indicates that PET image could be improved by upgrading a conventional ring with a probe placed close to the imaged object. In this paper, timing issues related to a PET probe using high-resistivity silicon as a detector material are addressed. The final probe will consist of several (four to eight) 1-mm thick layers of silicon detectors, segmented into 1 x 1 mm(2) pads, each pad equivalent to an independent p + nn+ diode. A proper matching of events in silicon with events of the external ring can be achieved with a good timing resolution. To estimate the timing performance, measurements were performed on a simplified model probe, consisting of a single 1-mm thick detector with 256 square pads (1.4 mm side), coupled with two VATAGP7s, application-specific integrated circuits. The detector material and electronics are the same that will be used for the final probe. The model was exposed to 511 keV annihilation photons from an Na-22 source, and a scintillator (LYSO)-PMT assembly was used as a timing reference. Results were compared with the simulation, consisting of four parts: (i) GEANT4 implemented realistic tracking of electrons excited by annihilation photon interactions in silicon, (ii) calculation of propagation of secondary ionisation (electron-hole pairs) in the sensor, (iii) estimation of the shape of the current pulse induced on surface electrodes and (iv) simulation of the first electronics stage. A very good agreement between the simulation and the measurements were found. Both indicate reliable performance of the final probe at timing windows down to 20 ns.",
optnote="ISI:000277738200035",
optnote="exported from refbase (https://references.ific.uv.es/refbase/show.php?record=449), last updated on Tue, 22 Mar 2011 11:15:20 +0000",
issn="0144-8420",
doi="10.1093/rpd/ncq076",
opturl="https://doi.org/10.1093/rpd/ncq076",
language="English"
}